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BSC031N06NS3 G

BSC031N06NS3 G
Mfr. #:
BSC031N06NS3 G
Fabricante:
Infineon Technologies
Descripción:
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC031N06NS3 G Ficha de datos
Entrega:
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ECAD Model:
Más información:
BSC031N06NS3 G más información
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
FET - Single
Serie
OptiMOS 3
embalaje
Carrete
Alias ​​de parte
BSC031N06NS3GATMA1 BSC031N06NS3GXT SP000451482
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
2.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
16 ns
Hora de levantarse
161 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
100 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Resistencia a la fuente de desagüe de Rds
3.1 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
63 ns
Tiempo de retardo de encendido típico
38 ns
Modo de canal
Mejora
Tags
BSC031N06NS3G, BSC031, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descripción Valores Precio
BSC031N06NS3 G
DISTI # 30610688		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		9995
  • 200:$1.2648
  • 100:$1.4280
  • 50:$1.6958
  • 10:$2.0655
  • 7:$4.0545
BSC031N06NS3GATMA1
DISTI # BSC031N06NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.9743
BSC031N06NS3GATMA1
DISTI # BSC031N06NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.1193
  • 500:$1.3508
  • 100:$1.7368
  • 10:$2.1610
  • 1:$2.3900
BSC031N06NS3GATMA1
DISTI # BSC031N06NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.1193
  • 500:$1.3508
  • 100:$1.7368
  • 10:$2.1610
  • 1:$2.3900
BSC031N06NS3 G
DISTI # C1S322000192300		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		9295
  • 2000:$0.8730
  • 200:$0.9920
  • 100:$1.1200
  • 50:$1.3300
  • 10:$1.6200
  • 1:$3.1800
BSC031N06NS3GXT
DISTI # BSC031N06NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC031N06NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.7849
  • 10000:$0.7559
  • 20000:$0.7289
  • 30000:$0.7049
  • 50000:$0.6919
BSC031N06NS3GATMA1
DISTI # 85X4151		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 139W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$2.0100
  • 10:$1.7100
  • 25:$1.6000
  • 50:$1.4800
  • 100:$1.3700
  • 250:$1.2900
  • 500:$1.2000
  • 1000:$0.9880
BSC031N06NS3 G
DISTI # 726-BSC031N06NS3G		Infineon Technologies AGMOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$2.0100
  • 10:$1.7100
  • 100:$1.3700
  • 500:$1.2000
  • 1000:$0.9880
BSC031N06NS3GATMA1
DISTI # 7545257P		Infineon Technologies AGMOSFET N-CHANNEL 60V 100A TDSON8, RL1
  • 50:£1.1250
  • 250:£0.8500
  • 1250:£0.6500
  • 2500:£0.6100
BSC031N06NS3GInfineon Technologies AGPower Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		Europe - 2510
    BSC031N06NS3GInfineon Technologies AG 1181
      BSC031N06NS3GATMA1
      DISTI # 2443369      		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
      RoHS: Compliant      		0
      • 1:$3.1900
      • 10:$2.7100
      • 100:$2.1700
      • 500:$1.9100
      • 1000:$1.7500
      BSC031N06NS3GATMA1
      DISTI # 2443369RL      		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
      RoHS: Compliant      		0
      • 1:$3.1900
      • 10:$2.7100
      • 100:$2.1700
      • 500:$1.9100
      • 1000:$1.7500
      BSC031N06NS3GATMA1
      DISTI # 2443369      		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
      RoHS: Compliant      		90
      • 1:£1.1300
      • 10:£0.8960
      • 100:£0.7710
      BSC031N06NS3GInfineon Technologies AG60V,100A,N Channel Power MOSFET205
      • 1:$1.4300
      • 100:$1.1900
      • 500:$1.0500
      • 1000:$1.0200
      Imagen Parte # Descripción
      BSC031N06NS3 G

      Mfr.#: BSC031N06NS3 G

      OMO.#: OMO-BSC031N06NS3-G

      		 MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
      BSC031N06NS3

      Mfr.#: BSC031N06NS3

      OMO.#: OMO-BSC031N06NS3-1190

      		 Nuevo y original
      BSC031N06NS3 G

      Mfr.#: BSC031N06NS3 G

      OMO.#: OMO-BSC031N06NS3-G-1190

      		 Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
      BSC031N06NS3G

      Mfr.#: BSC031N06NS3G

      OMO.#: OMO-BSC031N06NS3G-1190

      		 Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      BSC031N06NS3GATMA1

      Mfr.#: BSC031N06NS3GATMA1

      OMO.#: OMO-BSC031N06NS3GATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 60V 100A TDSON-8
      BSC031N06NS3GATMA1 , TDA

      Mfr.#: BSC031N06NS3GATMA1 , TDA

      OMO.#: OMO-BSC031N06NS3GATMA1-TDA-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de BSC031N06NS3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,30 US$
      1,30 US$
      10
      1,24 US$
      12,37 US$
      100
      1,17 US$
      117,18 US$
      500
      1,11 US$
      553,35 US$
      1000
      1,04 US$
      1 041,60 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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