OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

TGF3015-SM

TGF3015-SM
Mfr. #:
TGF3015-SM
Fabricante:
Qorvo
Descripción:
RF JFET Transistors .03-3GHz Gain 17dB P3dB [email protected] GaN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TGF3015-SM Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
TGF3015-SM más información
Atributo del producto
Valor de atributo
Fabricante:
Qorvo
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
HEMT
Tecnología:
GaN SiC
Ganar:
17.1 dB
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
32 V
Vgs - Voltaje de ruptura de puerta-fuente:
- 2.7 V
Id - Corriente de drenaje continua:
557 mA
Potencia de salida:
11 W
Pd - Disipación de energía:
15.3 W
Estilo de montaje:
SMD / SMT
Paquete / Caja:
QFN-EP-16
Embalaje:
Bandeja
Configuración:
Único
Frecuencia de operación:
0.03 GHz to 3 GHz
Marca:
Qorvo
Kit de desarrollo:
TGF3015-SM-EVB1
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
100
Subcategoría:
Transistores
Parte # Alias:
1120419
Tags
TGF30, TGF3, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0.03- 3 GHz, 10 W, 17.1 dB, 32 V, GaN, Plastic
TGF3015-SM GaN HEMT
Qorvo TGF3015-SM is a 10W (P3dB), 50ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3x3mm package that saves real estate of already space-constrained handheld radios.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
TGF3015-SM
DISTI # 772-TGF3015-SM		QorvoRF JFET Transistors .03-3GHz Gain 17dB P3dB [email protected] GaN
RoHS: Compliant		156
  • 1:$58.0000
  • 25:$51.0000
  • 100:$45.0000
TGF3015-SM-EVB
DISTI # 772-TGF3015-SM-EVB		QorvoRF Development Tools
RoHS: Compliant		0
  • 1:$875.0000
Imagen Parte # Descripción
5CEBA4U15I7N

Mfr.#: 5CEBA4U15I7N

OMO.#: OMO-5CEBA4U15I7N

 FPGA - Field Programmable Gate Array FPGA - Cyclone V E 1848 LABS 176 IOs
LM27761DSGR

Mfr.#: LM27761DSGR

OMO.#: OMO-LM27761DSGR

 Switching Voltage Regulators Switch Cap Boost
LM5010AQ0MH/NOPB

Mfr.#: LM5010AQ0MH/NOPB

OMO.#: OMO-LM5010AQ0MH-NOPB

 Switching Voltage Regulators Hi Vltg 1A Step Down Switching Reg
S761K

Mfr.#: S761K

OMO.#: OMO-S761K

 DC Power Connectors DC PWR PLG 0.080" 1.8"L, BLK HAND. LCK
S761K

Mfr.#: S761K

OMO.#: OMO-S761K-SWITCHCRAFT-CONXALL

 DC Power Connectors DC PWR PLG 0.080" 1.8"L, BLK HAND. LCK
A-1JB

Mfr.#: A-1JB

OMO.#: OMO-A-1JB-AMPHENOL-RF

 RF Connectors / Coaxial Connectors AMC PCB JACK S/M T&R U.FL Compatible
5CEBA4U15I7N

Mfr.#: 5CEBA4U15I7N

OMO.#: OMO-5CEBA4U15I7N-INTEL

 IC FPGA 176 I/O 324UBGA Cyclone V E
PHP00603E4990BST1

Mfr.#: PHP00603E4990BST1

OMO.#: OMO-PHP00603E4990BST1-VISHAY

 Thin Film Resistors - SMD .375watt 499ohm .1% 25PPM
TXB0104QRUTRQ1

Mfr.#: TXB0104QRUTRQ1

OMO.#: OMO-TXB0104QRUTRQ1-TEXAS-INSTRUMENTS

 Translation - Voltage Levels Auto catalog 4Bit Bidirect V-Levl Tran
PCAN0603E1001BST5

Mfr.#: PCAN0603E1001BST5

OMO.#: OMO-PCAN0603E1001BST5-VISHAY

 RES SMD 1K OHM 0.1% 1/2W 0603
Disponibilidad
Valores:
156
En orden:
2139
Ingrese la cantidad:
El precio actual de TGF3015-SM es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
58,00 US$
58,00 US$
25
51,00 US$
1 275,00 US$
100
45,00 US$
4 500,00 US$
250
41,00 US$
10 250,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Top