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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SQ2319ES-T1-GE3 DISTI # SQ2319ES-T1-GE3CT-ND | Vishay Siliconix | MOSFET P-CH 40V 4.6A TO-236 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SQ2319ES-T1-GE3 DISTI # SQ2319ES-T1-GE3DKR-ND | Vishay Siliconix | MOSFET P-CH 40V 4.6A TO-236 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SQ2319ES-T1-GE3 DISTI # 37T8273 | Vishay Intertechnologies | MOSFET,P CHANNEL,W DIODE,40V,4.6A,SOT-23,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.6A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.061ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2V RoHS Compliant: Yes | 0 | |
| SQ2319ES-T1-GE3 DISTI # 70459599 | Vishay Siliconix | 40V 4.6A 3W P-Ch Automotive RoHS: Compliant | 0 |
|
| SQ2319ES-T1-GE3 DISTI # 78-SQ2319ES-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SQ2389ES-T1_GE3 RoHS: Compliant | 0 | |
| SQ2319EST1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 3.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant | 327 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: SQ2319ES OMO.#: OMO-SQ2319ES-1190 |
Nuevo y original |
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Mfr.#: SQ2319ES-T1 OMO.#: OMO-SQ2319ES-T1-1190 |
Nuevo y original |
|
Mfr.#: SQ2319ES-T1-GE3 OMO.#: OMO-SQ2319ES-T1-GE3-VISHAY |
MOSFET P-CH 40V 4.6A TO-236 |
|
|
Mfr.#: SQ2319EST1GE3 OMO.#: OMO-SQ2319EST1GE3-1190 |
Power Field-Effect Transistor, 3.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 |