RF1S25N06SM

RF1S25N06SM
Mfr. #:
RF1S25N06SM
Fabricante:
Rochester Electronics, LLC
Descripción:
Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RF1S25N06SM Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
RF1S25N06SM, RF1S25N06S, RF1S25, RF1S2, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***pNet
25A ,60V, 0.047ohm, N-CH Si, PMOS TO-263AB
Parte # Mfg. Descripción Valores Precio
RF1S25N06SMHarris SemiconductorPower Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
3005
  • 1000:$0.5900
  • 500:$0.6200
  • 100:$0.6500
  • 25:$0.6800
  • 1:$0.7300
RF1S25N06SM9AHarris SemiconductorPower Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Not Compliant
4000
  • 1000:$0.6200
  • 500:$0.6500
  • 100:$0.6800
  • 25:$0.7100
  • 1:$0.7600
RF1S25N06SMR4643Harris Semiconductor 
RoHS: Not Compliant
3200
  • 1000:$0.5900
  • 500:$0.6200
  • 100:$0.6500
  • 25:$0.6800
  • 1:$0.7300
Imagen Parte # Descripción
RF1S22N10SM

Mfr.#: RF1S22N10SM

OMO.#: OMO-RF1S22N10SM-1190

Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S22N10SM9A

Mfr.#: RF1S22N10SM9A

OMO.#: OMO-RF1S22N10SM9A-1190

MOSFET 100V Single
RF1S23N06LE

Mfr.#: RF1S23N06LE

OMO.#: OMO-RF1S23N06LE-1190

Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RF1S23N06LESM

Mfr.#: RF1S23N06LESM

OMO.#: OMO-RF1S23N06LESM-1190

Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S25N06

Mfr.#: RF1S25N06

OMO.#: OMO-RF1S25N06-1190

- Bulk (Alt: RF1S25N06)
RF1S25N06S3S

Mfr.#: RF1S25N06S3S

OMO.#: OMO-RF1S25N06S3S-1190

Nuevo y original
RF1S25N06SM

Mfr.#: RF1S25N06SM

OMO.#: OMO-RF1S25N06SM-1190

Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S25N06SM9A

Mfr.#: RF1S25N06SM9A

OMO.#: OMO-RF1S25N06SM9A-1190

Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RF1S25N06SMR4643

Mfr.#: RF1S25N06SMR4643

OMO.#: OMO-RF1S25N06SMR4643-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de RF1S25N06SM es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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