OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

PD57030-E

PD57030-E
Mfr. #:
PD57030-E
Fabricante:
STMicroelectronics
Descripción:
RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PD57030-E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
PD57030-E más información PD57030-E Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Id - Corriente de drenaje continua:
4 A
Vds - Voltaje de ruptura de drenaje-fuente:
65 V
Ganar:
14 dB
Potencia de salida:
30 W
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerSO-10RF-Formed-4
Embalaje:
Tubo
Configuración:
Único
Altura:
3.5 mm
Longitud:
7.5 mm
Frecuencia de operación:
1 GHz
Serie:
PD57030-E
Escribe:
RF Power MOSFET
Ancho:
9.4 mm
Marca:
STMicroelectronics
Modo de canal:
Mejora
Sensible a la humedad:
Yes
Pd - Disipación de energía:
52.8 W
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
400
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
20 V
Unidad de peso:
0.105822 oz
Tags
PD57030, PD5703, PD570, PD57, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
Transistor MOSFET N-CH 65V 4A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ure Electronics
N-Channel 65 V Formed Leads Enhancement Mode Lateral Mosfet - POWERSO-10RF
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
30W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ical
Trans RF MOSFET N-CH 65V 5A 3-Pin PowerSO-10RF (Formed lead) Tube
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
TDK - CGA2B2X7R1H222K050BA - Keramikvielschichtkondensator, SMD, 2200 pF, 50 V, 0402 [Metrisch 1005], ± 10%, X7R, Baureihe CGA
***(Formerly Allied Electronics)
IRF7341PBF Dual N-channel MOSFET Transistor, 4.7 A, 55 V, 8-Pin SOIC | Infineon IRF7341PBF
***itex
Transistor: 2xN-MOSFET; unipolar; 55V; 4.7A; 0.05ohm; 2W; -55+150 deg.C; SMD; SO8
***ure Electronics
Dual N-Channel 55 V 0.065 Ohm 36 nC HEXFET® Power Mosfet - SOIC-8
***et Japan
Transistor MOSFET Array Dual N-CH 55V 4.7A 8-Pin SOIC T/R
***id Electronics
Transistor MOSFET 2xN-Ch. 55V 4,7A SO8 IRF 7341 TRPBF
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:4.7A; On Resistance Rds(On):0.043Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: Yes
***icontronic
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***eco
Transistor MOSFET N Channel 55 Volt 5.1 Amp 4 Pin 3+ Tab SOT-223
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
*** Source Electronics
Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 55V 5.1A SOT223
***ark
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor Fet, To-261Aa |Infineon IRFL024Z
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
***nell
MOSFET, N, 55V, 5.1A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.1A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0462ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***ark
MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous
***ure Electronics
ZXMP6A17G Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-223
***p One Stop Global
Trans MOSFET P-CH 60V 4.3A Automotive 4-Pin(3+Tab) SOT-223 T/R
***(Formerly Allied Electronics)
MOSFET P-Channel 60V 4.3A SOT223 | Diodes Inc ZXMP6A17GTA
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: P Variants: Enhancement mode Power dissipation: 2 W
***icontronic
Power Field-Effect Transistor, 3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***nell
MOSFET, P CH, W/DIO, 60V, 3A, SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.096ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2012)
***(Formerly Allied Electronics)
SI4100DY-T1-GE3 N-channel MOSFET Transistor; 6.8 A; 100 V; 8-Pin SOIC
***et
Trans MOSFET N-CH 100V 4.4A 8-Pin SOIC N T/R
***ure Electronics
Si4100DY Series 100 V 6.8 A 63 mOhm Surface Mount N-Channel MOSFET - SO-8
***nell
MOSFET, N-CH, 100V, 6.8A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.8A; Power Dissipation Pd:6W; Voltage Vgs Max:20V
Parte # Mfg. Descripción Valores Precio
PD57030-E
DISTI # V36:1790_06556204		STMicroelectronicsTrans RF MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		27
  • 100:$33.0900
  • 10:$37.6100
  • 1:$40.2400
PD57030-E
DISTI # 497-5307-5-ND		STMicroelectronicsFET RF 65V 945MHZ PWRSO10
RoHS: Compliant
Min Qty: 1
Container: Tube		344In Stock
  • 100:$35.3510
  • 50:$39.0080
  • 1:$43.6400
PD57030-E
DISTI # 25667260		STMicroelectronicsTrans RF MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		27
  • 10:$37.6100
  • 1:$40.2400
PD57030-E
DISTI # 24089305		STMicroelectronicsTrans RF MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		15
  • 2:$46.0000
PD57030-E
DISTI # PD57030-E		STMicroelectronicsTrans MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD57030-E)
RoHS: Compliant
Min Qty: 400
Container: Bag		Americas - 0
  • 400:$36.4900
  • 800:$34.7900
  • 1600:$33.1900
  • 2400:$31.6900
  • 4000:$31.0900
PD57030-ESTMicroelectronicsN-Channel 65 V Formed Leads Enhancement Mode Lateral Mosfet - POWERSO-10RF
RoHS: Compliant		190Box
  • 1:$41.6800
  • 2:$39.6000
  • 5:$37.0200
  • 10:$35.1800
  • 25:$31.2600
PD57030-E
DISTI # 511-PD57030-E		STMicroelectronicsRF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
RoHS: Compliant		74
  • 1:$43.6300
  • 2:$43.1500
  • 5:$42.6600
  • 10:$40.7100
  • 25:$38.5200
  • 50:$37.5800
  • 100:$35.3400
PD57030-E
DISTI # PD57030-E		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		15
  • 1:$41.8600
  • 10:$40.5100
  • 50:$39.2400
  • 100:$38.0500
  • 250:$35.3700
  • 500:$33.4900
  • 1000:$31.8000
PD57030-ESTMicroelectronics 209
    PD57030-E
    DISTI # C1S730200315405    		STMicroelectronicsTrans RF MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Formed lead) Tube
    RoHS: Compliant    		15
    • 5:$52.1000
    • 1:$65.8000
    Imagen Parte # Descripción
    TAT8888

