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AUIRF7379QTR

AUIRF7379QTR
Mfr. #:
AUIRF7379QTR
Fabricante:
Infineon / IR
Descripción:
MOSFET AUTO 30V 1 N-CH HEXFET 45mOhms
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AUIRF7379QTR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AUIRF7379QTR DatasheetAUIRF7379QTR Datasheet (P4-P6)AUIRF7379QTR Datasheet (P7-P9)AUIRF7379QTR Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N, canal P
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
4.8 A
Rds On - Resistencia de la fuente de drenaje:
75 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
16.7 nC
Pd - Disipación de energía:
2.5 W
Configuración:
Doble
Calificación:
AEC-Q101
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Tipo de transistor:
1 N-Channel, 1 P-Channel
Ancho:
3.9 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
4000
Subcategoría:
MOSFET
Parte # Alias:
SP001520160
Unidad de peso:
0.019048 oz
Tags
AUIRF7379QT, AUIRF7379Q, AUIRF737, AUIRF73, AUIRF7, AUIRF, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
Automotive Q101 30V Dual N and P-Channel HEXFET Power MOSFET in a SO-8 Package, SO8, RoHS
***ical
Trans MOSFET N/P-CH 30V 4.8A/4.3A 8-Pin SOIC N Tube
***ment14 APAC
MOSFET, NP CH, 30V, 4.8/4.3A, SO8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, N Channel:5.8A; Continuous Drain Current Id, P Channel:-4.3A; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.038ohm; On Resistance Rds(on), P Channel:0.070ohm; Power Dissipation Pd:2.5W
***ineon
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***(Formerly Allied Electronics)
IRF7303PBF Dual N-channel MOSFET Transistor, 4.9 A, 30 V, 8-Pin SOIC | Infineon IRF7303PBF
***eco
Transistor MOSFET Negative Channel 30 Volt 4.9A 8-Pin SOIC T/R
***ure Electronics
Dual N-Channel 30 V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC Tube
***fin
Transistor NPN Mos IRF7303/IRF7303PBF INTERNATIONAL RECTIFIER RoHS V=30 SO8
***roFlash
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Po
***ark
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:4.9A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7303TRPBF.
***Yang
Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel
***emi
Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 5.5A, 38mΩ
***enic
30V 5.5A 38m´Î@10V5.5A 2W 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintainsuperior switching performance.These devices are well suited for low voltage andbattery powered applications where low in-line powerloss and fast switching are required.
***Yang
Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel
***emi
Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 5.5A, 40mΩ
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.5A; On Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, N, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 5.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 20A; SMD Marking: FDS6930A; Termination Type: Surface Mount Device; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.5V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V
***ical
Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC N T/R
***ark
Dual N/p Channel Mosfet, 30V, Soic, Full Reel; Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.035Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
***rchild Semiconductor
These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.
***ure Electronics
Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8
***nsix Microsemi
Small Signal Field-Effect Transistor, 5.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, DUAL, NP, 30V, SO-8; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.4A; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Power Dissipation Pd:1.25W; Power Dissipation Pd:2.1W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descripción Valores Precio
AUIRF7379QTR
DISTI # AUIRF7379QTR-ND		Infineon Technologies AGMOSFET N/P-CH 30V 5.8A 8SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.7609
AUIRF7379QTR
DISTI # AUIRF7379QTR		Infineon Technologies AGTrans MOSFET N/P-CH 30V 4.8A/4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: AUIRF7379QTR)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.7379
  • 8000:$0.7109
  • 16000:$0.6849
  • 24000:$0.6619
  • 40000:$0.6509
AUIRF7379QTR
DISTI # SP001520160		Infineon Technologies AGTrans MOSFET N/P-CH 30V 4.8A/4.3A 8-Pin SOIC N T/R (Alt: SP001520160)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.9559
  • 8000:€0.7819
  • 16000:€0.7169
  • 24000:€0.6619
  • 40000:€0.6149
AUIRF7379QTR
DISTI # 942-AUIRF7379QTR		Infineon Technologies AGMOSFET AUTO 30V 1 N-CH HEXFET 45mOhms
RoHS: Compliant		3621
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0200
  • 500:$0.8940
  • 1000:$0.7050
  • 4000:$0.6260
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Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de AUIRF7379QTR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,55 US$
1,55 US$
10
1,32 US$
13,20 US$
100
1,02 US$
102,00 US$
500
0,89 US$
447,00 US$
1000
0,70 US$
705,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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