FDB088N08

FDB088N08
Mfr. #:
FDB088N08
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET NCH 75V 8.8Mohm
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDB088N08 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
75 V
Id - Corriente de drenaje continua:
85 A
Rds On - Resistencia de la fuente de drenaje:
7.3 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
160 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
PowerTrench
Embalaje:
Carrete
Altura:
4.83 mm
Longitud:
10.67 mm
Serie:
FDB088N08
Tipo de transistor:
1 N-Channel
Ancho:
9.65 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
102 ns
Tipo de producto:
MOSFET
Hora de levantarse:
158 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
244 ns
Tiempo típico de retardo de encendido:
45 ns
Unidad de peso:
0.046296 oz
Tags
FDB088, FDB08, FDB0, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    R***d
    R***d
    RU

    Ordered a programmer with a clothespin for sale in dr alika with a coupon of $4, total paid 53 rubles. Came to perm for a month in one package with a doll. In appearance well, in practice did not check. The seller is good.

    2019-05-29
    R***z
    R***z
    ES

    All right. all right. All right.

    2019-04-30
    E**z
    E**z
    RU

    Normal stabilizers. Checked on the stand, all within the permissible limits, kept as expected. It was 53 days. But! Don't be surprised. You buy for 45 rubles, so everything is fine. Seller recommend.

    2019-04-30
    A***k
    A***k
    RU

    Leds working, i'm happy. Thank you.

