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A2V09H300-04NR3

A2V09H300-04NR3
Mfr. #:
A2V09H300-04NR3
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 720-960 MHz, 79 W Avg., 48 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A2V09H300-04NR3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
Polaridad del transistor:
Canal N
Tecnología:
Si
Id - Corriente de drenaje continua:
900 mA, 1.3 A
Vds - Voltaje de ruptura de drenaje-fuente:
- 500 mV, 105 V
Ganar:
19.7 dB
Potencia de salida:
79 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
OM-780-4L-4
Embalaje:
Carrete
Frecuencia de operación:
720 MHz to 960 MHz
Escribe:
RF Power MOSFET
Marca:
NXP / Freescale
Número de canales:
2 Channel
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
250
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 6 V, 10 V
Vgs th - Voltaje umbral puerta-fuente:
1.8 V
Parte # Alias:
935320809528
Unidad de peso:
0.109254 oz
Tags
A2V09, A2V0, A2V
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Airfast RF Power LDMOS Transistor, 720-960 MHz, 79 W Avg., 48 V / REEL RoHS Compliant: Yes
***W
RF Power Transistor,720 to 960 MHz, 223 W, Typ Gain in dB is 19.7 @ 940 MHz, 48 V, LDMOS, SOT1818
***et
Trans RF FET N-CH 105V 4-Pin OM-780 T/R
***i-Key
AIRFAST RF POWER LDMOS TRANSISTO
Parte # Mfg. Descripción Valores Precio
A2V09H300-04NR3
DISTI # A2V09H300-04NR3-ND		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Not compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$95.7101
A2V09H300-04NR3
DISTI # A2V09H300-04NR3		NXP SemiconductorsTrans RF FET N-CH 105V 4-Pin OM-780 T/R (Alt: A2V09H300-04NR3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1:€96.2900
  • 10:€94.4900
  • 25:€91.5900
  • 50:€88.5900
  • 100:€88.0900
  • 500:€87.4900
  • 1000:€86.3900
A2V09H300-04NR3
DISTI # A2V09H300-04NR3		NXP SemiconductorsTrans RF FET N-CH 105V 4-Pin OM-780 T/R - Tape and Reel (Alt: A2V09H300-04NR3)
RoHS: Compliant
Min Qty: 250
Container: Reel		Americas - 0
  • 250:$104.8900
  • 500:$100.6900
  • 1000:$96.7900
  • 1500:$93.2900
  • 2500:$91.4900
A2V09H300-04NR3
DISTI # 841-A2V09H300-04NR3		NXP SemiconductorsRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 720-960 MHz, 79 W Avg., 48 V
RoHS: Compliant		0
  • 250:$93.5600
A2V09H300-04NR3
DISTI # A2V09H300-04NR3		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		192
  • 1:$120.3300
  • 10:$111.2100
  • 25:$107.9500
Imagen Parte # Descripción
A2V09H300-04NR3

Mfr.#: A2V09H300-04NR3

OMO.#: OMO-A2V09H300-04NR3

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 720-960 MHz, 79 W Avg., 48 V
A2V09H300-04NR3

Mfr.#: A2V09H300-04NR3

OMO.#: OMO-A2V09H300-04NR3-NXP-SEMICONDUCTORS

 AIRFAST RF POWER LDMOS TRANSISTO
A2V09H300-04N

Mfr.#: A2V09H300-04N

OMO.#: OMO-A2V09H300-04N-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de A2V09H300-04NR3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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