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SI4562DY-T1-E3

SI4562DY-T1-E3
Mfr. #:
SI4562DY-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4562DY-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4562DY-T1-E3 DatasheetSI4562DY-T1-E3 Datasheet (P4-P6)SI4562DY-T1-E3 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
SI4
Ancho:
3.9 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4562DY-E3
Unidad de peso:
0.006596 oz
Tags
SI4562D, SI4562, SI456, SI45, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N/P-CH 20V 7.1A/6.2A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:0.6V; Package/Case:8-SOIC; Termination Type:SMD ;RoHS Compliant: Yes
***ment14 APAC
DUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A; DUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A, SOIC-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:7.1A; Continuous Drain Current Id, P Channel:-6.2A; Drain Source Voltage Vds, N Channel:20V
***nell
MOSFET, NP, REEL 2500; Transistor Type:MOSFET; Transistor Polarity:NP; Voltage, Vds Typ:20V; Current, Id Cont:7.1A; Resistance, Rds On:0.035ohm; Voltage, Vgs Rds on Measurement:2.5V; Voltage, Vgs th Typ:1.6V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont P Channel:6.2A; Current, Idm Pulse:40A; N-channel Gate Charge:25nC; No. of Pins:8; P Channel Gate Charge:22nC; Power, Pd:2W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 2.5V N Channel:0.035ohm; Resistance, Rds on @ Vgs = 2.5V P Channel:0.050ohm; Resistance, Rds on @ Vgs = 4.5V N Channel:0.025ohm; Resistance, Rds on @ Vgs = 4.5V P Channel:0.033ohm; Resistance, Rds on P Channel Max:0.05ohm; SMD Marking:SI4562DY; Transistors, No. of:2; Voltage, Vds Max:20V; Voltage, Vds P Channel Max:20V; Width, Tape:12mm
Parte # Mfg. Descripción Valores Precio
SI4562DY-T1-E3
DISTI # SI4562DY-T1-E3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SI4562DY-T1-E3
    DISTI # SI4562DY-T1-E3CT-ND    		Vishay SiliconixMOSFET N/P-CH 20V 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI4562DY-T1-E3
      DISTI # SI4562DY-T1-E3DKR-ND      		Vishay SiliconixMOSFET N/P-CH 20V 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI4562DY-T1-E3
        DISTI # 71T8049        		Vishay IntertechnologiesDUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A, SOIC-8, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:7.1A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes0
          SI4562DY-T1-E3
          DISTI # 06J7807          		Vishay IntertechnologiesDUAL N/P CHANNEL MOSFET, 20V, 7.1A/-6.2A, SOIC-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:7.1A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:8Pins RoHS Compliant: Yes0
            SI4562DY-T1-E3
            DISTI # 781-SI4562DY-T1-E3            		Vishay IntertechnologiesMOSFET 20V 7.1/6.2A 2W
            RoHS: Compliant            		0
              SI4562DY-T1
              DISTI # 781-SI4562DY-TR              		Vishay IntertechnologiesMOSFET 20V 7.1/6.2A 2W
              RoHS: Not compliant              		0
                Imagen Parte # Descripción
                SI4562DY-T1-GE3

                Mfr.#: SI4562DY-T1-GE3

                OMO.#: OMO-SI4562DY-T1-GE3

                		 MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3
                SI4562DY-T1-E3

                Mfr.#: SI4562DY-T1-E3

                OMO.#: OMO-SI4562DY-T1-E3

                		 MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3
                SI4562DY-T1-E3

                Mfr.#: SI4562DY-T1-E3

                OMO.#: OMO-SI4562DY-T1-E3-VISHAY

                		 IGBT Transistors MOSFET 20V 7.1/6.2A 2W
                SI4562DY

                Mfr.#: SI4562DY

                OMO.#: OMO-SI4562DY-1190

                		 MOSFET 20V 7.1/6.2A 2W
                SI4562DY-T1-GE3

                Mfr.#: SI4562DY-T1-GE3

                OMO.#: OMO-SI4562DY-T1-GE3-VISHAY

                		 MOSFET N/P-CH 20V 8-SOIC
                Disponibilidad
                Valores:
                Available
                En orden:
                3000
                Ingrese la cantidad:
                El precio actual de SI4562DY-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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