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FDMD8900

FDMD8900
Mfr. #:
FDMD8900
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET PT8 30/12V Dual Nch Power Trench MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMD8900 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDMD8900 más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PQFN-12
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
66 A
Rds On - Resistencia de la fuente de drenaje:
3.4 mOhms
Vgs th - Voltaje umbral puerta-fuente:
0.8 mV
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
25 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.1 W
Configuración:
Doble
Nombre comercial:
PowerTrench Power Clip
Embalaje:
Carrete
Altura:
0.8 mm
Longitud:
5 mm
Serie:
FDMD8900
Tipo de transistor:
2 N-Channel
Ancho:
3.3 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
2.4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
2.3 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
25 ns
Tiempo típico de retardo de encendido:
8.7 ns
Unidad de peso:
0.002904 oz
Tags
FDMD, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-CH 30V 66A/42A 12-Pin PQFN T/R
***ical
Trans MOSFET N-CH 30V 19A/17A 12-Pin PQFN EP T/R
***rchild Semiconductor
This devices utilizes two optimized N-ch FETs in a dual 3.3x5mm thermally enhanced power package. The HS Source and LS drain are internally connected providing a low source inductance package, helping to provide the best FOM.
***ure Electronics
Single N-Channel 30 V 3.5 mOhm 20 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R / MOSFET N-CH 30V 21A 8-SOIC
***nell
MOSFET, N-CH 30V 21A SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 21A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.8V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2.35V
***ure Electronics
Single N-Channel 30 V 3.9 mOhm 6.5 W Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
MOSFET N-CH 30V 30.5A 8-SOIC / Trans MOSFET N-CH 30V 30.5A 8-Pin SOIC N T/R
***nell
MOSFET, N CH, 30V, 30.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
***i-Key
MOSFET N-CH 30V 21A 8SOIC
***ser
MOSFETs 30V N-Chnl PwrTernch SyncFET
***inecomponents.com
30V,N-CH, SO8 FLMP, POWER TRENCH SYNCFET
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; SVHC:No SVHC (15-Dec-2010); Current Id Max:21A; Package / Case:SOIC-8; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***roFlash
IRF8736PBF N-channel MOSFET Transistor, 18 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 6.8 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 30V 18A 8-Pin SOIC Tube / MOSFET N-CH 30V 18A 8-SOIC
***(Formerly Allied Electronics)
MOSFET; N Ch.; 30V; 18A; 4.8 MOHM; 17 NC QG; SO-8; Pb-Free
*** Source Electronics
Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R / MOSFET N-CH 30V 18A 8-SOIC
***ure Electronics
N-Channel 30 V 4.8 mO 2.5 W PowerTrench SyncFET Surface Mount- SOIC-8
***nell
MOSFET, N CH, 30V, 18A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on) and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology.
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDMD8900
DISTI # V79:2366_23246348		ON SemiconductorPT8 30/12V DUAL NCH POWER TREN1415
  • 3000:$0.8229
  • 500:$1.0363
  • 100:$1.1661
  • 10:$1.4109
  • 1:$1.7677
FDMD8900
DISTI # V72:2272_14140361		ON SemiconductorPT8 30/12V DUAL NCH POWER TREN1116
  • 1000:$1.0204
  • 500:$1.0297
  • 250:$1.1611
  • 100:$1.1712
  • 25:$1.4214
  • 10:$1.4330
  • 1:$1.7993
FDMD8900
DISTI # FDMD8900CT-ND		ON SemiconductorMOSFET 2N-CH 30V POWER
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDMD8900
    DISTI # FDMD8900DKR-ND    		ON SemiconductorMOSFET 2N-CH 30V POWER
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDMD8900
      DISTI # FDMD8900TR-ND      		ON SemiconductorMOSFET 2N-CH 30V POWER
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.9245
      FDMD8900
      DISTI # 32380245      		ON SemiconductorPT8 30/12V DUAL NCH POWER TREN1415
      • 6000:$0.8682
      • 3000:$0.8766
      • 1000:$0.9413
      • 500:$1.1140
      • 100:$1.2536
      • 10:$1.5167
      • 8:$1.9003
      FDMD8900
      DISTI # 25980313      		ON SemiconductorPT8 30/12V DUAL NCH POWER TREN1116
      • 1000:$0.9835
      • 500:$1.1069
      • 250:$1.2482
      • 100:$1.2590
      • 25:$1.5280
      • 10:$1.5405
      • 8:$1.9342
      FDMD8900
      DISTI # FDMD8900      		ON SemiconductorTrans MOSFET N-CH 30V 66A/42A 12-Pin PQFN T/R - Bulk (Alt: FDMD8900)
      Min Qty: 348
      Container: Bulk      		Americas - 0
      • 3480:$0.8879
      • 1740:$0.9109
      • 1044:$0.9229
      • 696:$0.9349
      • 348:$0.9409
      FDMD8900
      DISTI # FDMD8900      		ON SemiconductorTrans MOSFET N-CH 30V 66A/42A 12-Pin PQFN T/R - Tape and Reel (Alt: FDMD8900)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.8049
      • 18000:$0.8249
      • 12000:$0.8359
      • 6000:$0.8469
      • 3000:$0.8519
      FDMD8900
      DISTI # 512-FDMD8900      		ON SemiconductorMOSFET PT8 30/12V Dual Nch Power Trench MOSFET
      RoHS: Compliant      		2320
      • 1:$1.9100
      • 10:$1.6300
      • 100:$1.3000
      • 500:$1.1400
      • 1000:$0.9460
      • 3000:$0.8810
      • 6000:$0.8480
      • 9000:$0.8160
      FDMD8900Fairchild Semiconductor Corporation 
      RoHS: Not Compliant      		2798
      • 1000:$0.9500
      • 500:$1.0000
      • 100:$1.0400
      • 25:$1.0800
      • 1:$1.1700
      Imagen Parte # Descripción
      PMEG40T30ERX

