CSD25303W1015

CSD25303W1015
Mfr. #:
CSD25303W1015
Descripción:
MOSFET PCh NexFET Pwr MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CSD25303W1015 Ficha de datos
Entrega:
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ECAD Model:
Más información:
CSD25303W1015 más información CSD25303W1015 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Instrumentos Texas
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DSBGA-6
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
3 A
Rds On - Resistencia de la fuente de drenaje:
56 mOhms
Vgs - Voltaje puerta-fuente:
8 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.5 W
Configuración:
Único
Nombre comercial:
NexFET
Embalaje:
Carrete
Altura:
0.625 mm
Longitud:
1.5 mm
Serie:
CSD25303W1015
Tipo de transistor:
1 P-Channel
Ancho:
1 mm
Marca:
Instrumentos Texas
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Unidad de peso:
0.000060 oz
Tags
CSD2530, CSD253, CSD25, CSD2, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Parte # Descripción Valores Precio
CSD25303W1015
DISTI # 296-28317-2-ND
MOSFET P-CH 20V 3A 6DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    CSD25303W1015
    DISTI # 296-28317-1-ND
    MOSFET P-CH 20V 3A 6DSBGA
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      CSD25303W1015
      DISTI # 296-28317-6-ND
      MOSFET P-CH 20V 3A 6DSBGA
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        CSD25303W1015
        DISTI # CSD25303W1015
        Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD25303W1015)
        RoHS: Not Compliant
        Min Qty: 1000
        Americas - 0
        • 1000:$0.3619
        • 1002:$0.3449
        • 2002:$0.3329
        • 5000:$0.3219
        • 10000:$0.3129
        CSD25303W1015Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant
        4390
        • 1000:$0.3300
        • 500:$0.3500
        • 100:$0.3600
        • 25:$0.3800
        • 1:$0.4100
        CSD25303W1015
        DISTI # 595-CSD25303W1015
        MOSFET PCh NexFET Pwr MOSFET
        RoHS: Compliant
        0
          Imagen Parte # Descripción
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          Disponibilidad
          Valores:
          Available
          En orden:
          4500
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