IPP60R070CFD7XKSA1

IPP60R070CFD7XKSA1
Mfr. #:
IPP60R070CFD7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP60R070CFD7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPP60R070CFD7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
31 A
Rds On - Resistencia de la fuente de drenaje:
57 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
67 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
156 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Serie:
CoolMOS CFD7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
23 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
99 ns
Tiempo típico de retardo de encendido:
26 ns
Parte # Alias:
IPP60R070CFD7 SP001617976
Tags
IPP60R07, IPP60R0, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 220-3
***ark
Mosfet, N-Ch, 600V, 31A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.057Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPP60R070CFD7XKSA1
DISTI # V36:1790_18787590
Infineon Technologies AGIPP60R070CFD7XKSA10
    IPP60R070CFD7XKSA1
    DISTI # IPP60R070CFD7XKSA1-ND
    Infineon Technologies AGMOSFET N-CH TO220-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    362In Stock
    • 1000:$3.9398
    • 500:$4.5235
    • 100:$5.3991
    • 10:$6.5660
    • 1:$7.3000
    IPP60R070CFD7XKSA1
    DISTI # IPP60R070CFD7XKSA1
    Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 220-3 - Rail/Tube (Alt: IPP60R070CFD7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube
    Americas - 0
    • 500:$3.7900
    • 1000:$3.5900
    • 2000:$3.4900
    • 3000:$3.3900
    • 5000:$3.2900
    IPP60R070CFD7XKSA1
    DISTI # SP001617976
    Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 70mΩ 156W 600V PG-TO 220-3 (Alt: SP001617976)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1:€3.9900
    • 10:€3.5900
    • 25:€3.4900
    • 50:€3.2900
    • 100:€3.1900
    • 500:€3.0900
    • 1000:€2.8900
    IPP60R070CFD7XKSA1
    DISTI # 43AC9326
    Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.057ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes318
    • 500:$4.1100
    • 250:$4.5100
    • 100:$4.7200
    • 50:$5.0800
    • 25:$5.4300
    • 10:$5.7000
    • 1:$6.3100
    IPP60R070CFD7XKSA1
    DISTI # 726-IPP60R070CFD7XKS
    Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant
    0
    • 1:$6.3100
    • 10:$5.7000
    • 25:$5.4300
    • 100:$4.7200
    • 250:$4.5100
    • 500:$4.1100
    IPP60R070CFD7XKSA1
    DISTI # 2807982
    Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-220
    RoHS: Compliant
    318
    • 1000:$5.6600
    • 500:$5.9500
    • 250:$6.2700
    • 100:$6.6300
    • 10:$7.5000
    • 1:$8.0200
    IPP60R070CFD7XKSA1
    DISTI # 2807982
    Infineon Technologies AGMOSFET, N-CH, 600V, 31A, TO-220
    RoHS: Compliant
    320
    • 500:£3.2800
    • 250:£3.6000
    • 100:£3.7700
    • 10:£4.3400
    • 1:£5.5500
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    Switching Voltage Regulators DC/DC CONVRTR 36VIN, 1V-18V, 2A, QFN
    ADUM1100BRZ

    Mfr.#: ADUM1100BRZ

    OMO.#: OMO-ADUM1100BRZ

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    Mfr.#: FCP125N65S3R0

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    6-V, 0.5-A Step-Down DC/DC Power Module
    LMZM23600V5SILT

    Mfr.#: LMZM23600V5SILT

    OMO.#: OMO-LMZM23600V5SILT-TEXAS-INSTRUMENTS

    6-V, 0.5-A Step-Down DC/DC Power Module
    IPP60R060P7XKSA1

    Mfr.#: IPP60R060P7XKSA1

    OMO.#: OMO-IPP60R060P7XKSA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 600V 48A TO220-3
    ADUM1100BRZ

    Mfr.#: ADUM1100BRZ

    OMO.#: OMO-ADUM1100BRZ-ANALOG-DEVICES-INC-ADI

    Digital Isolators Digital SGL CH
    BMOD0002 P005 B02

    Mfr.#: BMOD0002 P005 B02

    OMO.#: OMO-BMOD0002-P005-B02-MAXWELL-TECHNOLOGIES

    CAP 2.5F -10% +20% 5V T/H
    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de IPP60R070CFD7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    6,31 US$
    6,31 US$
    10
    5,70 US$
    57,00 US$
    25
    5,43 US$
    135,75 US$
    100
    4,72 US$
    472,00 US$
    250
    4,51 US$
    1 127,50 US$
    500
    4,11 US$
    2 055,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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