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NDS8936

NDS8936
Mfr. #:
NDS8936
Fabricante:
ON Semiconductor
Descripción:
MOSFET 2N-CH 30V 5.3A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NDS8936 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
FET: matrices
Serie
-
embalaje
Digi-ReelR
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
8-SO
Tipo FET
2 N-Channel (Dual)
Potencia máxima
900mW
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
720pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
5.3A
Rds-On-Max-Id-Vgs
35 mOhm @ 5.3A, 10V
Vgs-th-Max-Id
2.8V @ 250μA
Puerta-Carga-Qg-Vgs
30nC @ 10V
Tags
NDS8936, NDS893, NDS89, NDS8, NDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 5.3A 8-Pin SOIC T/R
***i-Key
MOSFET 2N-CH 30V 5.3A 8-SOIC
***ser
MOSFETs Dual N-Ch FET Enhancement Mode
***inecomponents.com
RECOMMEND: FDS6912A
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.3A; On Resistance, Rds(on):0.035ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
***nell
MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:NN; Voltage, Vds Typ:30V; Current, Id Cont:6.7A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:15A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation:2W; Power, Pd:2W; Row Pitch:6.3mm; SMD Marking:NDS8936; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:2; Voltage, Vds Max:30V; Voltage, Vgs th N Channel 1 min:2.8V; Voltage, Vgs th N Channel 2 Min:2.8V; Width, External:4.05mm
***ment14 APAC
MOSFET, DUAL, NN, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:15A; Row Pitch:6.3mm; SMD Marking:NDS8936; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th N Channel 1 Min:2.8V; Voltage Vgs th N Channel 2 Min:2.8V
Parte # Mfg. Descripción Valores Precio
NDS8936
DISTI # NDS8936TR-ND		ON SemiconductorMOSFET 2N-CH 30V 5.3A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    NDS8936
    DISTI # NDS8936CT-ND    		ON SemiconductorMOSFET 2N-CH 30V 5.3A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      NDS8936
      DISTI # NDS8936DKR-ND      		ON SemiconductorMOSFET 2N-CH 30V 5.3A 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        NDS8936
        DISTI # 34C1626        		ON SemiconductorDUAL N CHANNEL MOSFET, 30V, 5.3A, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V, RoHS Compliant: Yes0
          NDS8936Fairchild Semiconductor CorporationPower Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		10943
          • 1000:$0.7900
          • 500:$0.8400
          • 100:$0.8700
          • 25:$0.9100
          • 1:$0.9800
          NDS8936
          DISTI # 512-NDS8936          		ON SemiconductorMOSFET Dual N-Ch FET Enhancement Mode
          RoHS: Compliant          		0
            NDS8936CTFairchild Semiconductor Corporation 35
              NDS8936Fairchild Semiconductor CorporationINSTOCK62431
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                Disponibilidad
                Valores:
                Available
                En orden:
                1500
                Ingrese la cantidad:
                El precio actual de NDS8936 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
                Precio de referencia (USD)
                Cantidad
                Precio unitario
                Ext. Precio
                1
                1,00 US$
                1,00 US$
                10
                0,95 US$
                9,49 US$
                100
                0,90 US$
                89,90 US$
                500
                0,85 US$
                424,50 US$
                1000
                0,80 US$
                799,10 US$
                Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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