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IRG4PH40UDPBF

IRG4PH40UDPBF
Mfr. #:
IRG4PH40UDPBF
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors 1200V UltraFast 5-40kHz
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRG4PH40UDPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4PH40UDPBF DatasheetIRG4PH40UDPBF Datasheet (P4-P6)IRG4PH40UDPBF Datasheet (P7-P9)IRG4PH40UDPBF Datasheet (P10)
ECAD Model:
Más información:
IRG4PH40UDPBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1.2 kV
Voltaje de saturación colector-emisor:
2.43 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
41 A
Pd - Disipación de energía:
160 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
41 A
Altura:
20.7 mm
Longitud:
15.87 mm
Ancho:
5.31 mm
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
400
Subcategoría:
IGBT
Parte # Alias:
SP001537144
Unidad de peso:
1.340411 oz
Tags
IRG4PH40UD, IRG4PH40U, IRG4PH4, IRG4PH, IRG4P, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC Tube
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:41A; Collector Emitter Saturation Voltage, Vce(sat):3.1V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40UD; Fall Time Max:150ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:59ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***p One Stop Global
Trans IGBT Chip N-CH 1200V 30A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***ure Electronics
IRG4PH40KDPBF Series 1200 V 15 A N-Channel UltraFast IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.74 V Current release time: 220 ns Power dissipation: 160 W
***ment14 APAC
SINGLE IGBT, 1.2KV, 30A; Transistor Type; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:3.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Fall Time Max:330ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:60A; Rise Time:31ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ineon SCT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***ure Electronics
IRG4PH40K Series 1200 V 15 A Through Hole UltraFast IGBT - TO-247AC
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.74V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40KPBF; Fall Time Max:230ns; Fall Time tf:230ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Pulsed Current Icm:60A; Rise Time:22ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 15A, Field Stop Trench
***ark
RAIL/1200V 15A FS2 Trench IGBT
***el Electronic
IC REG LINEAR 24V 500MA TO252-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***ical
Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 25A Field Stop Trench
***ark
RAIL/1200V 25A FS2 Trench IGBT
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***ical
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247AC
***ernational Rectifier
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***(Formerly Allied Electronics)
MOSFET; 1200V; 30.000A; COPAK-247
***ment14 APAC
IGBT,N CH,1200V,30A,TO-247AC; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:180W
***ure Electronics
IXDH20N120D1 Series 1200 V 38 A N-Channel High Voltage IGBT - TO-247AD
***ical
Trans IGBT Chip N-CH 1200V 38A 200000mW 3-Pin(3+Tab) TO-247AD
***trelec
IGBT Housing type: TO-247AD Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.4 V Current release time: 70 ns Power dissipation: 200 W
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Parte # Mfg. Descripción Valores Precio
IRG4PH40UDPBF
DISTI # V99:2348_13891837		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		400
  • 1:$3.4745
IRG4PH40UDPBF
DISTI # IRG4PH40UDPBF-ND		Infineon Technologies AGIGBT 1200V 41A 160W TO247AC