    2019-03-02
***Yang
Trans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ure Electronics
Single N-Channel 75 V 160 W 118 nC PowerTrench Surface Mount Mosfet - TO-263-3
***emi
N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ
***r Electronics
Power Field-Effect Transistor, 85A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N CH, 75V, 85A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ark
Mosfet Transistor, N Channel, 106 A, 75 V, 7 Mohm, 10 V, 4 V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2
*** Source Electronics
MOSFET N-CH 75V 106A D2PAK / Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK Tube
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 106A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation
***ure Electronics
Single N-Channel 75 V 0.0078 Ohm 250 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0078Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 75V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:70A; Cont Current Id @ 25°C:100A; Current Id Max:100A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:3.8W; Pulse Current Idm:520A; Rth:0.75; Termination Type:SMD; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***icroelectronics
N-CHANNEL 75V - 0.0065OHM -120A D2PAK STripFET II MOSFET
***roFlash
Mosfet Transistor, N Channel, 70 A, 75 V, 6.5 Mohm, 10 V, 4 V
***ical
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 75 V 0.0075 O 160 nC Surface Mount STripFET™II MosFet - D2PAK
***ark
MOSFET, N CH, 75V, 120A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:70A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:-RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
***nell
MOSFET, N CH, 75V, 120A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 120A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 75V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-CHANNEL 55V - 0.005 OHM -120A D2PAK STripFET II MOSFET
***ical
Trans MOSFET N-CH 55V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 120A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N CH, 55V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descripción Valores Precio
FDB088N08
DISTI # FDB088N08TR-ND
ON SemiconductorMOSFET N-CH 75V 75A D2PAK
Min Qty: 800
Container: Tape & Reel (TR)
800In Stock
  • 5600:$0.9962
  • 2400:$1.0111
  • 1600:$1.0860
  • 800:$1.3108
FDB088N08
DISTI # FDB088N08CT-ND
ON SemiconductorMOSFET N-CH 75V 75A D2PAK
Min Qty: 1
Container: Cut Tape (CT)
800In Stock
  • 100:$1.6432
  • 10:$2.0440
  • 1:$2.2800
FDB088N08
DISTI # FDB088N08DKR-ND
ON SemiconductorMOSFET N-CH 75V 75A D2PAK
Min Qty: 1
Container: Digi-Reel®
800In Stock
  • 100:$1.6432
  • 10:$2.0440
  • 1:$2.2800
FDB088N08_F141
DISTI # FDB088N08_F141-ND
ON SemiconductorMOSFET N-CHANNEL 75V 120A D2PAK
Container: Tape & Reel (TR)
Limited Supply - Call
    FDB088N08
    DISTI # FDB088N08
    ON SemiconductorTrans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FDB088N08)
    Min Qty: 302
    Container: Bulk
    Americas - 0
    • 3020:$1.0239
    • 1510:$1.0499
    • 906:$1.0639
    • 604:$1.0769
    • 302:$1.0839
    FDB088N08
    DISTI # FDB088N08
    ON SemiconductorTrans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB088N08)
    Min Qty: 800
    Container: Tape and Reel
    Europe - 0
      FDB088N08
      DISTI # FDB088N08
      ON SemiconductorTrans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB088N08)
      RoHS: Compliant
      Min Qty: 800
      Container: Reel
      Americas - 0
      • 8000:$0.9239
      • 4800:$0.9479
      • 3200:$0.9599
      • 1600:$0.9719
      • 800:$0.9789
      FDB088N08
      DISTI # 64R2992
      ON SemiconductorN-Channel PowerTrench MOSFET 75V, 85A, 8.8m / REEL
      RoHS: Not Compliant
      0
      • 30000:$0.9910
      • 18000:$1.0300
      • 12000:$1.0700
      • 6000:$1.1800
      • 3000:$1.2400
      • 1:$1.3100
      FDB088N08
      DISTI # 512-FDB088N08
      ON SemiconductorMOSFET NCH 75V 8.8Mohm
      RoHS: Compliant
      784
      • 1:$2.2100
      • 10:$1.8800
      • 100:$1.5000
      • 500:$1.3200
      • 800:$1.0900
      • 2400:$1.0200
      • 4800:$0.9740
      FDB088N08Fairchild Semiconductor CorporationPower Field-Effect Transistor, 85A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      19579
      • 1000:$1.1000
      • 500:$1.1500
      • 100:$1.2000
      • 25:$1.2500
      • 1:$1.3500
      FDB088N08
      DISTI # 7599465
      ON SemiconductorIn a Pack of 2, FDB088N08 N-Channel MOSFET, 120 A, 75 V PowerTrench, 3-Pin D2PAK ON Semiconductor, PK
      Min Qty: 2
      Container: Package
      690
      • 2:$3.0350
      • 20:$1.7220
      • 100:$1.3770
      • 400:$1.1890
      • 800:$1.0010
      FDB088N08
      DISTI # 1662550
      ON SemiconductorOn a Reel of 800, FDB088N08 N-Channel MOSFET, 120 A, 75 V PowerTrench, 3-Pin D2PAK ON Semiconductor, RL
      Min Qty: 800
      Container: Reel
      0
      • 800:$1.0260
      FDB088N08ISCD²PAK/TO-2635000
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        MAX9944ASA+

        Mfr.#: MAX9944ASA+

        OMO.#: OMO-MAX9944ASA-

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        OMO.#: OMO-TQ2SL-5V-Z

        Low Signal Relays - PCB RELAY 2A 5VDC LOW PROFILE SMD
        H2171-01

        Mfr.#: H2171-01

        OMO.#: OMO-H2171-01

        Circuit Board Hardware - PCB TERMINAL PIN
        AVR-M1608C080MTAAB

        Mfr.#: AVR-M1608C080MTAAB

        OMO.#: OMO-AVR-M1608C080MTAAB

        Varistors 0603 8V 30A 650pF
        QSH-090-01-L-D-A

        Mfr.#: QSH-090-01-L-D-A

        OMO.#: OMO-QSH-090-01-L-D-A-SAMTEC

        Conn Micro High Speed Socket Strip SKT 180 POS 0.5mm Solder ST SMD Tray
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        Mfr.#: MAX9944ASA+

        OMO.#: OMO-MAX9944ASA--MAXIM-INTEGRATED

        Precision Amplifiers Precision Op Amp
        Disponibilidad
        Valores:
        809
        En orden:
        2792
        Ingrese la cantidad:
        El precio actual de FDB088N08 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        2,21 US$
        2,21 US$
        10
        1,88 US$
        18,80 US$
        100
        1,50 US$
        150,00 US$
        500
        1,32 US$
        660,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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