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STGW40H120F2

STGW40H120F2
Mfr. #:
STGW40H120F2
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGW40H120F2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGW40H120F2 más información STGW40H120F2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.1 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
80 A
Pd - Disipación de energía:
468 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGW40H120F2
Embalaje:
Tubo
Corriente continua de colector Ic Max:
80 A
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
600
Subcategoría:
IGBT
Unidad de peso:
1.340411 oz
Tags
STGW40H1, STGW40H, STGW40, STGW4, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***va Crawler
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
***et Europe
Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube
***ronik
IGBT 1200V 80A 2.1V TO247
***i-Key
IGBT 1200V 40A HS TO-247
***ark
Ptd High Voltage
IGBT H Series
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Parte # Mfg. Descripción Valores Precio
STGW40H120F2
DISTI # 30608731		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		5
  • 4:$6.6428
STGW40H120F2
DISTI # 497-14716-5-ND		STMicroelectronicsIGBT 1200V 40A HS TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 510:$6.6727
  • 120:$7.6629
  • 30:$8.8253
  • 10:$9.2560
  • 1:$10.2500
STGW40H120F2
DISTI # STGW40H120F2		STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube (Alt: STGW40H120F2)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€4.3900
  • 500:€4.7900
  • 100:€4.8900
  • 50:€5.0900
  • 25:€5.2900
  • 10:€5.5900
  • 1:€6.0900
STGW40H120F2
DISTI # STGW40H120F2		STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW40H120F2)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 6000:$5.1900
  • 3000:$5.2900
  • 1800:$5.4900
  • 1200:$5.7900
  • 600:$6.0900
STGW40H120F2
DISTI # 79X6451		STMicroelectronicsPTD HIGH VOLTAGE0
  • 500:$5.3300
  • 250:$5.5000
  • 100:$6.5600
  • 50:$7.0600
  • 25:$7.5500
  • 10:$8.2900
  • 1:$9.2300
STGW40H120F2
DISTI # 511-STGW40H120F2		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
RoHS: Compliant		1
  • 1:$9.7500
  • 10:$8.8100
  • 25:$8.4000
  • 100:$7.2900
  • 250:$6.9700
  • 500:$6.3500
  • 1000:$5.5300
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Mfr.#: SN65HVD75DR

OMO.#: OMO-SN65HVD75DR

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Mfr.#: SN74ALB16244DGGR

OMO.#: OMO-SN74ALB16244DGGR

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Mfr.#: ES1D

OMO.#: OMO-ES1D

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Mfr.#: IRLML6402TRPBF

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Mfr.#: RC0603FR-071KL

OMO.#: OMO-RC0603FR-071KL

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Mfr.#: CC0805KRX7R9BB104

OMO.#: OMO-CC0805KRX7R9BB104

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Mfr.#: IRLML6402TRPBF

OMO.#: OMO-IRLML6402TRPBF-INFINEON-TECHNOLOGIES

 MOSFET P-CH 20V 3.7A SOT-23
SN65HVD75DR

Mfr.#: SN65HVD75DR

OMO.#: OMO-SN65HVD75DR-TEXAS-INSTRUMENTS

 RS-485 Interface IC 3.3V-Supply RS-485 with IEC ESD Prot
SN74ALB16244DGGR

Mfr.#: SN74ALB16244DGGR

OMO.#: OMO-SN74ALB16244DGGR-TEXAS-INSTRUMENTS

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ES1D

Mfr.#: ES1D

OMO.#: OMO-ES1D-ON-SEMICONDUCTOR

 DIODE GEN PURP 200V 1A SMA
Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de STGW40H120F2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
9,75 US$
9,75 US$
10
8,81 US$
88,10 US$
25
8,40 US$
210,00 US$
100
7,29 US$
729,00 US$
250
6,97 US$
1 742,50 US$
500
6,35 US$
3 175,00 US$
1000
5,53 US$
5 530,00 US$
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