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MMBT5550LT3G

MMBT5550LT3G
Mfr. #:
MMBT5550LT3G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT SS HV XSTR NPN 160V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MMBT5550LT3G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MMBT5550LT3G DatasheetMMBT5550LT3G Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-23-3
Polaridad del transistor:
NPN
Configuración:
Único
Voltaje colector-emisor VCEO Max:
140 V
Colector- Voltaje base VCBO:
160 V
Emisor- Voltaje base VEBO:
6 V
Voltaje de saturación colector-emisor:
0.15 V
Corriente máxima del colector de CC:
0.06 A
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
MMBT5550L
Altura:
0.94 mm
Longitud:
2.9 mm
Embalaje:
Carrete
Ancho:
1.3 mm
Marca:
EN Semiconductor
Corriente continua del colector:
600 mA
Colector de CC / Ganancia base hfe Min:
60
Pd - Disipación de energía:
225 mW
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
10000
Subcategoría:
Transistores
Unidad de peso:
0.000282 oz
Tags
MMBT5550LT, MMBT5550L, MMBT5550, MMBT555, MMBT55, MMBT5, MMBT, MMB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
***Yang
Trans GP BJT NPN 140V 0.06A 3-Pin SOT-23 T/R - Tape and Reel
***emi
High Voltage NPN Bipolar Transistor
***enic
140V 225mW 600mA 60@10mA5V NPN 250mV@50mA5mA -55¡Í~+150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
***ark
BIPOLAR TRANSISTOR, NPN, 140V; Transistor Polarity:NPN; Collector Emitter Voltage Max:140V; Continuous Collector Current:600mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
***(Formerly Allied Electronics)
ON Semi MMBT5551LT1G NPN Bipolar Transistor; 0.06 A; 160 V; 3-Pin SOT-23
***enic
160V 225mW 600mA NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
***Yang
Transistor GP BJT NPN 160V 0.06A 3-Pin SOT-23 T/R - Tape and Reel
***ure Electronics
MMBT5551L Series 160 V 600 mA Surface Mount NPN Transistor - SOT-23
***roFlash
Small Signal Bipolar Transistor, 0.06A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
***Parts
Transistor NPN, SOT-23-3 (TO-236) 160V 600mASurface Mount
***emi
High Voltage NPN Bipolar Transistor
***ponent Stockers USA
60 mA 160 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
***nell
TRANSISTOR, NPN, 160V, 600MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: -; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 30hFE; Tran
***(Formerly Allied Electronics)
ON Semi MMBT5551LT3G NPN Bipolar Transistor; 0.6 A; 160 V; 3-Pin SOT-23
***Yang
Transistor GP BJT NPN 160V 0.06A 3-Pin SOT-23 T/R - Tape and Reel
***ure Electronics
MMBT5551 Series NPN 160 V 0.6 A SMT High Voltage Silicon Transistor - SOT-23
***roFlash
Small Signal Bipolar Transistor, 0.06A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
***emi
High Voltage NPN Bipolar Transistor
***ponent Stockers USA
60 mA 160 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
***ark
Transistor Polarity:NPN; Collector Emitter Voltage Max:160V; Continuous Collector Current:600mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:-; DC Current Gain hFE Min:80hFE RoHS Compliant: Yes
***(Formerly Allied Electronics)
ON Semi MMBTH10LT1G NPN RF Bipolar Transistor; 0.004 A; 25 V; 3-Pin SOT-23
*** Source Electronics
TRANS SS VHF MIXER NPN 25V SOT23 / Trans RF BJT NPN 25V 300mW 3-Pin SOT-23 T/R
***ure Electronics
MMBTH Series 25 V 100 nA Surface Mount NPN Silicon VHF/UHF Transistor - SOT-23
***emi
NPN Bipolar Transistor hFE ≥ 60; fT ≥ 650 MHz
*** Stop Electro
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236
***enic
25V 225mW 60@4mA10V 650MHz 500mV@4A400mA NPN -55¡Í~+150¡Í@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
***nell
TRANSISTOR, NPN, FULL REEL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 650MHz; Power Dissipation Pd: 225mW; DC Collector Current: 4mA; DC Current Gain hFE: 60hFE; Transistor Cas
Parte # Mfg. Descripción Valores Precio
MMBT5550LT3G
DISTI # V72:2272_07304853		ON SemiconductorTrans GP BJT NPN 140V 0.6A Automotive 3-Pin SOT-23 T/R
RoHS: Compliant		6019
  • 6000:$0.0301
  • 3000:$0.0348
  • 1000:$0.0395
  • 500:$0.0485
  • 250:$0.0539
  • 100:$0.0658
