QPD1008L

QPD1008L
Mfr. #:
QPD1008L
Fabricante:
Qorvo
Descripción:
RF TRANSISTOR 125W 50V NI-360
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
QPD1008L Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
QPD1008L más información
Atributo del producto
Valor de atributo
Tags
QPD100, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Transistor, DC - 3.2 GHz, 125 W, 50 V, GaN, Eared NI-360
***hardson RFPD
RF POWER TRANSISTOR
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
QPD1008L
DISTI # QPD1008L-ND
RF Micro Devices IncRF TRANSISTOR 125W 50V NI-360
RoHS: Compliant
Container: Bulk
Limited Supply - Call
    QPD1008L
    DISTI # 772-QPD1008L
    QorvoRF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
    RoHS: Compliant
    43
    • 1:$200.0000
    • 25:$173.0000
    Imagen Parte # Descripción
    QPD1018

    Mfr.#: QPD1018

    OMO.#: OMO-QPD1018

    RF JFET Transistors 500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET
    QPD1016

    Mfr.#: QPD1016

    OMO.#: OMO-QPD1016

    RF JFET Transistors 500 Watt, 50 Volt, DC-1.7 GHz, GaN RF Transistor
    QPD1823

    Mfr.#: QPD1823

    OMO.#: OMO-QPD1823

    RF JFET Transistors 1.8-2.4GHz GaN 220W 48V
    QPD1881L

    Mfr.#: QPD1881L

    OMO.#: OMO-QPD1881L

    RF JFET Transistors 400 Watt, 50 Volt, 2.7-2.9 GHz, GaN RF Transistor
    QPD1025

    Mfr.#: QPD1025

    OMO.#: OMO-QPD1025

    RF MOSFET Transistors 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN
    QPD1003

    Mfr.#: QPD1003

    OMO.#: OMO-QPD1003-RFMD

    RF TRANSISTOR
    QPD1008

    Mfr.#: QPD1008

    OMO.#: OMO-QPD1008-1152

    RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN
    QPD1016

    Mfr.#: QPD1016

    OMO.#: OMO-QPD1016-1152

    RF JFET Transistors 3V GSM PAin MLP (Pb-Free)
    QPD1025L

    Mfr.#: QPD1025L

    OMO.#: OMO-QPD1025L-1152

    RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
    QPD1010-EVB1

    Mfr.#: QPD1010-EVB1

    OMO.#: OMO-QPD1010-EVB1-1152

    RF Development Tools DC-4GHz 10W 28-50V Eval Board
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de QPD1008L es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    259,50 US$
    259,50 US$
    10
    246,52 US$
    2 465,25 US$
    100
    233,55 US$
    23 355,00 US$
    500
    220,58 US$
    110 287,50 US$
    1000
    207,60 US$
    207 600,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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