FDU8580

FDU8580
Mfr. #:
FDU8580
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 20V 35A 9 OHM NCH POWER TRENC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDU8580 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDU8580 DatasheetFDU8580 Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
35 A
Rds On - Resistencia de la fuente de drenaje:
6.6 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
49.5 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
61 S
Otoño:
34 ns
Tipo de producto:
MOSFET
Hora de levantarse:
11 ns
Cantidad de paquete de fábrica:
75
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
59 ns
Tiempo típico de retardo de encendido:
7 ns
Unidad de peso:
0.139332 oz
Tags
FDU8, FDU
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ter Electronics
20V,35A,9 OHM, NCH POWER TRENCH MOSFET
***i-Key
MOSFET N-CH 20V 35A I-PAK
***nell
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:35A; Resistance, Rds On:0.009ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:159A; No. of Pins:3; Pin Configuration:1(G), 2(D), 3(S); Power Dissipation:49.5W; Power, Pd:49.5W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Typ Capacitance Ciss:1085pF; Voltage, Vds:20V; Voltage, Vds Max:20V; Voltage, Vgs th Max:2.5V
Parte # Mfg. Descripción Valores Precio
FDU8580
DISTI # FDU8580-ND
ON SemiconductorMOSFET N-CH 20V 35A I-PAK
RoHS: Compliant
Min Qty: 1800
Container: Tube
Limited Supply - Call
    FDU8580Fairchild Semiconductor CorporationPower Field-Effect Transistor, 35A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant
    7200
    • 1000:$0.5900
    • 500:$0.6200
    • 100:$0.6500
    • 25:$0.6800
    • 1:$0.7300
    FDU8580
    DISTI # 512-FDU8580
    ON SemiconductorMOSFET 20V 35A 9 OHM NCH POWER TRENC
    RoHS: Compliant
    0
      FDU8580
      DISTI # 1324815
      ON Semiconductor 
      RoHS: Compliant
      0
      • 1:$1.5500
      • 10:$1.1200
      • 100:$1.0400
      • 250:$0.9870
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      OMO.#: OMO-FDU7N60NZ-1190

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      Disponibilidad
      Valores:
      Available
      En orden:
      1500
      Ingrese la cantidad:
      El precio actual de FDU8580 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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