DXTN3C100PSQ-13

DXTN3C100PSQ-13
Mfr. #:
DXTN3C100PSQ-13
Fabricante:
Diodes Incorporated
Descripción:
Bipolar Transistors - BJT 100V NPN Medium Pwr Low Sat Transistor
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DXTN3C100PSQ-13 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerDI5060-8
Polaridad del transistor:
NPN
Configuración:
Único
Voltaje colector-emisor VCEO Max:
100 V
Colector- Voltaje base VCBO:
100 V
Emisor- Voltaje base VEBO:
7 V
Voltaje de saturación colector-emisor:
225 mV
Corriente máxima del colector de CC:
3 A
Producto de ganancia de ancho de banda fT:
140 MHz
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Carrete
Marca:
Diodos incorporados
Corriente continua del colector:
3 A
Colector de CC / Ganancia base hfe Min:
10
Sensible a la humedad:
Yes
Pd - Disipación de energía:
5 W
Tipo de producto:
BJT - Transistores bipolares
Calificación:
AEC-Q101
Cantidad de paquete de fábrica:
2500
Subcategoría:
Transistores
Unidad de peso:
0.003422 oz
Tags
DXTN3, DXTN, DXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Imagen Parte # Descripción
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OMO.#: OMO-MJD3055T4G

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Mfr.#: MJD31CT4G

OMO.#: OMO-MJD31CT4G

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Mfr.#: BC847BPDW1T1G

OMO.#: OMO-BC847BPDW1T1G

Bipolar Transistors - BJT 100mA 50V Dual Complementary
MJD32CT4G

Mfr.#: MJD32CT4G

OMO.#: OMO-MJD32CT4G

Bipolar Transistors - BJT 3A 100V 15W PNP
MJD2955T4G

Mfr.#: MJD2955T4G

OMO.#: OMO-MJD2955T4G

Bipolar Transistors - BJT 10A 60V 20W PNP
BZX384-B68,115

Mfr.#: BZX384-B68,115

OMO.#: OMO-BZX384-B68-115

Zener Diodes DIODE ZENER 2 PCT
BZX384-B68,115

Mfr.#: BZX384-B68,115

OMO.#: OMO-BZX384-B68-115-NEXPERIA

Zener Diodes DIODE ZENER 2 PCT
BC847BPDW1T1G

Mfr.#: BC847BPDW1T1G

OMO.#: OMO-BC847BPDW1T1G-ON-SEMICONDUCTOR

Bipolar Transistors - BJT 100mA 50V Dual Complementary
MJD3055T4G

Mfr.#: MJD3055T4G

OMO.#: OMO-MJD3055T4G-ON-SEMICONDUCTOR

Bipolar Transistors - BJT 10A 60V 20W NPN
MJD2955T4G

Mfr.#: MJD2955T4G

OMO.#: OMO-MJD2955T4G-ON-SEMICONDUCTOR

Bipolar Transistors - BJT 10A 60V 20W PNP
Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de DXTN3C100PSQ-13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,61 US$
0,61 US$
10
0,51 US$
5,06 US$
100
0,31 US$
30,90 US$
1000
0,24 US$
239,00 US$
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