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SIS330DN-T1-GE3

SIS330DN-T1-GE3
Mfr. #:
SIS330DN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 78-SISA14DN-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIS330DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-1212-8
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Altura:
1.04 mm
Longitud:
3.3 mm
Serie:
SIS
Ancho:
3.3 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SIS330DN-GE3
Unidad de peso:
0.017637 oz
Tags
SIS330D, SIS330, SIS33, SIS3, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIS330DN-T1-GE3 N-channel MOSFET Transistor; 19 A; 30 V; 8-Pin PowePAK 1212
***et
Trans MOSFET N-CH 30V 19.1A 8-Pin PowerPAK 1212 T/R
***nell
MOSFET, N CH, 30V, 35A, PPK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Parte # Mfg. Descripción Valores Precio
SIS330DN-T1-GE3
DISTI # SIS330DN-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 30V 35A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIS330DN-T1-GE3
    DISTI # 70616569    		Vishay SiliconixSIS330DN-T1-GE3 N-channel MOSFET Transistor,19 A,30 V,8-Pin PowePAK 1212
    RoHS: Compliant    		0
    • 300:$0.5700
    • 600:$0.5600
    • 1500:$0.5500
    • 3000:$0.5400
    SIS330DN-T1-GE3
    DISTI # 78-SIS330DN-T1-GE3    		Vishay IntertechnologiesMOSFET 30 Volts 35 Amps 52 Watts
    RoHS: Compliant    		0
      SIS330DN-T1-GE3
      DISTI # 2056700      		Vishay IntertechnologiesMOSFET, N CH, 30V, 35A, PPK 1212
      RoHS: Compliant      		100
      • 1:$0.9650
      SIS330DN-T1-GE3
      DISTI # 2056700      		Vishay IntertechnologiesMOSFET, N CH, 30V, 35A, PPK 1212
      RoHS: Compliant      		0
      • 5:£0.5360
      • 25:£0.4560
      • 100:£0.4020
      • 250:£0.3960
      • 500:£0.3890
      Imagen Parte # Descripción
      SIS330DN-T1-GE3

      Mfr.#: SIS330DN-T1-GE3

      OMO.#: OMO-SIS330DN-T1-GE3

      		 MOSFET RECOMMENDED ALT 78-SISA14DN-T1-GE3
      SIS330DN-T1-GE3

      Mfr.#: SIS330DN-T1-GE3

      OMO.#: OMO-SIS330DN-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 30 Volts 35 Amps 52 Watts
      SIS330DN

      Mfr.#: SIS330DN

      OMO.#: OMO-SIS330DN-1190

      		 Nuevo y original
      SIS330DN-T1-E3

      Mfr.#: SIS330DN-T1-E3

      OMO.#: OMO-SIS330DN-T1-E3-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de SIS330DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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