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Parte # | Mfg. | Descripción | Valores | Precio |
---|---|---|---|---|
IPB09N03LA DISTI # IPB09N03LAINTR-ND | Infineon Technologies AG | MOSFET N-CH 25V 50A D2PAK RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
IPB09N03LAT DISTI # IPB09N03LAT-ND | Infineon Technologies AG | MOSFET N-CH 25V 50A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
IPB09N03LA G DISTI # IPB09N03LAG-ND | Infineon Technologies AG | MOSFET N-CH 25V 50A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
IPB09N03LAG DISTI # 726-IPB09N03LAG | Infineon Technologies AG | MOSFET N-Ch 25V 50A D2PAK-2 RoHS: Compliant | 0 | |
IPB09N03LA | Infineon Technologies AG | MOSFET Transistor, N-Channel, TO-263 | 8611 |
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Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: IPB090N06N3GATMA1 |
MOSFET N-CH 60V 50A TO263-3 | |
Mfr.#: IPB090N06N3GATMA1 , 2SD1 |
Nuevo y original | |
Mfr.#: IPB090N06N3GS OMO.#: OMO-IPB090N06N3GS-1190 |
Nuevo y original | |
Mfr.#: IPB093N04L G OMO.#: OMO-IPB093N04L-G-1190 |
Nuevo y original | |
Mfr.#: IPB096N03LG OMO.#: OMO-IPB096N03LG-1190 |
Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: IPB097N08N3 OMO.#: OMO-IPB097N08N3-1190 |
Nuevo y original | |
Mfr.#: IPB09N03 OMO.#: OMO-IPB09N03-1190 |
Nuevo y original | |
Mfr.#: IPB09N03LA/PSI OMO.#: OMO-IPB09N03LA-PSI-1190 |
Nuevo y original | |
Mfr.#: IPB09N03LAG OMO.#: OMO-IPB09N03LAG-1190 |
MOSFET N-Ch 25V 50A D2PAK-2 | |
Mfr.#: IPB09N03LAT |
MOSFET N-CH 25V 50A D2PAK |