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BSC340N08NS3GATMA1

BSC340N08NS3GATMA1
Mfr. #:
BSC340N08NS3GATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC340N08NS3GATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PG-TDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
80 V
Id - Corriente de drenaje continua:
23 A
Rds On - Resistencia de la fuente de drenaje:
34 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
9.1 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
32 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
1.27 mm
Longitud:
5.9 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
5.15 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
8 S
Otoño:
2 ns
Tipo de producto:
MOSFET
Hora de levantarse:
3 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
11 ns
Tiempo típico de retardo de encendido:
8 ns
Parte # Alias:
BSC340N08NS3 BSC34N8NS3GXT G SP000447534
Unidad de peso:
0.007055 oz
Tags
BSC340N08NS3, BSC340N, BSC34, BSC3, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain
*** Source Electronics
Trans MOSFET N-CH 80V 7A Automotive 8-Pin TDSON EP T/R / MOSFET N-CH 80V 23A TDSON-8
***ure Electronics
N-Channel 80 V 34 mOhm OptiMOS™3 Power-Transistor - PG-TDSON-8
***nell
MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0275ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:32W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ure Electronics
Single N-Channel 80 V 29 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 80V 6.3A 8-Pin SOIC T/R
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:6.3A; On Resistance, Rds(on):29mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 24 Milliohms;ID 6.3A;SO-8;PD 2.5W;VGS +/-20V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:80V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.3A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Row Pitch:6.3mm; SMD Marking:F7488; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ser
MOSFETs 6a, 80V N-Ch MOSFET
***emi
N-Channel PowerTrench® MOSFET, 80V, 6.5A, 39mΩ
***Yang
Trans MOSFET N-CH 80V 6.5A 8-Pin SOIC N T/R - Tape and Reel
***ment14 APAC
N CHANNEL MOSFET, 80V, 6.5A, SOIC, FULL REEL; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:80V; On
***nell
MOSFET, N-CH, 80V, 6.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 60V; RDS(ON) 0.025Ohm; ID 25A; TO-252; PD 50W; VGS +/-20V; -55
***ure Electronics
Single N-Channel 60 V 0.031 Ohms Surface Mount Power Mosfet - TO-252
***nell
MOSFET, N-CH, 60V, 21.4A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 21.4A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 31.25W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***roFlash
Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ure Electronics
Single N-Channel 60 V 26 mOhm 21 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa
Parte # Mfg. Descripción Valores Precio
BSC340N08NS3GATMA1
DISTI # V72:2272_06390955		Infineon Technologies AGTrans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R
RoHS: Compliant		4900
  • 3000:$0.2249
  • 1000:$0.2526
  • 500:$0.3046
  • 250:$0.3079
  • 100:$0.3111
  • 25:$0.4366
  • 10:$0.4421
  • 1:$0.5109
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 23A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.2692
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 23A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 23A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC340N08NS3GATMA1
DISTI # 31314390		Infineon Technologies AGTrans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R
RoHS: Compliant		4900
  • 32:$0.5109
BSC340N08NS3GATMA1
DISTI # BSC340N08NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 7A 8-Pin TDSON EP - Tape and Reel (Alt: BSC340N08NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2079
  • 10000:$0.2009
  • 20000:$0.1939
  • 30000:$0.1869
  • 50000:$0.1839
BSC340N08NS3GATMA1/SAMPLE
DISTI # BSC340N08NS3GATMA1/SAMPLE		Infineon Technologies AGTrans MOSFET N-CH 80V 23A 8-Pin TDSON T/R - Bulk (Alt: BSC340N08NS3GATMA1/SAMPLE)
RoHS: Compliant
Container: Bulk		Americas - 0
    BSC340N08NS3GATMA1
    DISTI # 47W3313    		Infineon Technologies AGMOSFET, N CHANNEL, 80V, 23A, 8TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0275ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes2000
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 500:$0.3270
    • 1000:$0.2910
    BSC340N08NS3 G
    DISTI # 726-BSC340N08NS3G    		Infineon Technologies AGMOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
    RoHS: Compliant    		37972
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    BSC340N08NS3GATMA1
    DISTI # 726-BSC340N08NS3GATM    		Infineon Technologies AGMOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3
    RoHS: Compliant    		7422
    • 1:$0.6800
    • 10:$0.5620
    • 100:$0.3630
    • 1000:$0.2910
    BSC340N08NS3GATMA1
    DISTI # 7545320    		Infineon Technologies AGMOSFET N-CHANNEL 80V 7A OPTIMOS3 TDSON8, PK1415
    • 5:£0.4800
    • 50:£0.3720
    • 250:£0.2420
    • 1250:£0.1920
    • 2500:£0.1880
    BSC340N08NS3GATMA1
    DISTI # 2212853    		Infineon Technologies AGMOSFET, N-CH, 80V, 23A, 8TDSON
    RoHS: Compliant    		2000
    • 1:$1.0800
    • 10:$0.8900
    • 100:$0.5750
    • 1000:$0.4610
    • 5000:$0.3880
    BSC340N08NS3GATMA1
    DISTI # 2212853    		Infineon Technologies AGMOSFET, N-CH, 80V, 23A, 8TDSON
    RoHS: Compliant    		2000
    • 5:£0.4900
    • 25:£0.3790
    • 100:£0.2830
    • 250:£0.2470
    • 500:£0.2200
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    Disponibilidad
    Valores:
    Available
    En orden:
    1990
    Ingrese la cantidad:
    El precio actual de BSC340N08NS3GATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,67 US$
    0,67 US$
    10
    0,56 US$
    5,62 US$
    100
    0,36 US$
    36,30 US$
    1000
    0,29 US$
    291,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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