SIZ710DT-T1-GE3

SIZ710DT-T1-GE3
Mfr. #:
SIZ710DT-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIZ710DT-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ710DT-T1-GE3 DatasheetSIZ710DT-T1-GE3 Datasheet (P4-P6)SIZ710DT-T1-GE3 Datasheet (P7-P9)SIZ710DT-T1-GE3 Datasheet (P10-P12)SIZ710DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Más información:
SIZ710DT-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAIR-6x3.7-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
16 A, 35 A
Rds On - Resistencia de la fuente de drenaje:
6.8 mOhms, 3.3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
18 nC, 60 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
27 W, 48 W
Configuración:
Doble
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
TAMAÑO
Tipo de transistor:
2 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
45 S, 85 S
Otoño:
12 ns, 12 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns, 15 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
20 ns, 30 ns
Tiempo típico de retardo de encendido:
15 ns, 25 ns
Parte # Alias:
SIZ710DT-GE3
Tags
SIZ710DT-T, SIZ71, SIZ7, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 20 V 0.0068 Ohm Surface Mount Power MosFet - PowerPAIR 6 x 3.7 mm
***et Europe
Transistor MOSFET Array Dual N-CH 20V 16A/35A 6-Pin PowerPAIR T/R
***ark
MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:35A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.0068ohm; Rds(on) Test Voltage Vgs:10V
***ment14 APAC
MOSFET,NN CH,HALF BR,DIO,20V,PPAIR6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:4.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAIR; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):5500µohm; Power Dissipation Pd:4.6W
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Parte # Mfg. Descripción Valores Precio
SIZ710DT-T1-GE3
DISTI # V72:2272_09216120
Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R
RoHS: Compliant
2000
  • 1000:$0.6544
  • 500:$0.7412
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 10:$1.0236
  • 1:$1.1931
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.6622
SIZ710DT-T1-GE3
DISTI # 30150542
Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R
RoHS: Compliant
2000
  • 1000:$0.6544
  • 500:$0.7412
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 12:$1.0236
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
  • 3000:$0.6596
  • 6000:$0.5074
  • 9000:$0.4039
  • 15000:$0.3412
  • 30000:$0.3141
  • 75000:$0.3044
  • 150000:$0.2954
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€1.2499
  • 6000:€0.8959
  • 12000:€0.7269
  • 18000:€0.6429
  • 30000:€0.6149
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.6249
  • 6000:$0.6069
  • 12000:$0.5819
  • 18000:$0.5659
  • 30000:$0.5509
SIZ710DT-T1-GE3
DISTI # 83T3536
Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$1.5100
  • 25:$1.2400
  • 50:$1.1000
  • 100:$0.9510
  • 250:$0.8850
  • 500:$0.8180
  • 1000:$0.7190
SIZ710DT-T1-GE3
DISTI # 65T1676
Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V , RoHS Compliant: Yes0
  • 1:$0.6370
  • 3000:$0.6330
  • 6000:$0.6020
  • 12000:$0.5340
SIZ710DT-T1-GE3
DISTI # 781-SIZ710DT-T1-GE3
Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
RoHS: Compliant
378
  • 1:$1.5100
  • 10:$1.2400
  • 100:$0.9510
  • 500:$0.8180
  • 1000:$0.7190
  • 3000:$0.7170
SIZ710DT-T1-GE3
DISTI # C1S803601344629
Vishay IntertechnologiesMOSFETs2000
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 10:$1.0236
SIZ710DT-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7Americas -
    SIZ710DT-T1-GE3
    DISTI # 2129099
    Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, 16A/35A, POWERPA
    RoHS: Compliant
    0
    • 3000:£0.6370
    Imagen Parte # Descripción
    S1G-13-F

    Mfr.#: S1G-13-F

    OMO.#: OMO-S1G-13-F

    Rectifiers 400V 1A
    S1G-13-F

    Mfr.#: S1G-13-F

    OMO.#: OMO-S1G-13-F-DIODES

    DIODE GEN PURP 400V 1A SMA
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de SIZ710DT-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,50 US$
    1,50 US$
    10
    1,23 US$
    12,30 US$
    100
    0,95 US$
    95,00 US$
    500
    0,82 US$
    408,50 US$
    1000
    0,64 US$
    644,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    • SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • Compare SIZ710DT-T1-GE3
      SIZ710DTT1 vs SIZ710DTT1GE vs SIZ710DTT1GE3
    • SIRA20DP TrenchFET® Gen IV MOSFET
      Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
    • P-Channel MOSFETs
      Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
    • SiP32452, SiP32453 Load Switch
      Vishay's load switches have a low input logic control threshold and a fast turn on time.
    • PowerPAIR®
      Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
    Top