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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Parte # | Mfg. | Descripción | Valores | Precio |
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F475R06W1E3BOMA1 DISTI # V99:2348_17558450 | Infineon Technologies AG | Trans IGBT Module N-CH 600V 100A 275000mW 15-Pin Tray RoHS: Compliant | 8 |
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F475R06W1E3BOMA1 DISTI # F475R06W1E3BOMA1-ND | Infineon Technologies AG | IGBT MODULE VCES 600V 75A RoHS: Not compliant Min Qty: 24 Container: Bulk | Temporarily Out of Stock |
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F475R06W1E3BOMA1 DISTI # 33693727 | Infineon Technologies AG | Trans IGBT Module N-CH 600V 100A 275000mW 15-Pin Tray RoHS: Compliant | 24 |
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F475R06W1E3BOMA1 DISTI # 26612384 | Infineon Technologies AG | Trans IGBT Module N-CH 600V 100A 275000mW 15-Pin Tray RoHS: Compliant | 8 |
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F475R06W1E3BOMA1 DISTI # F475R06W1E3BOMA1 | Infineon Technologies AG | LOW POWER EASY - Trays (Alt: F475R06W1E3BOMA1) RoHS: Compliant Min Qty: 24 Container: Tray | Americas - 0 |
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F475R06W1E3BOMA1 DISTI # 13AC8781 | Infineon Technologies AG | IGBT, MODULE, N-CH, 600V, 100A,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.45V,Power Dissipation Pd:275W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case RoHS Compliant: Yes | 0 |
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F4-75R06W1E3 DISTI # 641-F4-75R06W1E3 | Infineon Technologies AG | IGBT Modules N-CH 600V 100A | 50 |
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F475R06W1E3BOMA1 DISTI # 2726112 | Infineon Technologies AG | IGBT, MODULE, N-CH, 600V, 100A RoHS: Compliant | 0 |
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F475R06W1E3BOMA1 DISTI # 2726112 | Infineon Technologies AG | IGBT, MODULE, N-CH, 600V, 100A | 318 |
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Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: F475R06W1E3BOMA1 |
IGBT MODULE VCES 600V 75A | |
Mfr.#: F475R06W1E3 OMO.#: OMO-F475R06W1E3-1190 |
IGBT Module, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Saturation Voltage Vce(on):600V, Power Dissipation Pd:275W, Collector Emitter Voltage V(br)ceo:600V, No. o |