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SIB411DK-T1-GE3

SIB411DK-T1-GE3
Mfr. #:
SIB411DK-T1-GE3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 20V 9.0A 13W
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIB411DK-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIB411DK-T1-GE3 DatasheetSIB411DK-T1-GE3 Datasheet (P4-P6)SIB411DK-T1-GE3 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SIB41, SIB4, SIB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 20V 4.8A 6-Pin PowerPAK SC-75 T/R
***ark
P CHANNEL MOSFET, -20V, 9A, SC-75, FULL REEL
***i-Key
MOSFET P-CH 20V 9A PPAK SC75-6L
***nell
MOSFET, P, PPAK SC-75; Transistor Polarity:P Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.4W; Transistor Case Style:SC-75; No. of Pins:6Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; Current Id Max:-9A; Junction Temperature Tj Max:150°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Rise Time:40ns; Termination Type:Surface Mount Device; Voltage Vds Typ:20V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1V; Voltage Vgs th Min:0.4V
Parte # Mfg. Descripción Valores Precio
SIB411DK-T1-GE3
DISTI # SIB411DK-T1-GE3-ND		Vishay SiliconixMOSFET P-CH 20V 9A PPAK SC75-6L
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIB411DK-T1-GE3
    DISTI # 781-SIB411DK-GE3    		Vishay IntertechnologiesMOSFET 20V 9.0A 13W
    RoHS: Compliant    		0
      SIB411DK-T1-GE3Vishay Intertechnologies 2820
        Imagen Parte # Descripción
        SIB411DK-T1-E3

        Mfr.#: SIB411DK-T1-E3

        OMO.#: OMO-SIB411DK-T1-E3

        		 MOSFET RECOMMENDED ALT 78-SIB441EDK-T1-GE3
        SIB411DK-T1-GE3

        Mfr.#: SIB411DK-T1-GE3

        OMO.#: OMO-SIB411DK-T1-GE3-VISHAY

        		 IGBT Transistors MOSFET 20V 9.0A 13W
        SIB411DK-T1-E3

        Mfr.#: SIB411DK-T1-E3

        OMO.#: OMO-SIB411DK-T1-E3-VISHAY

        		 MOSFET P-CH 20V 9A SC75-6
        Disponibilidad
        Valores:
        Available
        En orden:
        3000
        Ingrese la cantidad:
        El precio actual de SIB411DK-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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