CGHV59350F

CGHV59350F
Mfr. #:
CGHV59350F
Fabricante:
N/A
Descripción:
RF JFET Transistors 5.2-5.9GHz 350 Watt Gain typ. 10.5dB GaN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CGHV59350F Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CGHV59350F más información
Atributo del producto
Valor de atributo
Fabricante
Velocidad de lobo / Cree
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Bandeja
Estilo de montaje
SMD / SMT
Rango de temperatura de funcionamiento
- 40 C to + 85 C
Tipo transistor
HEMT
Ganar
11 dB
Potencia de salida
450 W
Temperatura máxima de funcionamiento
+ 85 C
Temperatura mínima de funcionamiento
- 40 C
Frecuencia de operación
5900 MHz
Vds-Drain-Source-Breakdown-Voltage
125 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Vgs-Gate-Source-Breakdown-Voltage
- 10 V 2 V
Tags
CGHV59, CGHV5, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 50V 440217
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Parte # Mfg. Descripción Valores Precio
CGHV59350F
DISTI # CGHV59350F-ND
WolfspeedRF MOSFET HEMT 50V 440217
RoHS: Compliant
Min Qty: 1
Container: Tray
2In Stock
  • 1:$1,249.2800
CGHV59350F-TB
DISTI # CGHV59350F-TB-ND
WolfspeedTEST FIXTURE FOR CGHV59350F
RoHS: Compliant
Min Qty: 1
Container: Bulk
1In Stock
  • 1:$550.0000
CGHV59350F
DISTI # 941-CGHV59350F
Cree, Inc.RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt
RoHS: Compliant
11
  • 1:$1,249.2700
CGHV59350F-TB
DISTI # 941-CGHV59350F-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Compliant
8
  • 1:$550.0000
CGHV59350F
DISTI # CGHV59350F
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$1,249.2700
CGHV59350F-TB
DISTI # CGHV59350F-TB
WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant
1
  • 1:$550.0000
Imagen Parte # Descripción
CGHV59070F

Mfr.#: CGHV59070F

OMO.#: OMO-CGHV59070F

RF JFET Transistors GaN HEMT 4.4-5.9GHz, 70 Watt
CGHV59350F

Mfr.#: CGHV59350F

OMO.#: OMO-CGHV59350F

RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt
CGHV50200F-AMP

Mfr.#: CGHV50200F-AMP

OMO.#: OMO-CGHV50200F-AMP

RF Development Tools Test Board with GaN HEMT
CGHV50200F

Mfr.#: CGHV50200F

OMO.#: OMO-CGHV50200F-WOLFSPEED

RF MOSFET HEMT 40V 440217
CGHV59070F

Mfr.#: CGHV59070F

OMO.#: OMO-CGHV59070F-WOLFSPEED

RF MOSFET HEMT 50V 440224
CGHV59070F-TB

Mfr.#: CGHV59070F-TB

OMO.#: OMO-CGHV59070F-TB-WOLFSPEED

TEST FIXTURE FOR CGHV59070F
CGHV59350F-TB

Mfr.#: CGHV59350F-TB

OMO.#: OMO-CGHV59350F-TB-WOLFSPEED

TEST FIXTURE FOR CGHV59350F
CGHV50200F-AMP

Mfr.#: CGHV50200F-AMP

OMO.#: OMO-CGHV50200F-AMP-WOLFSPEED

EVAL BOARD FOR CGHV50200
CGHV59070F-AMP

Mfr.#: CGHV59070F-AMP

OMO.#: OMO-CGHV59070F-AMP-WOLFSPEED

EVAL BOARD WITH CGHV59070F
CGHV59350F

Mfr.#: CGHV59350F

OMO.#: OMO-CGHV59350F-WOLFSPEED

RF JFET Transistors 5.2-5.9GHz 350 Watt Gain typ. 10.5dB GaN
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de CGHV59350F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,00 US$
1,00 US$
10
1,00 US$
10,00 US$
100
1,00 US$
100,00 US$
500
1,00 US$
500,00 US$
1000
1,00 US$
1 000,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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