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SPD18P06P G

SPD18P06P G
Mfr. #:
SPD18P06P G
Fabricante:
Infineon Technologies
Descripción:
MOSFET P-Ch -60V -18.6A DPAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SPD18P06P G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PG-TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
18.6 A
Rds On - Resistencia de la fuente de drenaje:
130 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
22 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
80 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
SIPMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
SPD18P06
Tipo de transistor:
1 P-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
4 S
Otoño:
11 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5.8 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
24.5 ns
Tiempo típico de retardo de encendido:
12 ns
Parte # Alias:
SP000443926 SPD18P06PGBTMA1 SPD18P6PGXT
Unidad de peso:
0.139332 oz
Tags
SPD18P06PG, SPD18P06P, SPD18, SPD1, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
SPD18P06PGBTMA1
DISTI # SPD18P06PGBTMA1CT-ND		Infineon Technologies AGMOSFET P-CH 60V 18.6A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3In Stock
  • 1000:$0.5743
  • 500:$0.7274
  • 100:$0.9380
  • 10:$1.1870
  • 1:$1.3400
SPD18P06PGBTMA1
DISTI # SPD18P06PGBTMA1DKR-ND		Infineon Technologies AGMOSFET P-CH 60V 18.6A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3In Stock
  • 1000:$0.5743
  • 500:$0.7274
  • 100:$0.9380
  • 10:$1.1870
  • 1:$1.3400
SPD18P06PGBTMA1
DISTI # SPD18P06PGBTMA1TR-ND		Infineon Technologies AGMOSFET P-CH 60V 18.6A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.5204
SPD18P06PGBT
DISTI # SPD18P06PGBTMA1		Infineon Technologies AGTrans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: SPD18P06PGBTMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3889
  • 5000:$0.3749
  • 10000:$0.3609
  • 15000:$0.3489
  • 25000:$0.3429
SPD18P06PGBTMA1
DISTI # 47W3761		Infineon Technologies AGMOSFET, P CHANNEL, 60V, 18.6A, TO-252,Transistor Polarity:P Channel,Continuous Drain Current Id:-18.6A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes0
  • 1:$1.1100
  • 10:$0.9460
  • 100:$0.7270
  • 500:$0.6430
  • 1000:$0.5330
SPD18P06P G
DISTI # 726-SPD18P06P		Infineon Technologies AGMOSFET P-Ch -60V -18.6A DPAK-2
RoHS: Compliant		296
  • 1:$1.1100
  • 10:$0.9460
  • 100:$0.7270
  • 500:$0.6430
  • 1000:$0.5070
  • 2500:$0.4500
SPD18P06PGBTMA1
DISTI # 726-SPD18P06PGBTMA1		Infineon Technologies AGMOSFET P-Ch -60V -18.6A DPAK-2
RoHS: Compliant		0
  • 1:$1.1100
  • 10:$0.9460
  • 100:$0.7270
  • 500:$0.6430
  • 1000:$0.5070
  • 2500:$0.4500
SPD18P06PGInfineon Technologies AGPower Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB
RoHS: Compliant		64200
  • 1000:$0.4500
  • 500:$0.4700
  • 100:$0.4900
  • 25:$0.5100
  • 1:$0.5500
SPD18P06PGBTMA1
DISTI # 7528491		Infineon Technologies AGMOSFET P-CHANNEL 60V 18.6A TO252, PK65
  • 5:£0.8580
  • 10:£0.6840
  • 20:£0.6700
  • 40:£0.6560
  • 75:£0.6160
SPD18P06P GInfineon Technologies AG 470
  • 354:$1.5180
  • 164:$1.7020
  • 1:$3.6800
SPD18P06PGInfineon Technologies AGPower Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB
RoHS: Compliant		Europe - 2400
    SPD18P06P GInfineon Technologies AG 701
      SPD18P06P GInfineon Technologies AGRoHS(ship within 1day)588
      • 1:$2.2900
      • 10:$1.7200
      • 50:$1.4300
      • 100:$1.1400
      • 500:$0.9700
      • 1000:$0.9200
      SPD18P06PGBTMA1
      DISTI # 2212859      		Infineon Technologies AGMOSFET, P-CH, 60V, 18.6A, TO-252
      RoHS: Compliant      		0
      • 5:£0.6830
      • 25:£0.6280
      • 100:£0.5610
      • 250:£0.5290
      • 500:£0.4970
      SPD18P06PGBTMA1
      DISTI # 2212859      		Infineon Technologies AGMOSFET, P-CH, 60V, 18.6A, TO-252
      RoHS: Compliant      		0
      • 1:$1.7600
      • 10:$1.5100
      • 100:$1.1600
      • 500:$1.0200
      • 1000:$0.9090
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      Disponibilidad
      Valores:
      11
      En orden:
      1994
      Ingrese la cantidad:
      El precio actual de SPD18P06P G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,10 US$
      1,10 US$
      10
      0,95 US$
      9,46 US$
      100
      0,73 US$
      72,70 US$
      500
      0,64 US$
      321,50 US$
      1000
      0,51 US$
      507,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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