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IRF6775MTR1PBF

IRF6775MTR1PBF
Mfr. #:
IRF6775MTR1PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 150V N-CH 8A 47mOhm for Digital Audio
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF6775MTR1PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6775MTR1PBF DatasheetIRF6775MTR1PBF Datasheet (P4-P6)IRF6775MTR1PBF Datasheet (P7-P9)IRF6775MTR1PBF Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DirectFET-MZ
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
150 V
Id - Corriente de drenaje continua:
28 A
Rds On - Resistencia de la fuente de drenaje:
47 mOhms
Vgs th - Voltaje umbral puerta-fuente:
5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
25 nC
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
89 W
Configuración:
Único
Embalaje:
Carrete
Altura:
0.7 mm
Longitud:
6.35 mm
Tipo de transistor:
1 N-Channel
Ancho:
5.05 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
11 S
Otoño:
15 ns
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Hora de levantarse:
7.8 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001551188
Unidad de peso:
0.017637 oz
Tags
IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N-Ch, VDSS 150V, RDS(ON) 47 mOhm, ID 28A, DirectFET
***ment14 APAC
MOSFET, N, DIRECTFET MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:150V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.9A; Package / Case:MZ; Power Dissipation Pd:89W; Pulse Current Idm:39A; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:3V
***ernational Rectifier
A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 28 amperes optimized with low on resistance for applications such as Class D Audio Amplifier. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in pa
***(Formerly Allied Electronics)
IRFR4615PBF N-channel MOSFET Transistor; 33 A; 150 V; 3-Pin DPAK
***ure Electronics
Single N-Channel 150 V 42 mOhm 26 nC HEXFET® Power Mosfet - DPAK
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
*** Source Electronics
Trans MOSFET N-CH 150V 33A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 150V 33A DPAK
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH 150V 33A DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dis
***ineon SCT
Digital Audio 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 150V 42 mOhm 40 nC HEXFET® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 150V 33A 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N-CH, 150V, 33A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0345ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; P
***emi
N-Channel Power Trench® MOSFET, 150V, 29A, 54mΩ
***ure Electronics
N-Channel 150 V 54 mOhm Surface Mount PowerTrench Mosfet TO-252AA
***r Electronics
Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ment14 APAC
MOSFET, N, SMD, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:135W; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:29A; Package / Case:TO-252AA; Power Dissipation Pd:135W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel PowerTrench® MOSFET 150V, 21A, 66mΩ
***ure Electronics
N-Channel 150 V 66 mOhm Surface Mount PowerTrench Mosfet - TO-252AA
***nell
MOSFET, N CH, 150V, 21A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
***r Electronics
Power Field-Effect Transistor, 3.7A I(D), 150V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***(Formerly Allied Electronics)
SUD25N15-52-E3 N-channel MOSFET Transistor; 25 A; 150 V; 3-Pin TO-252
***ure Electronics
Single N-Channel 150 V 0.052 Ohms Surface Mount Power Mosfet - TO-252
*** Source Electronics
MOSFET N-CH 150V 25A TO252 / Trans MOSFET N-CH 150V 25A 3-Pin(2+Tab) DPAK
***ment14 APAC
MOSFET, N CH, 150V, 25A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:150V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:100W; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:25A; Package / Case:TO-252; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descripción Valores Precio
IRF6775MTR1PBF
DISTI # IRF6775MTR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 150V 4.9A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6775MTR1PBF
    DISTI # IRF6775MTR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 150V 4.9A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6775MTR1PBF
      DISTI # IRF6775MTR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 150V 4.9A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6775MTR1PBF
        DISTI # 70018868        		Infineon Technologies AGMOSFET,N-Ch,VDSS 150V,RDS(ON) 47 mOhm,ID 28A,DirectFET
        RoHS: Compliant        		0
        • 1000:$1.8000
        • 2000:$1.6300
        IRF6775MTR1PBF
        DISTI # 942-IRF6775MTR1PBF        		Infineon Technologies AGMOSFET 150V N-CH 8A 47mOhm for Digital Audio
        RoHS: Compliant        		0
          IRF6775MTR1PBFInternational Rectifier 
          RoHS: Compliant          		Europe - 1000
            IRF6775MTR1PBF
            DISTI # 1602267            		Infineon Technologies AGMOSFET, N, DIRECTFET MZ
            RoHS: Compliant            		0
            • 1:$4.6100
            • 10:$3.7900
            • 100:$3.0700
            • 500:$2.7400
            • 1000:$2.4300
            • 2000:$2.2600
            • 5000:$2.1900
            • 10000:$2.0500
            Imagen Parte # Descripción
            IRF6775MTRPBF

            Mfr.#: IRF6775MTRPBF

            OMO.#: OMO-IRF6775MTRPBF

            		 MOSFET 150V 1 x N-CH HEXFET for Digital Audio
            IRF6775MTR1PBF

            Mfr.#: IRF6775MTR1PBF

            OMO.#: OMO-IRF6775MTR1PBF

            		 MOSFET 150V N-CH 8A 47mOhm for Digital Audio
            IRF6775MTR1PBF

            Mfr.#: IRF6775MTR1PBF

            OMO.#: OMO-IRF6775MTR1PBF-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 150V 4.9A DIRECTFET
            IRF6775MTRPBF

            Mfr.#: IRF6775MTRPBF

            OMO.#: OMO-IRF6775MTRPBF-INFINEON-TECHNOLOGIES

            		 RF Bipolar Transistors MOSFET 150V 1 x N-CH HEXFET for Digital Audio
            Disponibilidad
            Valores:
            Available
            En orden:
            2500
            Ingrese la cantidad:
            El precio actual de IRF6775MTR1PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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