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FDMD84100

FDMD84100
Mfr. #:
FDMD84100
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET FET 100V 20.0 MOHM PQFN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMD84100 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDMD84100 más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
Power-33x5-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
21 A
Rds On - Resistencia de la fuente de drenaje:
32 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
11 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
23 W
Configuración:
Doble
Nombre comercial:
PowerTrench Power Clip
Embalaje:
Carrete
Altura:
0.8 mm
Longitud:
5 mm
Serie:
FDMD84100
Tipo de transistor:
2 N-Channel
Ancho:
3.3 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
2.8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
2.6 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
14 ns
Tiempo típico de retardo de encendido:
8.4 ns
Unidad de peso:
0.005411 oz
Tags
FDMD84, FDMD, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Transistor MOSFET Array Dual N-CH 100V 21A 8-Pin PQFN T/R
***r Electronics
Power Field-Effect Transistor, 7A I(D), 100V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229
***rchild Semiconductor
This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density.
***ure Electronics
Single N-Channel 100 V 35 mOhm 20 nC HEXFET® Power Mosfet - DirectFET®
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:4.5A; On Resistance, Rds(on):35mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET SJ ;RoHS Compliant: Yes
***ineon
Target Applications: AC-DC; Battery Operated Drive; Class D Audio; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
***ernational Rectifier
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SJ package rated at 25 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N-CH, 100V, 25A, DIRECTFET SJ; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 42W; Transistor Case Style: DirectFET SJ; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ark
MOSFET Transistor, N Channel, 23 A, 100 V, 60 mohm, 10 V, 3 V RoHS Compliant: Yes
***icroelectronics
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
*** Source Electronics
Trans MOSFET N-CH 100V 23A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 23A DPAK
***va Crawler
N-channel 100 V, 0.06 Ohm typ., 23 A StripFET II Power MOSFET in a DPAK package
***ure Electronics
N-Channel 100 V 0.065 Ohm Surface Mount STripFET™ II Power MosFet - TO-252-3
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Source Voltage Vds:100V; On Resistance Rds(on):0.065ohm; Rds(on)
***r Electronics
Power Field-Effect Transistor, 15A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 23A; On State resistance @ Vgs = 10V: 65mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET F7 Power MOSFET in DPAK package
***ure Electronics
N-Channel 100 V 0.035 Ohm Surface Mount Power Mosfet - DPAK-3
*** Source Electronics
Trans MOSFET N-CH 100V 25A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 25A DPAK
***ment14 APAC
MOSFET, N-CH, 100V, 25A, 40W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 25A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 100V, 25A, 40W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 40W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET VII DeepGATE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
N-Channel Logic Level Power MOSFET 100V, 25A, 50mΩ Automotive Power MOSFET 100V Logic Level
***ical
Trans MOSFET N-CH 100V 25A Automotive 3-Pin(2+Tab) DPAK T/R
***ark
Nfet Dpak 100V 23A 56Mohm / Reel
***r Electronics
Power Field-Effect Transistor, 25A I(D), 100V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
RES SMD 19.6K OHM 1% 1/16W 0402
***icroelectronics
N-CHANNEL 100V - 0.038 OHM - 30A DPAK LOW GATE CHARGE STRIPFET II MOSFET
***va Crawler
N-channel 100 V, 0.038 Ohm typ., 25 A STripFET II Power MOSFET in a DPAK package
***r Electronics
Power Field-Effect Transistor, 25A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***i-Key
MOSFET N-CH 100V 22A D2PAK
***ser
MOSFETs 22a, 100V, N-Ch UltraFET
FDMD84100 Dual N-Channel PowerTrench MOSFET
ON Semiconductor FDMD84100 Dual N-Channel PowerTrench MOSFET integrates two N-Channel devices connected internally in common-source configuration. This enables a very low package parasitics and an optimized thermal path to the common source pad on the bottom. The FDMD84100 Dual N-Channel PowerTrench MOSFET provides a very small footprint (3.3 x 5 mm) for higher power density.Learn More
Parte # Mfg. Descripción Valores Precio
FDMD84100
DISTI # V36:1790_06337941		ON SemiconductorPT5 100/20V SYMMETRICAL DUAL C0
    FDMD84100
    DISTI # FDMD84100TR-ND    		ON SemiconductorMOSFET 2N-CH 100V 7A 8-PQFN
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		3000In Stock
    • 3000:$1.4000
    FDMD84100
    DISTI # FDMD84100CT-ND    		ON SemiconductorMOSFET 2N-CH 100V 7A 8-PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		3000In Stock
    • 1000:$1.5141
    • 500:$1.7953
    • 100:$2.1089
    • 10:$2.5740
    • 1:$2.8700
    FDMD84100
    DISTI # FDMD84100DKR-ND    		ON SemiconductorMOSFET 2N-CH 100V 7A 8-PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		3000In Stock
    • 1000:$1.5141
    • 500:$1.7953
    • 100:$2.1089
    • 10:$2.5740
    • 1:$2.8700
    FDMD84100
    DISTI # FDMD84100    		ON SemiconductorTrans MOSFET N-CH 100V 21A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD84100)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 6000:$1.1900
    • 12000:$1.1900
    • 18000:$1.1900
    • 30000:$1.1900
    • 3000:$1.2900
    FDMD84100
    DISTI # 512-FDMD84100    		ON SemiconductorMOSFET FET 100V 20.0 MOHM PQFN
    RoHS: Compliant    		2345
    • 1:$2.6400
    • 10:$2.2500
    • 100:$1.9500
    • 250:$1.8500
    • 500:$1.6600
    • 1000:$1.4000
    • 3000:$1.3300
    • 6000:$1.2800
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    OMO.#: OMO-LMP2021MF-NOPB-TEXAS-INSTRUMENTS

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    Disponibilidad
    Valores:
    233
    En orden:
    2216
    Ingrese la cantidad:
    El precio actual de FDMD84100 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,64 US$
    2,64 US$
    10
    2,25 US$
    22,50 US$
    100
    1,95 US$
    195,00 US$
    250
    1,85 US$
    462,50 US$
    500
    1,66 US$
    830,00 US$
    1000
    1,40 US$
    1 400,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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