S29GL01GS11DHA023

S29GL01GS11DHA023
Mfr. #:
S29GL01GS11DHA023
Fabricante:
Cypress Semiconductor
Descripción:
NOR Flash Ser NOR Flash Memory 20
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
S29GL01GS11DHA023 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
S29GL01GS11DHA023 más información S29GL01GS11DHA023 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor de ciprés
Categoria de producto:
NOR Flash
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
LEA-64
Serie:
S29GL01G/512/256/128S
Tamaño de la memoria:
1 Gbit
Tipo de tiempo:
Asincrónico
Voltaje de suministro - Min:
2.7 V
Voltaje de suministro - Máx:
3.6 V
Corriente de suministro - Máx .:
100 uA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Calificación:
AEC-Q100
Embalaje:
Carrete
Tipo de memoria:
NI
Velocidad:
110 ns
Marca:
Semiconductor de ciprés
Tipo de producto:
NOR Flash
Cantidad de paquete de fábrica:
2200
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
MirrorBit Eclipse
Tags
S29GL01GS11DHA, S29GL01GS11D, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
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Mfr.#: S29GL01GS11FHV023

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Mfr.#: S29GL01GT13TFNV23

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Mfr.#: S29GL01GS11FHSS53

OMO.#: OMO-S29GL01GS11FHSS53-CYPRESS-SEMICONDUCTOR

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Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de S29GL01GS11DHA023 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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