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STW88N65M5-4

STW88N65M5-4
Mfr. #:
STW88N65M5-4
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STW88N65M5-4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STW88N65M5-4 más información STW88N65M5-4 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Configuración:
Único
Nombre comercial:
MDmesh
Serie:
STW88N65M5-4
Tipo de transistor:
1 N-Channel
Marca:
STMicroelectronics
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
600
Subcategoría:
MOSFET
Unidad de peso:
0.211644 oz
Tags
STW88, STW8, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.024 Ohm typ., 84 A, MDmesh M5 Power MOSFET in a TO247-4 package
***ure Electronics
N-Channel 710 V 0.029 Ohm MDmesh™ M5 Power MOSFET - TO-247-4
***ical
Trans MOSFET N-CH 650V 84A 4-Pin(4+Tab) TO-247 Tube
***el Electronic
0402 0.18 uF 10 V ±10% Tolerance X5R Multilayer Ceramic Capacitor
***ark
MOSFET, N-CH, 650V, 84A, TO247-4; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:84A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***icroelectronics SCT
Power MOSFETs, 650V, 84A, TO247-4, Tube
***emi
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 75 A, 23 mΩ, TO-247 4lead
***r Electronics
Power Field-Effect Transistor, 75A I(D), 650V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***rchild Semiconductor
SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is suitable for various DC/AC power conversion for system miniaturization and higher efficiency.
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 76 A, 41 mΩ, TO-247 4L
***et
N-Channel SuperFET II FRFET MOSFET 650V Drain to Source Voltage 76A Continuous Drain Current 595W Power Dissipation Thru-Hole 4-Pin TO-247 Tube
***r Electronics
Power Field-Effect Transistor, 76A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
Aluminum Electrolytic Capacitors 330μF Radial, Can - SMD ±20% Tape & Reel (TR) FT 0.413 10.50mm Surface Mount Automotive CAP ALUM 330UF 20% 50V SMD
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***et
Trans MOSFET N-CH 650V 77.5A 4-Pin TO-247 Tube
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-4, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***icroelectronics
N-channel 650 V, 0.037 Ohm typ., 58 A MDmesh M5 Power MOSFET in a TO247-4 package
***ure Electronics
STW69N65M5-4 Series 710 V 0.045Ohm 58A N-Channel MDmesh™ V Power Mosfet-TO-247-4
***ical
Trans MOSFET N-CH 650V 58A 4-Pin(4+Tab) TO-247 Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 650V 58A FDmesh TO247-4
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***icroelectronics SCT
Power MOSFETs, 650V, 58A, TO247-4, Tube
***ical
Trans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube
***nell
MOSFET, N-CH, 650V, 33A, 171W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 171W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-4, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***ical
Trans MOSFET N-CH 650V 24A 4-Pin(4+Tab) TO-247 Tube
***nell
MOSFET, N-CH, 650V, 24A, 128W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.084ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 128W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-4, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descripción Valores Precio
STW88N65M5-4
DISTI # V99:2348_17628551		STMicroelectronicsTrans MOSFET N-CH 650V 84A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		110
  • 510:$10.6670
  • 120:$12.7190
  • 30:$14.1300
  • 10:$14.8830
  • 1:$16.1210
STW88N65M5-4
DISTI # V36:1790_13795947		STMicroelectronicsTrans MOSFET N-CH 650V 84A 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant		0
    STW88N65M5-4
    DISTI # 497-16334-5-ND    		STMicroelectronicsMOSFET N-CH 650V 84A
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		411In Stock
    • 510:$11.9059
    • 120:$13.3839
    • 30:$15.1903
    • 10:$15.8470
    • 1:$17.2400
    STW88N65M5-4
    DISTI # 25948444    		STMicroelectronicsTrans MOSFET N-CH 650V 84A 4-Pin(4+Tab) TO-247 Tube
    RoHS: Compliant    		110
    • 120:$13.0645
    • 30:$14.4254
    • 1:$16.1637
    STW88N65M5-4
    DISTI # STW88N65M5-4    		STMicroelectronicsTrans MOSFET N-CH 710V 84A 4-Pin TO-247 Tube - Rail/Tube (Alt: STW88N65M5-4)
    RoHS: Not Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 6000:$9.8900
    • 3600:$10.0900
    • 2400:$10.5900
    • 1200:$11.0900
    • 600:$11.6900
    STW88N65M5-4
    DISTI # 45AC7796    		STMicroelectronicsTrans MOSFET N-CH 710V 84A 4-Pin TO-247 Tube - Bulk (Alt: 45AC7796)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 500:$11.3400
    • 250:$12.1300
    • 100:$12.7500
    • 50:$13.6100
    • 25:$14.4700
    • 10:$15.1000
    • 1:$16.4200
    STW88N65M5-4
    DISTI # 45AC7796    		STMicroelectronicsMOSFET, N-CH, 650V, 84A, TO247-4,Transistor Polarity:N Channel,Continuous Drain Current Id:84A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes150
    • 1:$8.7200
    • 10:$8.7200
    • 25:$8.7200
    • 50:$8.7200
    • 100:$8.7200
    • 250:$8.7200
    • 500:$8.7200
    STW88N65M5-4
    DISTI # 511-STW88N65M5-4    		STMicroelectronicsMOSFET N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 package
    RoHS: Compliant    		445
    • 1:$16.4200
    • 10:$15.1000
    • 25:$14.4700
    • 100:$12.7500
    • 250:$12.1300
    • 500:$11.3400
    STW88N65M5-4
    DISTI # 2807332    		STMicroelectronicsMOSFET, N-CH, 650V, 84A, TO247-4378
    • 100:£9.3200
    • 50:£9.9600
    • 10:£10.5900
    • 5:£12.0200
    • 1:£12.3200
    STW88N65M5-4
    DISTI # 2807332    		STMicroelectronicsMOSFET, N-CH, 650V, 84A, TO247-4
    RoHS: Compliant    		370
    • 250:$15.7500
    • 100:$16.8100
    • 50:$17.4000
    • 10:$19.0800
    • 5:$20.6700
    • 1:$22.0500
    Imagen Parte # Descripción
    CRCW06034K70FKEAC

