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PTFC260362SCV1R250XTMA1

PTFC260362SCV1R250XTMA1
Mfr. #:
PTFC260362SCV1R250XTMA1
Fabricante:
Infineon Technologies
Descripción:
RF MOSFET Transistors RFP-LD10M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PTFC260362SCV1R250XTMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
PTFC260362SC R250 SP001178450 V1
Paquete-Estuche
H-37248-4
Tecnología
Si
Tags
PTFC260, PTFC26, PTFC2, PTFC, PTF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
LDMOS FET, High Power RF, 32W, 28V, 2.496-2.69GHz, H-37248H-4 Pkg, T/R 250 TXV Level Screening
***i-Key
IC AMP RF LDMOS
***ineon
High Power RF LDMOS FET 32 W, 28 V, 2496 2690 MHz | Summary of Features: Input matching; Typical pulsed CW performance, 2690 MHz, 28 V (10 s pulse width, 10% duty cycle, class AB test) - Output power @ P1dB = 33 W - Efficiency = 52% - Gain = 17.8 dB; Typical single-carrier WCDMA performance, 2690 MHz, 28 V, 10 dB PAR - Output power = 8 W avg - Gain = 18.6 dB - Efficiency = 30% - ACPR = -35 dBc; Capable of handling 10:1 VSWR @30 V, 32 W (CW) output power; Integrated ESD protection: HBM, Class 1B (per JESD22-A114)
Parte # Mfg. Descripción Valores Precio
PTFC260362SCV1R250XTMA1
DISTI # PTFC260362SCV1R250XTMA1		Infineon Technologies AGLDMOS FET, High Power RF, 32W, 28V, 2.496-2.69GHz, H-37248H-4 Pkg, T/R 250 TXV Level Screening - Tape and Reel (Alt: PTFC260362SCV1R250XTMA1)
RoHS: Compliant
Min Qty: 250
Container: Reel		Americas - 0
    PTFC260362SCV1R250XTMA1
    DISTI # 726-PTFC260362SCV1R2    		Infineon Technologies AGRF MOSFET Transistors RFP-LD10M0
      Imagen Parte # Descripción
      PTFC260362SCV1R250XTMA1

      Mfr.#: PTFC260362SCV1R250XTMA1

      OMO.#: OMO-PTFC260362SCV1R250XTMA1-319

      		 RF MOSFET Transistors RFP-LD10M
      PTFC260362SC

      Mfr.#: PTFC260362SC

      OMO.#: OMO-PTFC260362SC-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de PTFC260362SCV1R250XTMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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