IPI50N10S3L16AKSA1

IPI50N10S3L16AKSA1
Mfr. #:
IPI50N10S3L16AKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 100V 50A TO262-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPI50N10S3L16AKSA1 Ficha de datos
Entrega:
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HTML Datasheet:
IPI50N10S3L16AKSA1 DatasheetIPI50N10S3L16AKSA1 Datasheet (P4-P6)IPI50N10S3L16AKSA1 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IPI50N, IPI50, IPI5, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
100V, N-Ch, 15 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T, PG-TO262-3-3, RoHS
***et
Trans MOSFET N-CH 100V 50A 3-Pin(3+Tab) TO-262
*** Electronic Components
MOSFET N-Ch 100V 50A I2PAK-3 OptiMOS-T
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
***ical
Trans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube
***ineon SCT
The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications, PG-TO262-3-3, RoHS
***ineon
The 120V OptiMOS family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS technology gives new possibilites for optimized solutions. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***ineon SCT
100V, N-Ch, 11.6 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T, PG-TO262-3-3, RoHS
***el Electronic
Ceramic Capacitors 10pF 0603 (1608 Metric) ±1% C0G NP0 Tape & Reel (TR) 1 (Unlimited) General Purpose Surface Mount, MLCC -55°C~125°C Cap Ceramic 10pF 50V C0G 1% SMD 0603 125C T/R
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
***icroelectronics
N-channel 100 V, 0.013 Ohm typ., 45 A STripFET F7 Power MOSFET in I2PAK package
***ure Electronics
N-Channel 100 V 0.018 Ohm Through Hole STripFET™ VII DeepGATE™ Mosfet - I2PAK
***r Electronics
Power Field-Effect Transistor, 45A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***et
Trans MOSFET N-CH 100V 70A 3-Pin TO-262 Tube
***ronik
N-CH 100V 70A 12mOhm TO262-3
***et Europe
Nchannel 100V 70A 12.1mO
*** Electronics
N-CHANNEL POWER MOSFET
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
***ical
Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3+Tab) I2PAK Tube
***va Crawler
N-channel 75 V, 0.0095 Ohm, 80 A I2PAKSTripFET II Power MOSFET
***ure Electronics
N-Channel 75V 80A (Tc) 300W (Tc) Through Hole I2PAK
***r Electronics
Power Field-Effect Transistor, 80A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***icroelectronics SCT
Power MOSFETs, 75V, 80A, I2PAK, Tube
***i-Key
MOSFET N-CH 100V 7.3A I2PAK
***ser
MOSFETs 100V N-Ch QFET Logic Level
***el Electronic
IC SUPERVISOR 1 CHANNEL 3SSOP
*** Electronics
N-CHANNEL POWER MOSFET
Parte # Mfg. Descripción Valores Precio
IPI50N10S3L16AKSA1
DISTI # IPI50N10S3L16AKSA1-ND
Infineon Technologies AGMOSFET N-CH 100V 50A TO262-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$1.1051
IPI50N10S3L16AKSA1
DISTI # IPI50N10S3L16AKSA1
Infineon Technologies AGTrans MOSFET N-CH 100V 50A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI50N10S3L16AKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 5000:$0.7639
  • 3000:$0.7779
  • 2000:$0.8049
  • 1000:$0.8349
  • 500:$0.8659
IPI50N10S3L16AKSA1
DISTI # IPI50N10S3L16AKSA1
Infineon Technologies AGTrans MOSFET N-CH 100V 50A 3-Pin(3+Tab) TO-262 - Bulk (Alt: IPI50N10S3L16AKSA1)
RoHS: Compliant
Min Qty: 556
Container: Bulk
Americas - 0
  • 5560:$0.5709
  • 2780:$0.5819
  • 1668:$0.6019
  • 1112:$0.6249
  • 556:$0.6479
IPI50N10S3L16AKSA1
DISTI # SP000407120
Infineon Technologies AGTrans MOSFET N-CH 100V 50A 3-Pin(3+Tab) TO-262 (Alt: SP000407120)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.7619
  • 500:€0.7729
  • 100:€0.7799
  • 50:€0.7929
  • 25:€0.8189
  • 10:€0.8819
  • 1:€1.1359
IPI50N10S3L-16
DISTI # 726-IPI50N10S3L16
Infineon Technologies AGMOSFET N-Ch 100V 50A I2PAK-3 OptiMOS-T
RoHS: Compliant
489
  • 1:$1.4800
  • 10:$1.2600
  • 100:$1.0100
  • 500:$0.8850
  • 1000:$0.7330
  • 2500:$0.6830
  • 5000:$0.6570
  • 10000:$0.6320
IPI50N10S3L16AKSA1Infineon Technologies AGPower Field-Effect Transistor, 50A I(D), 100V, 0.0209ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant
10000
  • 1000:$0.5900
  • 500:$0.6200
  • 100:$0.6500
  • 25:$0.6800
  • 1:$0.7300
Imagen Parte # Descripción
IPI50N10S3L-16

Mfr.#: IPI50N10S3L-16

OMO.#: OMO-IPI50N10S3L-16

MOSFET N-Ch 100V 50A I2PAK-3 OptiMOS-T
IPI50N10S3L-16

Mfr.#: IPI50N10S3L-16

OMO.#: OMO-IPI50N10S3L-16-1190

MOSFET N-Ch 100V 50A I2PAK-3 OptiMOS-T
IPI50N10S3L16AKSA1

Mfr.#: IPI50N10S3L16AKSA1

OMO.#: OMO-IPI50N10S3L16AKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 100V 50A TO262-3
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de IPI50N10S3L16AKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,86 US$
0,86 US$
10
0,81 US$
8,14 US$
100
0,77 US$
77,07 US$
500
0,73 US$
363,95 US$
1000
0,69 US$
685,10 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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