    Mfr.#: CRCW06034K70FKEAC

    OMO.#: OMO-CRCW06034K70FKEAC

    		 Thick Film Resistors - SMD 1/10Watt 4.7Kohms 1% Commercial Use
    CRCW0603220KFKEAC

    Mfr.#: CRCW0603220KFKEAC

    OMO.#: OMO-CRCW0603220KFKEAC

    		 Thick Film Resistors - SMD 1/10Watt 220Kohms 1% Commercial Use
    CRCW06036K20FKEAC

    Mfr.#: CRCW06036K20FKEAC

    OMO.#: OMO-CRCW06036K20FKEAC

    		 Thick Film Resistors - SMD 1/10Watt 6.2Kohms 1% Commercial Use
    CRCW060313K0FKEAC

    Mfr.#: CRCW060313K0FKEAC

    OMO.#: OMO-CRCW060313K0FKEAC

    		 Thick Film Resistors - SMD 1/10Watt 13Kohms 1% Commercial Use
    CRCW060313K0FKEAC

    Mfr.#: CRCW060313K0FKEAC

    OMO.#: OMO-CRCW060313K0FKEAC-VISHAY-DALE

    		 D11/CRCW0603-C 100 13K 1% ET1
    CRCW060318K7FKEAC

    Mfr.#: CRCW060318K7FKEAC

    OMO.#: OMO-CRCW060318K7FKEAC-VISHAY-DALE

    		 D11/CRCW0603-C 100 18K7 1% ET1
    CRCW06034K70FKEAC

    Mfr.#: CRCW06034K70FKEAC

    OMO.#: OMO-CRCW06034K70FKEAC-VISHAY-DALE

    		 D11/CRCW0603-C 100 4K7 1% ET1
    CRCW06030000Z0EAC

    Mfr.#: CRCW06030000Z0EAC

    OMO.#: OMO-CRCW06030000Z0EAC-VISHAY-DALE

    		 RES SMD 0 OHM JUMP 1/10W 0603
    CRCW06036K20FKEAC

    Mfr.#: CRCW06036K20FKEAC

    OMO.#: OMO-CRCW06036K20FKEAC-VISHAY-DALE

    		 D11/CRCW0603-C 100 6K2 1% ET1
    CRCW060382K0FKEAC

    Mfr.#: CRCW060382K0FKEAC

    OMO.#: OMO-CRCW060382K0FKEAC-VISHAY-DALE

    		 D11/CRCW0603-C 100 82K 1% ET1
    Disponibilidad
    Valores:
    445
    En orden:
    2428
    Ingrese la cantidad:
    El precio actual de STW88N65M5-4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    16,42 US$
    16,42 US$
    10
    15,10 US$
    151,00 US$
    25
    14,47 US$
    361,75 US$
    100
    12,75 US$
    1 275,00 US$
    250
    12,13 US$
    3 032,50 US$
    500
    11,34 US$
    5 670,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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