IPP65R110CFD

IPP65R110CFD
Mfr. #:
IPP65R110CFD
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP65R110CFD Ficha de datos
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Más información:
IPP65R110CFD más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
CoolMOS CFD2
embalaje
Tubo
Alias ​​de parte
IPP65R110CFDXK IPP65R110CFDXKSA1 SP000895226
Unidad de peso
0.211644 oz
Estilo de montaje
A través del orificio
Nombre comercial
CoolMOS
Paquete-Estuche
TO-220-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
277.8 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
6 ns
Hora de levantarse
11 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
31.2 A
Vds-Drain-Source-Breakdown-Voltage
700 V
Resistencia a la fuente de desagüe de Rds
110 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
68 nS
Qg-Gate-Charge
118 nC
Tags
IPP65R11, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPP65R110CFDXKSA1
DISTI # IPP65R110CFDXKSA1-ND
Infineon Technologies AGMOSFET N-CH 700V 31.2A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
1000In Stock
  • 1000:$3.3064
  • 500:$3.9204
  • 100:$4.8415
  • 10:$5.9040
  • 1:$6.6100
IPP65R110CFDXKSA1
DISTI # SP000895226
Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin TO-220 Tube (Alt: SP000895226)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 100
  • 1:€3.1900
  • 10:€2.8900
  • 25:€2.7900
  • 50:€2.6900
  • 100:€2.5900
  • 500:€2.4900
  • 1000:€2.2900
IPP65R110CFDXKSA1
DISTI # IPP65R110CFDXKSA1
Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R110CFDXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$2.9900
  • 1000:$2.8900
  • 2000:$2.7900
  • 3000:$2.6900
  • 5000:$2.6900
IPP65R110CFDXKSA1
DISTI # 13AC9085
Infineon Technologies AGMOSFET, N-CH, 650V, 31.2A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:31.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.099ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes460
  • 500:$4.3300
  • 250:$4.6700
  • 100:$5.2500
  • 50:$5.6000
  • 25:$5.9600
  • 10:$6.3100
  • 1:$7.0200
IPP65R110CFD
DISTI # 726-IPP65R110CFD
Infineon Technologies AGMOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2
RoHS: Compliant
0
  • 1:$5.6800
  • 10:$4.8300
  • 100:$4.1800
  • 250:$3.9700
  • 500:$3.5600
IPP65R110CFDXKSA1
DISTI # 2726071
Infineon Technologies AGMOSFET, N-CH, 650V, 31.2A, TO-220-3
RoHS: Compliant
457
  • 1000:$4.9100
  • 500:$5.8300
  • 100:$7.1900
  • 10:$8.7700
  • 1:$9.8200
IPP65R110CFDXKSA1
DISTI # 2726071
Infineon Technologies AGMOSFET, N-CH, 650V, 31.2A, TO-220-3
RoHS: Compliant
457
  • 100:£4.3300
  • 10:£5.2800
  • 1:£6.5100
Imagen Parte # Descripción
IPP65R150CFDAAKSA1

Mfr.#: IPP65R150CFDAAKSA1

OMO.#: OMO-IPP65R150CFDAAKSA1

MOSFET N-Ch 650V 22.4A TO220-3
IPP65R310CFDAAKSA1

Mfr.#: IPP65R310CFDAAKSA1

OMO.#: OMO-IPP65R310CFDAAKSA1

MOSFET N-Ch 650V 11.4A TO220-3
IPP65R280C6XKSA1

Mfr.#: IPP65R280C6XKSA1

OMO.#: OMO-IPP65R280C6XKSA1

MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6
IPP65R280E6XKSA1

Mfr.#: IPP65R280E6XKSA1

OMO.#: OMO-IPP65R280E6XKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V 13.8A TO220
IPP65R110CFDXKSA1

Mfr.#: IPP65R110CFDXKSA1

OMO.#: OMO-IPP65R110CFDXKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 700V 31.2A TO220
IPP65R310CFDAXK

Mfr.#: IPP65R310CFDAXK

OMO.#: OMO-IPP65R310CFDAXK-1190

Trans MOSFET N-CH 650V 11.4A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IPP65R310CFDAAKSA1)
IPP65R225C7

Mfr.#: IPP65R225C7

OMO.#: OMO-IPP65R225C7-1190

Trans MOSFET N-CH 650V 11A
IPP65R310CFD , 2SJ144-BL

Mfr.#: IPP65R310CFD , 2SJ144-BL

OMO.#: OMO-IPP65R310CFD-2SJ144-BL-1190

Nuevo y original
IPP65R660CFD,65F660

Mfr.#: IPP65R660CFD,65F660

OMO.#: OMO-IPP65R660CFD-65F660-1190

Nuevo y original
IPP65R110CFD

Mfr.#: IPP65R110CFD

OMO.#: OMO-IPP65R110CFD-317

RF Bipolar Transistors MOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de IPP65R110CFD es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,34 US$
5,34 US$
10
5,07 US$
50,73 US$
100
4,81 US$
480,60 US$
500
4,54 US$
2 269,50 US$
1000
4,27 US$
4 272,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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