  • 25:$0.1674
  • 10:$0.1860
  • 1:$0.2090
MMBT5550LT3G
DISTI # V36:1790_07304853		ON SemiconductorTrans GP BJT NPN 140V 0.6A Automotive 3-Pin SOT-23 T/R
RoHS: Compliant		0
    MMBT5550LT3G
    DISTI # MMBT5550LT3GOSCT-ND    		ON SemiconductorTRANS NPN 140V 0.6A SOT-23
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		21334In Stock
    • 1000:$0.0448
    • 500:$0.0657
    • 100:$0.1067
    • 10:$0.1960
    • 1:$0.2100
    MMBT5550LT3G
    DISTI # MMBT5550LT3GOSDKR-ND    		ON SemiconductorTRANS NPN 140V 0.6A SOT-23
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		21334In Stock
    • 1000:$0.0448
    • 500:$0.0657
    • 100:$0.1067
    • 10:$0.1960
    • 1:$0.2100
    MMBT5550LT3G
    DISTI # MMBT5550LT3GOSTR-ND    		ON SemiconductorTRANS NPN 140V 0.6A SOT-23
    RoHS: Compliant
    Min Qty: 10000
    Container: Tape & Reel (TR)    		20000In Stock
    • 250000:$0.0193
    • 100000:$0.0217
    • 50000:$0.0232
    • 30000:$0.0261
    • 10000:$0.0290
    MMBT5550LT3G
    DISTI # 30580379    		ON SemiconductorTrans GP BJT NPN 140V 0.6A Automotive 3-Pin SOT-23 T/R
    RoHS: Compliant    		16030
    • 1450:$0.0176
    MMBT5550LT3G
    DISTI # 25774585    		ON SemiconductorTrans GP BJT NPN 140V 0.6A Automotive 3-Pin SOT-23 T/R
    RoHS: Compliant    		6019
    • 6000:$0.0316
    • 3000:$0.0371
    • 1000:$0.0425
    • 500:$0.0521
    • 250:$0.0579
    • 221:$0.0644
    MMBT5550LT3G
    DISTI # MMBT5550LT3G    		ON SemiconductorTrans GP BJT NPN 140V 0.06A 3-Pin SOT-23 T/R (Alt: MMBT5550LT3G)
    RoHS: Compliant
    Min Qty: 10000
    Container: Tape and Reel    		Europe - 0
    • 100000:€0.0151
    • 60000:€0.0163
    • 40000:€0.0193
    • 20000:€0.0236
    • 10000:€0.0303
    MMBT5550LT3G
    DISTI # MMBT5550LT3G    		ON SemiconductorTrans GP BJT NPN 140V 0.06A 3-Pin SOT-23 T/R - Bulk (Alt: MMBT5550LT3G)
    RoHS: Compliant
    Min Qty: 12500
    Container: Bulk    		Americas - 0
    • 125000:$0.0247
    • 62500:$0.0253
    • 37500:$0.0256
    • 25000:$0.0260
    • 12500:$0.0261
    MMBT5550LT3G
    DISTI # MMBT5550LT3G    		ON SemiconductorTrans GP BJT NPN 140V 0.06A 3-Pin SOT-23 T/R - Tape and Reel (Alt: MMBT5550LT3G)
    RoHS: Compliant
    Min Qty: 10000
    Container: Reel    		Americas - 0
    • 100000:$0.0153
    • 60000:$0.0157
    • 40000:$0.0158
    • 20000:$0.0160
    • 10000:$0.0162
    MMBT5550LT3G
    DISTI # 83K8579    		ON SemiconductorBIPOLAR TRANSISTOR, NPN, 140V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:140V,Transition Frequency ft:-,Power Dissipation Pd:225mW,DC Collector Current:600mA,DC Current Gain hFE:60hFE,No. of Pins:3Pins RoHS Compliant: Yes0
    • 30000:$0.0270
    • 15000:$0.0280
    • 1000:$0.0300
    • 500:$0.0600
    • 250:$0.0620
    • 100:$0.0640
    • 50:$0.1780
    • 1:$0.2160
    MMBT5550LT1G
    DISTI # 863-MMBT5550LT1G    		ON SemiconductorBipolar Transistors - BJT SS HV XSTR NPN 160V
    RoHS: Compliant    		116975
    • 1:$0.1800
    • 10:$0.1610
    • 100:$0.0570
    • 1000:$0.0380
    • 3000:$0.0290
    • 9000:$0.0250
    • 24000:$0.0230
    • 45000:$0.0200
    MMBT5550LT3G
    DISTI # 863-MMBT5550LT3G    		ON SemiconductorBipolar Transistors - BJT SS HV XSTR NPN 160V
    RoHS: Compliant    		15731
    • 1:$0.2000
    • 10:$0.1780
    • 100:$0.0630
    • 1000:$0.0420
    • 2500:$0.0320
    • 10000:$0.0280
    • 20000:$0.0250
    • 50000:$0.0230
    MMBT5550LT3GON SemiconductorSmall Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
    RoHS: Compliant    		3080000
    • 1:$0.0300
    • 25:$0.0300
    • 100:$0.0300
    • 500:$0.0300
    • 1000:$0.0300
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    Disponibilidad
    Valores:
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    En orden:
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    Ingrese la cantidad:
    El precio actual de MMBT5550LT3G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,19 US$
    0,19 US$
    10
    0,18 US$
    1,76 US$
    100
    0,06 US$
    6,20 US$
    1000
    0,04 US$
    41,00 US$
    2500
    0,03 US$
    77,50 US$
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