      Mfr.#: PMEG40T30ERX

      OMO.#: OMO-PMEG40T30ERX

      		 Schottky Diodes & Rectifiers PMEG40T30ER/SOD123/S
      STM32L431KBU6TR

      Mfr.#: STM32L431KBU6TR

      OMO.#: OMO-STM32L431KBU6TR

      		 ARM Microcontrollers - MCU Ultra-low-power with FPU ARM Cortex-M4 MCU 80 MHz with 128 Kbytes Flash
      STM32L431CCU6

      Mfr.#: STM32L431CCU6

      OMO.#: OMO-STM32L431CCU6

      		 ARM Microcontrollers - MCU 16/32-BITS MICROS
      GRM21BR60J107ME15K

      Mfr.#: GRM21BR60J107ME15K

      OMO.#: OMO-GRM21BR60J107ME15K

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT
      C1005X7R1E224K050BE

      Mfr.#: C1005X7R1E224K050BE

      OMO.#: OMO-C1005X7R1E224K050BE

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 0402 25V 0.22uF X7R 10% T: 0.5mm
      LSM303AGRTR

      Mfr.#: LSM303AGRTR

      OMO.#: OMO-LSM303AGRTR

      		 IMUs - Inertial Measurement Units e-Compass with 3D digital linear acceleration sensor, 3D digital magnetic sensor
      STM32L431CCU6

      Mfr.#: STM32L431CCU6

      OMO.#: OMO-STM32L431CCU6-STMICROELECTRONICS

      		 IC MCU 32BIT 256KB FLASH 48QFPN
      LSM303AGRTR

      Mfr.#: LSM303AGRTR

      OMO.#: OMO-LSM303AGRTR-STMICROELECTRONICS

      		 IMU ACCEL/MAG I2C/SPI 12LGA
      GRM31CR60J227ME11L

      Mfr.#: GRM31CR60J227ME11L

      OMO.#: OMO-GRM31CR60J227ME11L-MURATA-ELECTRONICS

      		 Cap Ceramic 220uF 6.3V X5R 20% Pad SMD 1206 85C T/R
      GRM21BR60J107ME15K

      Mfr.#: GRM21BR60J107ME15K

      OMO.#: OMO-GRM21BR60J107ME15K-MURATA-ELECTRONICS

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT
      Disponibilidad
      Valores:
      Available
      En orden:
      1985
      Ingrese la cantidad:
      El precio actual de FDMD8900 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,91 US$
      1,91 US$
      10
      1,63 US$
      16,30 US$
      100
      1,30 US$
      130,00 US$
      500
      1,14 US$
      570,00 US$
      1000
      0,95 US$
      946,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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