MRF7S19100NR1

MRF7S19100NR1
Mfr. #:
MRF7S19100NR1
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors 1990MHZ 29W
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MRF7S19100NR1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
E
Polaridad del transistor:
Canal N
Tecnología:
Si
Vds - Voltaje de ruptura de drenaje-fuente:
65 V
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-270-4
Embalaje:
Carrete
Configuración:
Single Dual Drain Dual Gate
Altura:
2.64 mm
Longitud:
17.58 mm
Serie:
MRF7S19100N
Ancho:
9.07 mm
Marca:
NXP / Freescale
Modo de canal:
Mejora
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 0.5 V, 10 V
Unidad de peso:
0.058073 oz
Tags
MRF7S1910, MRF7S191, MRF7S19, MRF7S1, MRF7S, MRF7, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V
***et Europe
Trans MOSFET N-CH 65V 5-Pin TO-270 WB EP T/R
***ical
Trans RF MOSFET N-CH 65V 5-Pin TO-270 W T/R
***i-Key
MOSFET RF N-CH 28V 29W TO270-4
***hardson RFPD
RF POWER TRANSISTOR LDMOS
Parte # Mfg. Descripción Valores Precio
MRF7S19100NR1
DISTI # MRF7S19100NR1-ND
NXP SemiconductorsFET RF 65V 1.99GHZ TO270-4
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Limited Supply - Call
    MRF7S19100NR1
    DISTI # MRF7S19100NR1
    Avnet, Inc.Trans MOSFET N-CH 65V 5-Pin TO-270 WB EP T/R - Bulk (Alt: MRF7S19100NR1)
    RoHS: Compliant
    Min Qty: 8
    Container: Bulk
    Americas - 0
    • 80:$41.7900
    • 40:$42.5900
    • 24:$44.1900
    • 16:$45.9900
    • 8:$47.8900
    MRF7S19100NR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
    RoHS: Compliant
    3387
    • 1000:$43.3000
    • 500:$45.5800
    • 100:$47.4600
    • 25:$49.4900
    • 1:$53.3000
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    MRF7S19100NR1

    Mfr.#: MRF7S19100NR1

    OMO.#: OMO-MRF7S19100NR1-NXP-SEMICONDUCTORS

    FET RF 65V 1.99GHZ TO270-4
    Disponibilidad
    Valores:
    Available
    En orden:
    4000
    Ingrese la cantidad:
    El precio actual de MRF7S19100NR1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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