RoHS: Compliant
Min Qty: 1
Container: Bag		1790In Stock
  • 1000:$3.4932
  • 500:$4.1419
  • 100:$4.8655
  • 10:$5.9380
  • 1:$6.6100
IRG4PH40UDPBF
DISTI # 29570040		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		774
  • 500:$2.7189
  • 250:$2.7934
  • 100:$2.8721
  • 50:$2.9554
  • 25:$3.0436
  • 4:$3.1372
IRG4PH40UDPBF
DISTI # 32372550		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		400
  • 2:$3.4745
IRG4PH40UDPBF
DISTI # SP001537144		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC (Alt: SP001537144)
RoHS: Compliant
Min Qty: 1		Europe - 350
  • 1:€3.2900
  • 10:€2.9900
  • 25:€2.8900
  • 50:€2.7900
  • 100:€2.6900
  • 500:€2.5900
  • 1000:€2.3900
IRG4PH40UDPBF
DISTI # IRG4PH40UDPBF		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 41A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PH40UDPBF)
RoHS: Compliant
Min Qty: 400
Container: Tube		Americas - 0
  • 400:$3.1900
  • 800:$3.0900
  • 1600:$2.9900
  • 2400:$2.8900
  • 4000:$2.8900
IRG4PH40UDPBF
DISTI # 63J7547		Infineon Technologies AGSINGLE IGBT, 1.2KV, 41A,DC Collector Current:41A,Collector Emitter Saturation Voltage Vce(on):2.43V,Power Dissipation Pd:160W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes89
  • 500:$4.3300
  • 250:$4.8300
  • 100:$5.0900
  • 50:$5.3600
  • 25:$5.6100
  • 10:$5.8700
  • 1:$6.9200
IRG4PH40UDPBF
DISTI # 70017610		Infineon Technologies AG1200V ULTRAFAST 5-40 KHZ COPACK IGBT INA TO-247AC PACKAGE
RoHS: Compliant		174
  • 1:$8.6000
  • 10:$7.5900
  • 100:$6.6200
  • 500:$5.7300
  • 1000:$5.0600
IRG4PH40UDPBF
DISTI # 942-IRG4PH40UDPBF		Infineon Technologies AGIGBT Transistors 1200V UltraFast 5-40kHz
RoHS: Compliant		368
  • 1:$6.2900
  • 10:$5.3400
  • 100:$4.6300
  • 250:$4.3900
  • 500:$3.9400
  • 1000:$3.3200
  • 2500:$3.1600
IRG4PH40UDPBF
DISTI # 8640959P		Infineon Technologies AGIGBT 1200V 41A ULTRAFAST DIODE TO-247AC, TU198
  • 1000:£2.5750
  • 500:£3.1200
  • 250:£3.2600
  • 50:£3.5150
IRG4PH40UDPBF
DISTI # 8640959		Infineon Technologies AGIGBT 1200V 41A ULTRAFAST DIODE TO-247AC, PK28
  • 1000:£2.5750
  • 500:£3.1200
  • 250:£3.2600
  • 50:£3.5150
  • 2:£4.2800
IRG4PH40UDPBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 ***72
  • 23:$10.4340
  • 7:$11.2800
  • 1:$12.6900
IRG4PH40UDPBF
DISTI # IRG4PH40UDPBF		Infineon Technologies AGTransistor: IGBT,1200V,41A,160W,TO247-3185
  • 1:$4.9800
  • 3:$4.4600
  • 10:$3.7000
  • 50:$3.2700
IRG4PH40UDPBF
DISTI # IRG4PH40UDPBF		Infineon Technologies AG1200V 41A 160W TO247AC
RoHS: Compliant		120
  • 5:€4.4800
  • 25:€3.4800
  • 100:€2.9800
  • 200:€2.7300
IRG4PH40UDPBF
DISTI # XSKDRABV0033184		Infineon Technologies AGInsulated Gate Bipolar Transistor, 55A I(C),600VV(BR)CES, N-Channel, TO-247AC
RoHS: Compliant		275 in Stock0 on Order
  • 275:$3.9500
  • 175:$4.2300
IRG4PH40UDPBF
DISTI # 8650683		Infineon Technologies AGIGBT, 1200V, 30A, TO-247AC
RoHS: Compliant		100
  • 250:$6.6300
  • 100:$6.9900
  • 10:$8.0600
  • 1:$9.4800
IRG4PH40UDPBF
DISTI # 8650683		Infineon Technologies AGIGBT, 1200V, 30A, TO-247AC
RoHS: Compliant		492
  • 500:£3.2000
  • 250:£3.3700
  • 100:£3.4800
  • 10:£3.5800
  • 1:£4.4200
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Disponibilidad
Valores:
200
En orden:
2183
Ingrese la cantidad:
El precio actual de IRG4PH40UDPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,29 US$
6,29 US$
10
5,34 US$
53,40 US$
100
4,63 US$
463,00 US$
250
4,39 US$
1 097,50 US$
500
3,94 US$
1 970,00 US$
1000
3,32 US$
3 320,00 US$
2500
3,16 US$
7 900,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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