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PD55025-E

PD55025-E
Mfr. #:
PD55025-E
Fabricante:
STMicroelectronics
Descripción:
RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PD55025-E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
PD55025-E más información PD55025-E Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Id - Corriente de drenaje continua:
7 A
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Ganar:
14.5 dB
Potencia de salida:
25 W
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerSO-10RF-Formed-4
Embalaje:
Tubo
Configuración:
Único
Altura:
3.5 mm
Longitud:
7.5 mm
Frecuencia de operación:
1 GHz
Serie:
PD55025-E
Escribe:
RF Power MOSFET
Ancho:
9.4 mm
Marca:
STMicroelectronics
Modo de canal:
Mejora
Sensible a la humedad:
Yes
Pd - Disipación de energía:
79 W
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
400
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
20 V
Unidad de peso:
0.105822 oz
Tags
PD55025, PD5502, PD550, PD55, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans RF MOSFET N-CH 40V 7A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube
***ure Electronics
PD55025-E Series 500 MHz 25 W 40 V N-Channel RF Power Transistor - POWERSO-10RF
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***icroelectronics
25W 12.5V 500MHz LDMOS in powerSO-10RF plastic package
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
Si4447ADY Series 40 V 7.2 A 45 mOhm Surface Mount P-Channel Mosfet - SOIC-8
***roFlash
Small Signal Field-Effect Transistor, 7.2A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:4.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
SI4909DY-T1-GE3 Dual P-channel MOSFET Transistor; 6.5 A; 40 V; 8-Pin SOIC
***et Europe
Transistor MOSFET Array Dual P-CH 40V 8A 8-Pin SOIC T/R
***enic
40V 8A 27m´Î@10V8A 3.2W 2.5V@250Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS
***roFlash
Small Signal Field-Effect Transistor, 8A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET, PP CH, W/D DIOD, 40V, 8A,SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:3.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, P Channel:-8A; Drain Source Voltage Vds, P Channel:-40V; Module Configuration:Dual; On Resistance Rds(on), P Channel:0.021ohm; Power Dissipation Pd:3.2W
***emi
P-Channel PowerTrench® MOSFET, -40V, -23A, 27mΩ
***ure Electronics
Single P-Channel 40 V 69 W 27 nC Silicon Surface Mount Mosfet - TO-252-3
*** Stop Electro
Power Field-Effect Transistor, 8.4A I(D), 40V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.
***ure Electronics
N-Channel 40 V 29 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET, 40V, 7.6A, 29mΩ
***Yang
Trans MOSFET N-CH 40V 7.6A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
These N-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 12 Milliohms;ID 9A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single N-Channel 40 V 17 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 40V 9A 8-Pin SOIC T/R / MOSFET N-CH 40V 9A 8-SOIC
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipati
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***emi
P-Channel PowerTrench® MOSFET, 40V, -8.2A, 27mΩ
*** Source Electronics
MOSFET P-CH 40V 8.2A 8SOIC / Trans MOSFET P-CH 40V 8.2A 8-Pin SOIC T/R
***rchild Semiconductor
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
***nell
MOSFET, P CH, 40V, 8.2A, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:1.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -8.2 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 50 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOIC / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.5
Parte # Mfg. Descripción Valores Precio
PD55025-E
DISTI # 29496935		STMicroelectronicsTrans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube
RoHS: Compliant		200
  • 250:$20.6592
  • 100:$21.6576
  • 50:$24.2208
PD55025-E
DISTI # 497-5301-5-ND		STMicroelectronicsFET RF 40V 500MHZ PWRSO10
RoHS: Compliant
Min Qty: 400
Container: Tube		Temporarily Out of Stock
  • 400:$21.5180
PD55025-E
DISTI # PD55025-E		STMicroelectronicsTrans MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube - Bag (Alt: PD55025-E)
RoHS: Compliant
Min Qty: 400
Container: Bag		Americas - 0
  • 400:$22.1900
  • 800:$21.1900
  • 1600:$20.1900
  • 2400:$19.2900
  • 4000:$18.8900
PD55025-E
DISTI # 511-PD55025-E		STMicroelectronicsRF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
RoHS: Compliant		384
  • 1:$28.6400
  • 5:$28.3500
  • 10:$26.4200
  • 25:$25.2300
  • 100:$22.5600
  • 250:$21.5200
PD55025TR-E
DISTI # 511-PD55025TR-E		STMicroelectronicsRF MOSFET Transistors RF Power Trans N-Channel
RoHS: Compliant		0
  • 1:$28.6400
  • 5:$28.3500
  • 10:$26.4200
  • 25:$25.2300
  • 100:$22.5600
  • 250:$21.5200
  • 600:$20.4900
PD55025-E
DISTI # PD55025-E		STMicroelectronicsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 400:$21.5400
  • 500:$20.3800
  • 1000:$19.3500
Imagen Parte # Descripción
IS61WV102416FBLL-10T2LI

Mfr.#: IS61WV102416FBLL-10T2LI

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 SRAM 16Mb,High-Speed,Async,1Mbx16, 10ns, 2.4v-3.6v, 54 Pin TSOP II, RoHS
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Mfr.#: PD55015-E

OMO.#: OMO-PD55015-E

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Mfr.#: PIC18F25Q10T-I/SS

OMO.#: OMO-PIC18F25Q10T-I-SS

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OMO.#: OMO-NCP4306AADZZZAMN1TBG

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Mfr.#: RFM-0505S

OMO.#: OMO-RFM-0505S-RECOM-POWER

 1W DC/DC-Converter 'ECONOLINE' SIP4 1kV unreg
PIC18F25Q10T-I/SS

Mfr.#: PIC18F25Q10T-I/SS

OMO.#: OMO-PIC18F25Q10T-I-SS-MICROCHIP-TECHNOLOGY

 IC MCU 8BIT 32KB FLASH 28SSOP
PD55015-E

Mfr.#: PD55015-E

OMO.#: OMO-PD55015-E-STMICROELECTRONICS

 FET RF 40V 500MHZ PWRSO-10
C0603C103K5RACAUTO7411

Mfr.#: C0603C103K5RACAUTO7411

OMO.#: OMO-C0603C103K5RACAUTO7411-1190

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.01uF 0603 X7R 10% AEC-Q200
NCP4306AADZZZAMN1TBG

Mfr.#: NCP4306AADZZZAMN1TBG

OMO.#: OMO-NCP4306AADZZZAMN1TBG-ON-SEMICONDUCTOR

 Secondary Side Synchronous Rectification Driver for High Efficiency SMPS Topologies
FTAS00-10.4AS-4A

Mfr.#: FTAS00-10.4AS-4A

OMO.#: OMO-FTAS00-10-4AS-4A-NKK-SWITCHES

 LCD Touch Panels TOUCH SCREEN, 4-WIRE, 10.4" DIAGONAL, GOLD TAIL
Disponibilidad
Valores:
111
En orden:
2094
Ingrese la cantidad:
El precio actual de PD55025-E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
28,64 US$
28,64 US$
5
28,35 US$
141,75 US$
10
26,42 US$
264,20 US$
25
25,23 US$
630,75 US$
100
22,56 US$
2 256,00 US$
250
21,52 US$
5 380,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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