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IPL65R099C7AUMA1

IPL65R099C7AUMA1
Mfr. #:
IPL65R099C7AUMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER BEST IN CLASS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPL65R099C7AUMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPL65R099C7AUMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
VSON-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
21 A
Rds On - Resistencia de la fuente de drenaje:
99 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
45 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
128 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
8 mm
Serie:
CoolMOS C7
Tipo de transistor:
1 N-Channel
Ancho:
8 mm
Marca:
Infineon Technologies
Otoño:
12 ns
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Hora de levantarse:
5 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
89 ns
Tiempo típico de retardo de encendido:
11 ns
Parte # Alias:
IPL65R099C7 SP001032722
Tags
IPL65R0, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 99 mOhm 45 nC CoolMOS™ Power Mosfet - PG-VSON-4
***ical
Trans MOSFET N-CH 650V 21A 4-Pin VSON EP T/R
***et Europe
Trans MOSFET N-CH 700V 21A 5-Pin VSON T/R
***p One Stop Global
650V CoolMOS C7 Power Transistor
***ronik
N-CH 650V 21A 88mOhm ThinPAK8x8
***i-Key
MOSFET N-CH 4VSON
***ark
Mosfet, N-Ch, 650V, 21A, 128W, Vson; Transistor Polarity:n Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.088Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 21A, 128W, VSON; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.088ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:128W; Transistor Case Style:VSON; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:CoolMOS C7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 650V, 21A, 128W, VSON; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:21A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.088ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3.5V; Straty mocy Pd:128W; Rodzaj obudowy tranzystora:VSON; Liczba pinów:4piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:CoolMOS C7 Series; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)
***ineon
Infineons new CoolMOS C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPL65R099C7AUMA1
DISTI # V36:1790_06377357		Infineon Technologies AGTrans MOSFET N-CH 650V 21A 4-Pin VSON EP T/R
RoHS: Compliant		0
    IPL65R099C7AUMA1
    DISTI # V72:2272_06377357    		Infineon Technologies AGTrans MOSFET N-CH 650V 21A 4-Pin VSON EP T/R
    RoHS: Compliant    		0
      IPL65R099C7AUMA1
      DISTI # IPL65R099C7AUMA1-ND      		Infineon Technologies AGMOSFET N-CH 4VSON
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$3.1174
      IPL65R099C7AUMA1
      DISTI # IPL65R099C7AUMA1      		Infineon Technologies AGTrans MOSFET N-CH 700V 21A 5-Pin VSON T/R - Tape and Reel (Alt: IPL65R099C7AUMA1)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 18000:$2.6900
      • 30000:$2.6900
      • 12000:$2.7900
      • 6000:$2.8900
      • 3000:$2.9900
      IPL65R099C7AUMA1
      DISTI # IPL65R099C7AUMA1      		Infineon Technologies AGTrans MOSFET N-CH 700V 21A 5-Pin VSON T/R - Bulk (Alt: IPL65R099C7AUMA1)
      RoHS: Compliant
      Min Qty: 129
      Container: Bulk      		Americas - 0
      • 1290:$2.3900
      • 645:$2.4900
      • 387:$2.5900
      • 258:$2.6900
      • 129:$2.7900
      IPL65R099C7AUMA1
      DISTI # SP001032722      		Infineon Technologies AGTrans MOSFET N-CH 700V 21A 5-Pin VSON T/R (Alt: SP001032722)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
      • 30000:€2.2900
      • 18000:€2.4900
      • 12000:€2.6900
      • 6000:€2.7900
      • 3000:€2.8900
      IPL65R099C7AUMA1
      DISTI # 84AC6838      		Infineon Technologies AGMOSFET, N-CH, 650V, 21A, 128W, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.088ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2367
      • 1000:$3.0100
      • 500:$3.5700
      • 250:$3.9800
      • 100:$4.1900
      • 50:$4.4100
      • 25:$4.6200
      • 10:$4.8400
      • 1:$5.7000
      IPL65R099C7AUMA1
      DISTI # 726-IPL65R099C7AUMA1      		Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS2543
      • 1:$5.6400
      • 10:$4.7900
      • 100:$4.1500
      • 250:$3.9400
      • 500:$3.5300
      • 1000:$2.9800
      • 3000:$2.8300
      IPL65R099C7
      DISTI # 726-IPL65R099C7      		Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS
      RoHS: Compliant      		0
      • 1:$5.6400
      • 10:$4.7900
      • 100:$4.1500
      • 250:$3.9400
      • 500:$3.5300
      • 1000:$2.9800
      • 3000:$2.8300
      IPL65R099C7AUMA1Infineon Technologies AG 
      RoHS: Not Compliant      		3000
      • 1000:$2.5700
      • 500:$2.7000
      • 100:$2.8100
      • 25:$2.9300
      • 1:$3.1600
      IPL65R099C7AUMA1
      DISTI # 2983368      		Infineon Technologies AGMOSFET, N-CH, 650V, 21A, 128W, VSON
      RoHS: Compliant      		2367
      • 250:$4.1600
      • 100:$4.6800
      • 25:$5.3500
      • 1:$6.2300
      IPL65R099C7AUMA1
      DISTI # 2983368      		Infineon Technologies AGMOSFET, N-CH, 650V, 21A, 128W, VSON2367
      • 100:£3.5300
      • 10:£4.0800
      • 1:£5.3300
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      Disponibilidad
      Valores:
      Available
      En orden:
      1985
      Ingrese la cantidad:
      El precio actual de IPL65R099C7AUMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      5,64 US$
      5,64 US$
      10
      4,79 US$
      47,90 US$
      100
      4,15 US$
      415,00 US$
      250
      3,94 US$
      985,00 US$
      500
      3,53 US$
      1 765,00 US$
      1000
      2,98 US$
      2 980,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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