IRF6717MTR1PBF

IRF6717MTR1PBF
Mfr. #:
IRF6717MTR1PBF
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF6717MTR1PBF Ficha de datos
Entrega:
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Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6717MTR1PBF DatasheetIRF6717MTR1PBF Datasheet (P4-P6)IRF6717MTR1PBF Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IOR
categoria de producto
FET - Single
embalaje
Carrete
Estilo de montaje
SMD / SMT
Paquete-Estuche
DirectFET-4
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
96 W
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
220 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Resistencia a la fuente de desagüe de Rds
2.1 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
46 nC
Tags
IRF6717, IRF671, IRF67, IRF6, IRF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET N CH, 25V 38A SMD; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:96W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Current Id Max:220A; Driver Case Style:MX; Package / Case:L6; Power Dissipation Pd:2.8W; Power Dissipation Pd:96W; Pulse Current Idm:38A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V
***(Formerly Allied Electronics)
A 25V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET L2 PACKAGE RATED AT 61
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 61 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET, N CH, 25V, 61A, DIRECTFET L2; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:25V; On Resistance Rds(on):500µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:4.3W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; SVHC:No SVHC (20-Jun-2011); Current Id Max:61A; Package / Case:L6; Power Dissipation Pd:4.3W; Power Dissipation Pd:4.3W; Pulse Current Idm:490A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V
Parte # Mfg. Descripción Valores Precio
IRF6717MTR1PBF
DISTI # V36:1790_16240972
Infineon Technologies AGTrans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R
RoHS: Compliant
1000
  • 10000:$1.7486
  • 5000:$1.8644
  • 2000:$2.0579
  • 1000:$2.3115
IRF6717MTR1PBF
DISTI # IRF6717MTR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 25V 38A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6717MTR1PBF
    DISTI # IRF6717MTR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 25V 38A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6717MTR1PBF
      DISTI # IRF6717MTR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 25V 38A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6717MTR1PBF
        DISTI # 26194649
        Infineon Technologies AGTrans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R
        RoHS: Compliant
        1000
        • 1000:$2.4359
        IRF6717MTR1PBF
        DISTI # 70019603
        Infineon Technologies AGIRF6717MTR1PBF N-channel MOSFET Transistor,38 A,25 V,7-Pin DirectFET MX
        RoHS: Compliant
        0
        • 1000:$1.9000
        • 2000:$1.7200
        IRF6717MTR1PBF
        DISTI # 942-IRF6717MTR1PBF
        Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC
        RoHS: Compliant
        0
          IRF6717MTR1PBFInternational Rectifier 
          RoHS: Compliant
          Europe - 1000
            IRF6717MTR1PBF
            DISTI # C1S322000674716
            Infineon Technologies AGMOSFETs
            RoHS: Compliant
            1000
            • 1000:$2.4154
            Imagen Parte # Descripción
            IRF6717MTRPBF

            Mfr.#: IRF6717MTRPBF

            OMO.#: OMO-IRF6717MTRPBF

            MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC
            IRF6717MTRPBF.

            Mfr.#: IRF6717MTRPBF.

            OMO.#: OMO-IRF6717MTRPBF--1190

            Nuevo y original
            IRF6717MTR1PBF

            Mfr.#: IRF6717MTR1PBF

            OMO.#: OMO-IRF6717MTR1PBF-INFINEON-TECHNOLOGIES

            IGBT Transistors MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC
            IRF6717MTRPBF

            Mfr.#: IRF6717MTRPBF

            OMO.#: OMO-IRF6717MTRPBF-INFINEON-TECHNOLOGIES

            MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC
            Disponibilidad
            Valores:
            Available
            En orden:
            5500
            Ingrese la cantidad:
            El precio actual de IRF6717MTR1PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            2,58 US$
            2,58 US$
            10
            2,45 US$
            24,51 US$
            100
            2,32 US$
            232,20 US$
            500
            2,19 US$
            1 096,50 US$
            1000
            2,06 US$
            2 064,00 US$
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