IPD80R1K0CEATMA1

Mfr. #:: IPD80R1K0CEATMA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-Ch 800V 5.7A DPAK-2
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPD80R1K0CEATMA1 Ficha de datos
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Atributo del producto
Valor de atributo

Fabricante:: Infineon

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: PG-TO-252-3

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 800 V

Id - Corriente de drenaje continua:: 5.7 A

Rds On - Resistencia de la fuente de drenaje:: 950 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 3 V

Vgs - Voltaje puerta-fuente:: 10 V

Qg - Carga de puerta:: 31 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 83 W

Configuración:: Único

Nombre comercial:: CoolMOS

Embalaje:: Carrete

Altura:: 2.3 mm

Longitud:: 6.5 mm

Serie:: CoolMOS CE

Tipo de transistor:: 1 N-Channel

Ancho:: 6.22 mm

Marca:: Infineon Technologies

Otoño:: 8 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 15 ns

Cantidad de paquete de fábrica:: 2500

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 72 ns

Tiempo típico de retardo de encendido:: 25 ns

Parte # Alias:: IPD80R1K0CE SP001130974

Unidad de peso:: 0.139332 oz

Tags: IPD80R1K0, IPD80R1, IPD80R, IPD80, IPD8, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

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IPD80R1K0CEATMA1 Descripción

***ure Electronics: N-Channel 800 V 0.95 O 31 nC CoolMOS CE Power Transistor - DPAK

***ark: MOSFET, N-CH, 800V, 5.7A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

*** Stop Electro: Power Field-Effect Transistor, 5.7A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N-CH, 800V, 5.7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.7A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: 800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting

***ure Electronics: Single N-Channel 800 V 900 mOhm 41 nC CoolMOS Power Mosfet - TO-252-3

***roFlash: Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):900mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6A; Package / Case:TO-252; Power Dissipation Pd:83W; Pulse Current Idm:18A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 6 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) mOhm = 900 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 83

***ineon: 800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar

***emi: N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK

*** Source Electronics: MOSFET N-CH 800V 6A DPAK / isc N-Channel MOSFET Transistor

***nell: MOSFET, N-CH, 800V, 6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.71ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Pow

*** Stop Electro: Power Field-Effect Transistor, 6A I(D), 800V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

***ure Electronics: N-Channel 650 V 0.75 Ohm Cool MOS Power Transistor - PG-TO252-3

*** Source Electronics: Trans MOSFET N-CH 650V 6.2A 3-Pin(2+Tab) DPAK T/R / CoolMOS Power Transistor

***ment14 APAC: MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):750mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:74W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.2A; Package / Case:TO-252; Power Dissipation Pd:74W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

***icroelectronics: N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package

*** Electronics: STMICROELECTRONICS STD11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V

***ark: MOSFET, N-CH, 650V, 7A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Qualification:-RoHS Compliant: Yes

***nell: MOSFET, N CHANNEL, 650V, 7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)

***ure Electronics: E Series N Channel 620 V 900 mO 34 nC Surface Mount Power Mosfet - DPAK

***ical: Trans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK

***enic: 620V 6A 78W 900m´Î@10V3A 4V@250Ã×A N Channel TO-252-2(DPAK) MOSFETs ROHS

***ment14 APAC: MOSFET, N CH, 620V, 6A, TO-252-3

*** Electronics: MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS

***nell: MOSFET, N CH, 620V, 6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 620V; On Resistance Rds(on): 0.78ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 78W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C

***ure Electronics: Single N-Channel 650 V 600 mOhm 21 nC SIPMOS® Power Mosfet - TO-252-3

***p One Stop Global: Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) TO-252 T/R

***ow.cn: SPD07N60C3BTMA1 Infineon Technologies AG Transistors MOSFETs N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R - Arrow.com

IPD80R1K0CEATMA1 Más información

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ CE Power MOSFETs: Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPD80R1K0CEATMA1 DISTI # V72:2272_06383396	Infineon Technologies AG	Trans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1913	1000:$0.6195 500:$0.7917 250:$0.9043 100:$0.9414 25:$1.0984 10:$1.2205 1:$1.5682
IPD80R1K0CEATMA1 DISTI # V36:1790_06383396	Infineon Technologies AG	Trans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0	2500000:$0.5123 1250000:$0.5127 250000:$0.5501 25000:$0.6208 2500:$0.6329
IPD80R1K0CEATMA1 DISTI # IPD80R1K0CEATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 800V 5.7A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2117In Stock	1000:$0.7135 500:$0.9037 100:$1.0940 10:$1.4030 1:$1.5700
IPD80R1K0CEATMA1 DISTI # IPD80R1K0CEATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 800V 5.7A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2117In Stock	1000:$0.7135 500:$0.9037 100:$1.0940 10:$1.4030 1:$1.5700
IPD80R1K0CEATMA1 DISTI # IPD80R1K0CEATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 800V 5.7A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	12500:$0.5911 5000:$0.6142 2500:$0.6465
IPD80R1K0CEATMA1 DISTI # 33632580	Infineon Technologies AG	Trans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.5508
IPD80R1K0CEATMA1 DISTI # 29716466	Infineon Technologies AG	Trans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1913	12:$1.5682
IPD80R1K0CEATMA1 DISTI # IPD80R1K0CEATMA1	Infineon Technologies AG	Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R1K0CEATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	25000:$0.5579 15000:$0.5679 10000:$0.5879 5000:$0.6099 2500:$0.6329
IPD80R1K0CEATMA1 DISTI # SP001130974	Infineon Technologies AG	Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R (Alt: SP001130974) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.5229 15000:€0.5629 10000:€0.6099 5000:€0.6649 2500:€0.8129
IPD80R1K0CEATMA1 DISTI # 97Y1825	Infineon Technologies AG	MOSFET, N-CH, 800V, 5.7A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:5.7A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	2500	1000:$0.6670 500:$0.8440 250:$0.9000 100:$0.9550 50:$1.0500 25:$1.1500 10:$1.2400 1:$1.4500
IPD80R1K0CEATMA1 DISTI # 726-IPD80R1K0CEATMA1	Infineon Technologies AG	MOSFET N-Ch 800V 5.7A DPAK-2 RoHS: Compliant	6199	1:$1.4400 10:$1.2300 100:$0.9460 500:$0.8360 1000:$0.6600
IPD80R1K0CEATMA1 DISTI # 9140223P	Infineon Technologies AG	MOSFET N-CHANNEL 800V 18A COOLMOS TO252, RL	6740	500:£0.5900 200:£0.6450 50:£0.7310
IPD80R1K0CEATMA1 DISTI # 2617465	Infineon Technologies AG	MOSFET, N-CH, 800V, 5.7A, TO-252-3	2558	500:£0.6440 250:£0.6870 100:£0.7290 10:£0.9970 1:£1.2600
IPD80R1K0CEATMA1 DISTI # 2617465	Infineon Technologies AG	MOSFET, N-CH, 800V, 5.7A, TO-252-3 RoHS: Compliant	33	1000:$1.0800 500:$1.3700 100:$1.6500 10:$2.1200 1:$2.3700

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Disponibilidad

Valores:: Available
En orden:: 1990
Ingrese la cantidad:

El precio actual de IPD80R1K0CEATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,44 US$~~; ~~1,44 US$~~

10: ~~1,23 US$~~; ~~12,30 US$~~

100: ~~0,95 US$~~; ~~94,60 US$~~

500: ~~0,84 US$~~; ~~418,00 US$~~

1000: ~~0,66 US$~~; ~~660,00 US$~~

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IPD80R1K0CEATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes