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NGTB40N65IHRTG

NGTB40N65IHRTG
Mfr. #:
NGTB40N65IHRTG
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors 650V/40A MONOLITHIC RC IG
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NGTB40N65IHRTG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB40N65IHRTG DatasheetNGTB40N65IHRTG Datasheet (P4-P6)NGTB40N65IHRTG Datasheet (P7-P8)
ECAD Model:
Más información:
NGTB40N65IHRTG más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-3P
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.55 V
Corriente continua del colector a 25 C:
80 A
Pd - Disipación de energía:
405 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Marca:
EN Semiconductor
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Unidad de peso:
0.194007 oz
Tags
NGTB40N65I, NGTB40N65, NGTB40N6, NGTB40, NGTB4, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A 650 V Monolithic reverse conducting IGBT
***ical
Trans IGBT Chip N-CH 650V 80A 405000mW 3-Pin(3+Tab) TO-3P Tube
***nell
TRANSISTOR, IGBT, 650V, 80A, TO-3P
***ark
Transistor, Igbt, 650V, 80A, To-3P; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:405W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-3P; No. Of Pins:3Pins; Rohs Compliant: Yes
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
Parte # Mfg. Descripción Valores Precio
NGTB40N65IHRTG
DISTI # V36:1790_18357508		ON Semiconductor650V/40A MONOLITHIC RC IG0
    NGTB40N65IHRTG
    DISTI # V99:2348_18357508    		ON Semiconductor650V/40A MONOLITHIC RC IG0
      NGTB40N65IHRTG
      DISTI # NGTB40N65IHRTGOS-ND      		ON Semiconductor650V/40A RC IGBT
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		85In Stock
      • 30:$2.5727
      • 10:$2.8810
      • 1:$3.1900
      NGTB40N65IHRTG
      DISTI # 31AC6710      		ON SemiconductorTRANSISTOR, IGBT, 650V, 80A, TO-3P,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:405W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-3P,No. of Pins:3Pins,RoHS Compliant: Yes0
        NGTB40N65IHRTG
        DISTI # 863-NGTB40N65IHRTG        		ON SemiconductorIGBT Transistors 650V/40A MONOLITHIC RC IG
        RoHS: Compliant        		96
        • 1:$2.8800
        • 10:$2.4500
        • 100:$1.9600
        • 500:$1.7100
        • 1000:$1.4200
        • 2500:$1.3200
        • 5000:$1.2700
        NGTB40N65IHRTG
        DISTI # 1718330        		ON SemiconductorIGBT MONOLITHIC REVERSE CONDUCTING DIODE, TU130
        • 60:£0.9900
        • 30:£1.0610
        NGTB40N65IHRTG
        DISTI # 2775437        		ON SemiconductorTRANSISTOR, IGBT, 650V, 80A, TO-3P
        RoHS: Compliant        		0
        • 1000:$2.1900
        • 500:$2.4200
        • 250:$2.7600
        • 100:$3.0600
        • 10:$3.5300
        • 1:$4.0500
        NGTB40N65IHRTGON Semiconductor650V,40A,IGBT Monolithic with Reverse Conducting Diode10050
        • 1:$2.5400
        • 100:$1.9100
        • 500:$1.6300
        • 1000:$1.5300
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        		 Res Metal Strip 2512 0.003 Ohm 1% 3W ±70ppm/C Sulfur Resistant Pad SMD Automotive T/R
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        Disponibilidad
        Valores:
        72
        En orden:
        2055
        Ingrese la cantidad:
        El precio actual de NGTB40N65IHRTG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        2,88 US$
        2,88 US$
        10
        2,45 US$
        24,50 US$
        100
        1,96 US$
        196,00 US$
        500
        1,71 US$
        855,00 US$
        1000
        1,42 US$
        1 420,00 US$
        2500
        1,32 US$
        3 300,00 US$
        5000
        1,27 US$
        6 350,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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