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BSC098N10NS5ATMA1

BSC098N10NS5ATMA1
Mfr. #:
BSC098N10NS5ATMA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET Pwr transistor 100V OptiMOS 5
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC098N10NS5ATMA1 Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
BSC098N10NS5 SP001241598
Estilo de montaje
SMD / SMT
Paquete-Estuche
TDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Disipación de potencia Pd
69 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
4 ns
Hora de levantarse
5 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
60 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Resistencia a la fuente de desagüe de Rds
14 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
17 ns
Tiempo de retardo de encendido típico
10 ns
Qg-Gate-Charge
22 nC
Transconductancia directa-Mín.
28 S
Modo de canal
Mejora
Tags
BSC098N10NS5A, BSC098, BSC09, BSC0, BSC
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 9.8 mOhm 22 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
Mosfet, N-Ch, 100V, 60A, 150Deg C, 69W; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.0082Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
Parte # Mfg. Descripción Valores Precio
BSC098N10NS5ATMA1
DISTI # V72:2272_06383664		Infineon Technologies AGTrans MOSFET N-CH 100V 60A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		666
  • 500:$0.8203
  • 250:$0.8740
  • 100:$0.9342
  • 25:$1.0861
  • 10:$1.2067
  • 1:$1.5516
BSC098N10NS5ATMA1
DISTI # V36:1790_06383664		Infineon Technologies AGTrans MOSFET N-CH 100V 60A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		0
  • 10000:$0.5389
  • 5000:$0.5629
BSC098N10NS5ATMA1
DISTI # BSC098N10NS5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 60A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3824In Stock
  • 1000:$0.7435
  • 500:$0.9418
  • 100:$1.1401
  • 10:$1.4620
  • 1:$1.6400
BSC098N10NS5ATMA1
DISTI # BSC098N10NS5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 60A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3824In Stock
  • 1000:$0.7435
  • 500:$0.9418
  • 100:$1.1401
  • 10:$1.4620
  • 1:$1.6400
BSC098N10NS5ATMA1
DISTI # BSC098N10NS5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 60A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.6160
  • 5000:$0.6401
BSC098N10NS5ATMA1
DISTI # 31984735		Infineon Technologies AGTrans MOSFET N-CH 100V 60A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		666
  • 500:$0.8777
  • 250:$0.9395
  • 100:$1.0043
  • 25:$1.1676
  • 15:$1.2972
BSC098N10NS5ATMA1
DISTI # BSC098N10NS5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 60A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC098N10NS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.4439
  • 30000:$0.4519
  • 20000:$0.4679
  • 10000:$0.4859
  • 5000:$0.5039
BSC098N10NS5ATMA1
DISTI # BSC098N10NS5		Infineon Technologies AGTrans MOSFET N-CH 100V 60A 8-Pin TDSON T/R (Alt: BSC098N10NS5)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC098N10NS5ATMA1
    DISTI # SP001241598    		Infineon Technologies AGTrans MOSFET N-CH 100V 60A 8-Pin TDSON T/R (Alt: SP001241598)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 50000:€0.4079
    • 30000:€0.4389
    • 20000:€0.4759
    • 10000:€0.5189
    • 5000:€0.6339
    BSC098N10NS5ATMA1
    DISTI # 12AC9448    		Infineon Technologies AGMOSFET, N-CH, 100V, 60A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0082ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes13310
    • 1000:$0.6640
    • 500:$0.8400
    • 250:$0.8950
    • 100:$0.9500
    • 50:$1.0400
    • 25:$1.1400
    • 10:$1.2300
    • 1:$1.4400
    BSC098N10NS5
    DISTI # 726-BSC098N10NS5    		Infineon Technologies AGMOSFET Pwr transistor 100V OptiMOS 5
    RoHS: Compliant    		5083
    • 1:$1.4300
    • 10:$1.2200
    • 100:$0.9410
    • 500:$0.8320
    • 1000:$0.6570
    • 5000:$0.5820
    • 10000:$0.5610
    BSC098N10NS5ATMA1
    DISTI # 726-BSC098N10NS5ATMA    		Infineon Technologies AGMOSFET Pwr transistor 100V OptiMOS 5
    RoHS: Compliant    		229
    • 1:$1.4300
    • 10:$1.2200
    • 100:$0.9410
    • 500:$0.8320
    • 1000:$0.6570
    • 5000:$0.5820
    • 10000:$0.5610
    BSC098N10NS5ATMA1
    DISTI # 2709890    		Infineon Technologies AGMOSFET, N-CH, 100V, 60A, TDSON
    RoHS: Compliant    		12310
    • 1000:$1.1400
    • 500:$1.4300
    • 100:$1.8500
    • 10:$2.3400
    • 1:$2.6300
    BSC098N10NS5ATMA1
    DISTI # 2709890    		Infineon Technologies AGMOSFET, N-CH, 100V, 60A, TDSON13150
    • 500:£0.6280
    • 250:£0.6700
    • 100:£0.7110
    • 25:£0.8180
    • 5:£0.9250
    Imagen Parte # Descripción
    BSC098N10NS5ATMA1

    Mfr.#: BSC098N10NS5ATMA1

    OMO.#: OMO-BSC098N10NS5ATMA1

    		 MOSFET Pwr transistor 100V OptiMOS 5
    BSC098N10NS5

    Mfr.#: BSC098N10NS5

    OMO.#: OMO-BSC098N10NS5-1190

    		 MOSFET Pwr transistor 100V OptiMOS 5
    BSC098N10NS5ATMA1INFINEO

    Mfr.#: BSC098N10NS5ATMA1INFINEO

    OMO.#: OMO-BSC098N10NS5ATMA1INFINEO-1190

    		 Nuevo y original
    BSC098N10NS5ATMA1-CUT TAPE

    Mfr.#: BSC098N10NS5ATMA1-CUT TAPE

    OMO.#: OMO-BSC098N10NS5ATMA1-CUT-TAPE-1190

    		 Nuevo y original
    BSC098N10NS5ATMA1

    Mfr.#: BSC098N10NS5ATMA1

    OMO.#: OMO-BSC098N10NS5ATMA1-INFINEON-TECHNOLOGIES

    		 IGBT Transistors MOSFET Pwr transistor 100V OptiMOS 5
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de BSC098N10NS5ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,67 US$
    0,67 US$
    10
    0,63 US$
    6,33 US$
    100
    0,60 US$
    59,93 US$
    500
    0,57 US$
    283,00 US$
    1000
    0,53 US$
    532,70 US$
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