BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1
Mfr. #:
BSZ110N08NS5ATMA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 80V 40A TSDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSZ110N08NS5ATMA1 Ficha de datos
Entrega:
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Pago:
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Más información:
BSZ110N08NS5ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
BSZ110N08NS5 SP001154280
Estilo de montaje
SMD / SMT
Paquete-Estuche
TSDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
50 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
3 ns
Hora de levantarse
3 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
40 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Resistencia a la fuente de desagüe de Rds
16.3 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
15 ns
Tiempo de retardo de encendido típico
9 ns
Qg-Gate-Charge
15 nC
Transconductancia directa-Mín.
17 S
Modo de canal
Mejora
Tags
BSZ110, BSZ11, BSZ1, BSZ
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BSZ110N08NS5 Series 80 V 40 A OptiMOSTM5 Power-Transistor - PG-TSDSON-8 FL
***ark
Mosfet, N-Ch, 80V, 40A, Tsdson; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0096Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descripción Valores Precio
BSZ110N08NS5ATMA1
DISTI # V36:1790_06384548
Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
215000
  • 5000:$0.3424
BSZ110N08NS5ATMA1
DISTI # V72:2272_06384548
Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
9990
  • 6000:$0.3511
  • 3000:$0.3817
  • 1000:$0.3822
  • 500:$0.4663
  • 250:$0.5001
  • 100:$0.5179
  • 25:$0.6403
  • 10:$0.6428
  • 1:$0.7306
BSZ110N08NS5ATMA1
DISTI # BSZ110N08NS5ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 80V 40A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
14980In Stock
  • 1000:$0.4674
  • 500:$0.5920
  • 100:$0.7634
  • 10:$0.9660
  • 1:$1.0900
BSZ110N08NS5ATMA1
DISTI # BSZ110N08NS5ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 80V 40A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
14980In Stock
  • 1000:$0.4674
  • 500:$0.5920
  • 100:$0.7634
  • 10:$0.9660
  • 1:$1.0900
BSZ110N08NS5ATMA1
DISTI # BSZ110N08NS5ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 80V 40A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
10000In Stock
  • 5000:$0.4023
BSZ110N08NS5ATMA1
DISTI # 31333857
Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
215000
  • 10000:$0.3150
  • 5000:$0.3500
BSZ110N08NS5ATMA1
DISTI # 31334674
Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
RoHS: Compliant
9990
  • 1000:$0.3503
  • 500:$0.4771
  • 250:$0.4780
  • 100:$0.4835
  • 25:$0.5976
  • 17:$0.6052
BSZ110N08NS5ATMA1
DISTI # BSZ110N08NS5
Infineon Technologies AGTrans MOSFET N-CH 80V 40A 8-Pin TSDSON T/R (Alt: BSZ110N08NS5)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 5000
    BSZ110N08NS5ATMA1
    DISTI # BSZ110N08NS5ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 80V 40A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ110N08NS5ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$0.3169
    • 10000:$0.3049
    • 20000:$0.2939
    • 30000:$0.2839
    • 50000:$0.2789
    BSZ110N08NS5ATMA1
    DISTI # SP001154280
    Infineon Technologies AGTrans MOSFET N-CH 80V 40A 8-Pin TSDSON T/R (Alt: SP001154280)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel
    Europe - 0
    • 5000:€0.4259
    • 10000:€0.3479
    • 20000:€0.3189
    • 30000:€0.2949
    • 50000:€0.2739
    BSZ110N08NS5ATMA1
    DISTI # 12AC9459
    Infineon Technologies AGMOSFET, N-CH, 80V, 40A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0096ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes2510
    • 1:$1.0000
    • 10:$0.8470
    • 25:$0.7820
    • 50:$0.7160
    • 100:$0.6510
    • 250:$0.6140
    • 500:$0.5750
    • 1000:$0.4540
    BSZ110N08NS5ATMA1
    DISTI # 726-BSZ110N08NS5ATMA
    Infineon Technologies AGMOSFET N-Ch 80V 40A TSDSON-8
    RoHS: Compliant
    0
    • 1:$0.9100
    • 10:$0.7700
    • 100:$0.5920
    • 500:$0.5230
    • 1000:$0.4130
    • 5000:$0.3660
    BSZ110N08NS5ATMA1
    DISTI # 2709877
    Infineon Technologies AGMOSFET, N-CH, 80V, 40A, TSDSON
    RoHS: Compliant
    0
    • 1:$1.7400
    • 10:$1.5400
    • 100:$1.2200
    BSZ110N08NS5ATMA1
    DISTI # C1S322000456457
    Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
    RoHS: Compliant
    9990
    • 250:$0.4780
    • 100:$0.4835
    • 25:$0.5976
    • 10:$0.6052
    BSZ110N08NS5ATMA1
    DISTI # C1S322000463518
    Infineon Technologies AGTrans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R
    RoHS: Compliant
    140000
    • 5000:$0.3424
    BSZ110N08NS5ATMA1
    DISTI # 2709877
    Infineon Technologies AGMOSFET, N-CH, 80V, 40A, TSDSON
    RoHS: Compliant
    3385
    • 5:£0.8340
    • 25:£0.7460
    • 100:£0.5710
    Imagen Parte # Descripción
    BSZ110N06NS3 G

    Mfr.#: BSZ110N06NS3 G

    OMO.#: OMO-BSZ110N06NS3-G

    MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
    BSZ110N08NS5ATMA1

    Mfr.#: BSZ110N08NS5ATMA1

    OMO.#: OMO-BSZ110N08NS5ATMA1

    MOSFET N-Ch 80V 40A TSDSON-8
    BSZ110N06NS3GATMA1

    Mfr.#: BSZ110N06NS3GATMA1

    OMO.#: OMO-BSZ110N06NS3GATMA1

    MOSFET MV POWER MOS
    BSZ110N06NS3GXT

    Mfr.#: BSZ110N06NS3GXT

    OMO.#: OMO-BSZ110N06NS3GXT-1190

    Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ110N06NS3GATMA1)
    BSZ110N06NS3G

    Mfr.#: BSZ110N06NS3G

    OMO.#: OMO-BSZ110N06NS3G-1190

    Nuevo y original
    BSZ110N08NS5

    Mfr.#: BSZ110N08NS5

    OMO.#: OMO-BSZ110N08NS5-1190

    N-CH 80V 40A 11mOhm SON-8FL
    BSZ110N06NS3GATMA1-CUT TAPE

    Mfr.#: BSZ110N06NS3GATMA1-CUT TAPE

    OMO.#: OMO-BSZ110N06NS3GATMA1-CUT-TAPE-1190

    Nuevo y original
    BSZ110N06NS3GATMA1

    Mfr.#: BSZ110N06NS3GATMA1

    OMO.#: OMO-BSZ110N06NS3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 60V 20A TSDSON-8
    BSZ110N06NS3 G

    Mfr.#: BSZ110N06NS3 G

    OMO.#: OMO-BSZ110N06NS3-G-126

    IGBT Transistors MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
    BSZ110N08NS5ATMA1

    Mfr.#: BSZ110N08NS5ATMA1

    OMO.#: OMO-BSZ110N08NS5ATMA1-INFINEON-TECHNOLOGIES

    RF Bipolar Transistors MOSFET N-Ch 80V 40A TSDSON-8
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de BSZ110N08NS5ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,42 US$
    0,42 US$
    10
    0,40 US$
    3,97 US$
    100
    0,38 US$
    37,65 US$
    500
    0,36 US$
    177,80 US$
    1000
    0,33 US$
    334,70 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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