OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IPS105N03L G

IPS105N03L G
Mfr. #:
IPS105N03L G
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET N-Ch 30V 35A IPAK-3 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPS105N03L G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS 3
embalaje
Tubo
Alias ​​de parte
IPS105N03LGAKMA1 SP000788218
Unidad de peso
0.139332 oz
Estilo de montaje
A través del orificio
Nombre comercial
OptiMOS
Paquete-Estuche
IPAK-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
38 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
2.4 ns
Hora de levantarse
14 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
35 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
10.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
14 ns
Tiempo de retardo de encendido típico
3.7 ns
Modo de canal
Mejora
Tags
IPS105N03LG, IPS105N, IPS105, IPS10, IPS1, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr
***et
Trans MOSFET N-CH 30V 35A 3-Pin(3+Tab) TO-251
***ronik
N-CH 30V 35A 11mOhm TO251-3 RoHSconf
***nell
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0088ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 38W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
Parte # Mfg. Descripción Valores Precio
IPS105N03LGAKMA1
DISTI # IPS105N03LGAKMA1-ND		Infineon Technologies AGMOSFET N-CH 30V 35A TO251-3
RoHS: Compliant
Min Qty: 1500
Container: Tube		Limited Supply - Call
    IPS105N03LGInfineon Technologies AGPower Field-Effect Transistor, 35A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
    RoHS: Compliant    		18615
    • 1000:$0.2100
    • 500:$0.2200
    • 100:$0.2300
    • 25:$0.2400
    • 1:$0.2500
    IPS105N03LGAKMA1Infineon Technologies AGPower Field-Effect Transistor, 35A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
    RoHS: Compliant    		27000
    • 1000:$0.2200
    • 500:$0.2300
    • 100:$0.2400
    • 25:$0.2500
    • 1:$0.2700
    IPS105N03L G
    DISTI # 726-IPS105N03LG    		Infineon Technologies AGMOSFET N-Ch 30V 35A IPAK-3 OptiMOS 3
    RoHS: Compliant    		0
      Imagen Parte # Descripción
      IPS1051L

      Mfr.#: IPS1051L

      OMO.#: OMO-IPS1051L-1190

      		 IC, MOSFET, IPS, SOT-223
      IPS1051LPBF

      Mfr.#: IPS1051LPBF

      OMO.#: OMO-IPS1051LPBF-1190

      		 MOSFET, Power, N-Ch, RDS(ON) 160 Milliohms, ID 1.4A, SOT-223, PD 2W, 3us td(on), -40deg
      IPS1051LTRPBF

      Mfr.#: IPS1051LTRPBF

      OMO.#: OMO-IPS1051LTRPBF-1190

      		 INTELLIGENT POWER SWITCH SINGLE/DUAL CHANNEL LOW SIDE DRIVER IN A SOT-223 PACKAG
      IPS1052G

      Mfr.#: IPS1052G

      OMO.#: OMO-IPS1052G-1190

      		 Nuevo y original
      IPS1052GPBF

      Mfr.#: IPS1052GPBF

      OMO.#: OMO-IPS1052GPBF-1190

      		 MOSFET, Power, N-Ch, RDS(ON) 160 Milliohms, SO-8, PD 1.25W, 3us td(on), 15us td(off)
      IPS1052GTR

      Mfr.#: IPS1052GTR

      OMO.#: OMO-IPS1052GTR-1190

      		 Nuevo y original
      IPS105N03L

      Mfr.#: IPS105N03L

      OMO.#: OMO-IPS105N03L-1190

      		 Nuevo y original
      IPS105N03LG

      Mfr.#: IPS105N03LG

      OMO.#: OMO-IPS105N03LG-1190

      		 Power Field-Effect Transistor, 35A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
      IPS105N03LGS

      Mfr.#: IPS105N03LGS

      OMO.#: OMO-IPS105N03LGS-1190

      		 Nuevo y original
      IPS105N03L G

      Mfr.#: IPS105N03L G

      OMO.#: OMO-IPS105N03L-G-126

      		 IGBT Transistors MOSFET N-Ch 30V 35A IPAK-3 OptiMOS 3
      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de IPS105N03L G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,27 US$
      0,27 US$
      10
      0,25 US$
      2,52 US$
      100
      0,24 US$
      23,88 US$
      500
      0,23 US$
      112,75 US$
      1000
      0,21 US$
      212,30 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
      Empezar con
      Top