GS8161E36DGD-400

GS8161E36DGD-400
Mfr. #:
GS8161E36DGD-400
Fabricante:
GSI Technology
Descripción:
SRAM 2.5 or 3.3V 512K x 36 18M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS8161E36DGD-400 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS8161E36DGD-400 más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
18 Mbit
Organización:
512 k x 36
Tiempo de acceso:
4 ns
Frecuencia máxima de reloj:
400 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.3 V
Corriente de suministro - Máx .:
280 mA, 365 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-165
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS8161E36DGD
Escribe:
Tubería DCD / Flujo continuo
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
36
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
SyncBurst
Tags
GS8161E36DGD, GS8161E36DG, GS8161E36, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 36 4ns/2.5ns 165-Pin FBGA
***ical
SRAM Chip Sync Dual 1.8V 18M-bit 1M x 18 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1312 Tray ic memory 250MHz 450ps 15mm 560mA
***ponent Stockers USA
1M X 18 QDR SRAM 0.45 ns PBGA165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***pmh
DS1245 3.3V 1024K NONVOLATILE SR
***ure Electronics
CY7C1412KV18 Series 1.9V 18 Mb (1 M x 18) 250 MHz Surface Mount SRAM - FBGA-165
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e1 Surface Mount CY7C1312 Tray ic memory 250MHz 450ps 15mm 560mA
*** Stop Electro
QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165
***ponent Stockers USA
1M X 18 QDR SRAM 0.45 ns PBGA165
***ress Semiconductor SCT
Synchronous SRAM, BGA-165, RoHS
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 9-Bit 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1911 Tray ic memory 250MHz 450ps 15mm 430mA
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
QDR SRAM, 2MX9, 0.45NS, CMOS, PB
***ical
SRAM Chip Sync Dual 1.8V 18M-bit 1M x 18 0.45ns 165-Pin LFBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***ark
18Mb, Quad (Burst Of 2), Sync Sram, 1M X 18, 165 Ball Fbga (13X15 Mm), Rohs |Integrated Silicon Solution (Issi) IS61QDB21M18A-250B4LI
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 165-Pin FBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***ark
18Mb, Quad (Burst Of 2), Sync Sram, 1M X 18, 165 Ball Fbga (15X17 Mm), Rohs |Integrated Silicon Solution (Issi) IS61QDB21M18A-250M3L
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Imagen Parte # Descripción
GS8161E36DGT-333I

Mfr.#: GS8161E36DGT-333I

OMO.#: OMO-GS8161E36DGT-333I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DD-200

Mfr.#: GS8161E36DD-200

OMO.#: OMO-GS8161E36DD-200

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGD-150

Mfr.#: GS8161E36DGD-150

OMO.#: OMO-GS8161E36DGD-150

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E32DGD-200I

Mfr.#: GS8161E32DGD-200I

OMO.#: OMO-GS8161E32DGD-200I

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGT-200V

Mfr.#: GS8161E32DGT-200V

OMO.#: OMO-GS8161E32DGT-200V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DGT-250V

Mfr.#: GS8161E32DGT-250V

OMO.#: OMO-GS8161E32DGT-250V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DGD-150IV

Mfr.#: GS8161E36DGD-150IV

OMO.#: OMO-GS8161E36DGD-150IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161E32DD-250IV

Mfr.#: GS8161E32DD-250IV

OMO.#: OMO-GS8161E32DD-250IV

SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DGT-400

Mfr.#: GS8161E32DGT-400

OMO.#: OMO-GS8161E32DGT-400

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E36DD-400

Mfr.#: GS8161E36DD-400

OMO.#: OMO-GS8161E36DD-400

SRAM 2.5 or 3.3V 512K x 36 18M
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de GS8161E36DGD-400 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
36
24,14 US$
869,04 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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