NDBA180N10BT4H

NDBA180N10BT4H
Mfr. #:
NDBA180N10BT4H
Fabricante:
ON Semiconductor
Descripción:
MOSFET NCH 180A 100V TO-263
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NDBA180N10BT4H Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
180 A
Rds On - Resistencia de la fuente de drenaje:
2.3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
95 nC
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
200 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
EN Semiconductor
Transconductancia directa - Mín .:
150 S
Otoño:
130 ns
Tipo de producto:
MOSFET
Hora de levantarse:
320 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
185 ns
Tiempo típico de retardo de encendido:
95 ns
Unidad de peso:
0.077603 oz
Tags
NDBA1, NDBA, NDB
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
***emi
Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel
***r Electronics
Power Field-Effect Transistor, 100A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***(Formerly Allied Electronics)
IRFS7730PBF N-channel MOSFET Transistor; 246 A; 75 V; 3-Pin D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 75 V 2.6 mOhm 271 nC HEXFET® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 75V 246A 3-Pin(2+Tab) D2PAK Tube
***nell
MOSFET, N-CH, 75V, 195A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 246A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
***ineon
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
***icroelectronics
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
***ical
Trans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
***nell
MOSFET, N CH, 100V, 180A, H2PAK-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V
***(Formerly Allied Electronics)
IRFS7734PBF N-channel MOSFET Transistor; 183 A; 75 V; 3-Pin D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***roFlash
Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 75V 183A 3-Pin D2PAK T/R - Tape and Reel
***ark
TUBE / MOSFET, 75V, 183A, 3.5 Ohm, 180 nC, D2PAK
***nell
MOSFET, N-CH, 75V, 183A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 183A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 290 W
*** Stop Electro
Power Field-Effect Transistor, 183A I(D), 75V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
***icroelectronics
N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package
***et
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R
***ponent Stockers USA
180 A 100 V 0.004 ohm N-CHANNEL Si POWER MOSFET
***ark
MOSFET, N CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 180A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ow.cn
STH180N10F3-2 STMicroelectronics Transistors MOSFETs N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R - Arrow.com
***icroelectronics SCT
Power MOSFETs, 100V, 180A, H2PAK-2, Tape and Reel
***ineon SCT
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 100V 130A Automotive 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 100V 130A HEXFET D2PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET,N CH,100V,75A,D2PAK; Continuous Drain Current Id:130A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Automotive 48V Energy Mgmt; Automotive 48V DC-DC; Automotive 48V Motor Drive; Brushed Motor Drive; Brushless Motor Drive; Exhaust; HV DC-DC Converter
***icroelectronics
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package
***ure Electronics
N-Channel 100 V 2.5 mOhm 300 W STripFET™ F7 Power Mosfet-H2PAK-2
***p One Stop
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R
***r Electronics
Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***icroelectronics SCT
Power MOSFETs, 100V, 180A, H2PAK-2, Tape and Reel
***el Electronic
Buffers & Line Drivers OCTAL BUFFER 3-STATE
Parte # Mfg. Descripción Valores Precio
NDBA180N10BT4H
DISTI # NDBA180N10BT4H-ND
ON SemiconductorMOSFET N-CH 100V 180A DPAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Limited Supply - Call
    NDBA180N10BT4HON Semiconductor 
    RoHS: Not Compliant
    22990
    • 1000:$1.9200
    • 500:$2.0200
    • 100:$2.1100
    • 25:$2.2000
    • 1:$2.3600
    NDBA180N10BT4H
    DISTI # 863-NDBA180N10BT4H
    ON SemiconductorMOSFET NCH 180A 100V TO-263
    RoHS: Compliant
    0
      NDBA180N10BT4HON Semiconductor 529
        NDBA180N10BT4HON Semiconductor100V,2.8m,180A,N-Channel Power MOSFET500
        • 1:$3.1300
        • 100:$2.3500
        • 500:$2.0100
        • 1000:$1.8800
        Imagen Parte # Descripción
        NDBA180N10BT4H

        Mfr.#: NDBA180N10BT4H

        OMO.#: OMO-NDBA180N10BT4H

        MOSFET NCH 180A 100V TO-263
        NDBA180N10B

        Mfr.#: NDBA180N10B

        OMO.#: OMO-NDBA180N10B-1190

        Nuevo y original
        NDBA180N10BT4H

        Mfr.#: NDBA180N10BT4H

        OMO.#: OMO-NDBA180N10BT4H-ON-SEMICONDUCTOR

        MOSFET N-CH 100V 180A DPAK
        Disponibilidad
        Valores:
        Available
        En orden:
        1500
        Ingrese la cantidad:
        El precio actual de NDBA180N10BT4H es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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