    Mfr.#: TAT8888

    OMO.#: OMO-TAT8888

    		 RF Amplifier 50-1000MHz 24V Gain 24dB Pwr Dblr
    R2005350L

    Mfr.#: R2005350L

    OMO.#: OMO-R2005350L

    		 RF Amplifier 5-200MHz NF 5dB Gain 36dB
    TC4427ACOA

    Mfr.#: TC4427ACOA

    OMO.#: OMO-TC4427ACOA

    		 Gate Drivers 1.5A Dual td Match
    PMBT4403,235

    Mfr.#: PMBT4403,235

    OMO.#: OMO-PMBT4403-235

    		 Bipolar Transistors - BJT TRANS SW TAPE-11
    AFT05MS003NT1

    Mfr.#: AFT05MS003NT1

    OMO.#: OMO-AFT05MS003NT1

    		 RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
    CY8C24223A-24PVXIT

    Mfr.#: CY8C24223A-24PVXIT

    OMO.#: OMO-CY8C24223A-24PVXIT

    		 8-bit Microcontrollers - MCU 4K Flsh 256B RAM IND
    CY8C24223A-24PVXI

    Mfr.#: CY8C24223A-24PVXI

    OMO.#: OMO-CY8C24223A-24PVXI

    		 8-bit Microcontrollers - MCU IC MCU 4K FLASH 256B SRAM
    UC2843N

    Mfr.#: UC2843N

    OMO.#: OMO-UC2843N

    		 Switching Controllers Current Mode
    2867002402

    Mfr.#: 2867002402

    OMO.#: OMO-2867002402

    		 Ferrite Toroids / Ferrite Rings 67 Multi-Aperture 7x6.20x4.20MM
    AFT05MS003NT1

    Mfr.#: AFT05MS003NT1

    OMO.#: OMO-AFT05MS003NT1-NXP-SEMICONDUCTORS

    		 RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
    Disponibilidad
    Valores:
    65
    En orden:
    2048
    Ingrese la cantidad:
    El precio actual de PD57030-E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    43,63 US$
    43,63 US$
    2
    43,15 US$
    86,30 US$
    5
    42,66 US$
    213,30 US$
    10
    40,71 US$
    407,10 US$
    25
    38,52 US$
    963,00 US$
    50
    37,58 US$
    1 879,00 US$
    100
    35,34 US$
    3 534,00 US$
    250
    32,81 US$
    8 202,50 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    • MDmesh™ M6 Series 600 V Power MOSFETs
      MDmesh™ M6 Series 600 V Power MOSFETs
      STMicroelectronics’ MDmesh M6 series power MOSFETs in PowerFLAT 5 mm x 6 mm high voltage packages have reduced switching loss and low gate input resistance.
    • Compare PD57030-E
      Compare PD57030-E
      PD57030 vs PD57030E vs PD57030S
    • LDCL015 Series
      LDCL015 Series
      STMicroelectronics' LDCL015 series are ultra-low drop, capless linear regulators with low noise and low current consumption.
    • VNI8200XP Monolithic 8-Channel Driver
      VNI8200XP Monolithic 8-Channel Driver
      STMicroelectronics' monolithic octal driver IC has low supply current and integrated protection features that prevent against overload.
    • Ultra-Low Power Arm® Cortex®-M4 MCUs
      Ultra-Low Power Arm® Cortex®-M4 MCUs
      STMicroelectronics' ultra-low power Arm® Cortex®-M4 MCUs are available in low-pin-count-packages ranging from 32-pin LQFP to 64-pin BGA including 36-pin WLCSP.
    • LSM303C e-compass Accelerometer
      LSM303C e-compass Accelerometer
      STMicroelectronics' LSM303C accelerometers are tiny which helps to save board space. Used for advanced navigation and motion sensitive applications.
    More Newest Products
    Top