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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPB260N06N3GATMA1 DISTI # IPB260N06N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 27A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB260N06N3GATMA1 DISTI # IPB260N06N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 27A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB260N06N3GATMA1 DISTI # IPB260N06N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 27A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB260N06N3G | Infineon Technologies AG | Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1940 |
|
| IPB260N06N3 G DISTI # 726-IPB260N06N3G | Infineon Technologies AG | MOSFET N-Ch 200V 27A D2PAK-2 RoHS: Compliant | 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: IPB260N06N3 OMO.#: OMO-IPB260N06N3-1190 |
Nuevo y original |
|
|
Mfr.#: IPB260N06N3G OMO.#: OMO-IPB260N06N3G-1190 |
Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: IPB260N06N3GATMA1 |
MOSFET N-CH 60V 27A TO263-3 |
|
|
Mfr.#: IPB260N06N3 G OMO.#: OMO-IPB260N06N3-G-126 |
IGBT Transistors MOSFET N-Ch 200V 27A D2PAK-2 |