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IPB049N08N5ATMA1

IPB049N08N5ATMA1
Mfr. #:
IPB049N08N5ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 80V TO263-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB049N08N5ATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IPB049N08N5ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
IPB049N08N5 SP001227052
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-263-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
125 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
7 ns
Hora de levantarse
7 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
80 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Resistencia a la fuente de desagüe de Rds
6.6 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
27 ns
Tiempo de retardo de encendido típico
17 ns
Qg-Gate-Charge
42 nC
Transconductancia directa-Mín.
52 S
Modo de canal
Mejora
Tags
IPB049N0, IPB049, IPB04, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ark
Mosfet, N-Ch, 80V, 80A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0043Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descripción Valores Precio
IPB049N08N5ATMA1
DISTI # V72:2272_06383300		Infineon Technologies AGTrans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		334
  • 75000:$0.9624
  • 30000:$0.9724
  • 15000:$0.9824
  • 6000:$0.9924
  • 3000:$1.0026
  • 1000:$1.0128
  • 500:$1.1045
  • 250:$1.2104
  • 100:$1.2521
  • 50:$1.3485
  • 25:$1.4984
  • 10:$1.5510
  • 1:$1.7777
IPB049N08N5ATMA1
DISTI # IPB049N08N5ATMA1-ND		Infineon Technologies AGMOSFET N-CH 80V TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.2344
IPB049N08N5ATMA1
DISTI # 26195151		Infineon Technologies AGTrans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		334
  • 500:$1.1045
  • 250:$1.2104
  • 100:$1.2521
  • 50:$1.5149
  • 25:$1.5328
  • 10:$1.5511
  • 7:$1.7777
IPB049N08N5ATMA1
DISTI # IPB049N08N5ATMA1		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPB049N08N5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.1149
  • 2000:$1.0739
  • 4000:$1.0359
  • 6000:$1.0009
  • 10000:$0.9829
IPB049N08N5ATMA1
DISTI # SP001227052		Infineon Technologies AGMV POWER MOS (Alt: SP001227052)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€1.2629
  • 2000:€1.0519
  • 4000:€0.9709
  • 6000:€0.9019
  • 10000:€0.8419
IPB049N08N5ATMA1
DISTI # 49AC0281		Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes928
  • 1:$2.0900
  • 10:$1.7800
  • 25:$1.6600
  • 50:$1.5400
  • 100:$1.4200
  • 250:$1.3400
  • 500:$1.2500
IPB049N08N5ATMA1
DISTI # 726-IPB049N08N5ATMA1		Infineon Technologies AGMOSFET N-Ch 80V 80A D2PAK-2
RoHS: Compliant		537
  • 1:$2.0900
  • 10:$1.7800
  • 100:$1.4200
  • 500:$1.2500
  • 1000:$1.0300
IPB049N08N5ATMA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 80V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		1000
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
IPB049N08N5ATMA1
DISTI # C1S322000625598		Infineon Technologies AGMOSFETs334
  • 100:$1.2521
  • 50:$1.5149
  • 25:$1.5328
  • 10:$1.5511
IPB049N08N5ATMA1
DISTI # 2839449		Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3
RoHS: Compliant		928
  • 5:$3.6500
  • 25:$3.1800
  • 100:$2.6000
  • 250:$2.1900
  • 500:$1.9000
  • 1000:$1.7900
  • 5000:$1.7000
IPB049N08N5ATMA1
DISTI # 2839449		Infineon Technologies AGMOSFET, N-CH, 80V, 80A, TO-263-3
RoHS: Compliant		928
  • 1:£2.2400
  • 10:£1.7000
  • 100:£1.3500
Imagen Parte # Descripción
IPB049N08N5ATMA1

Mfr.#: IPB049N08N5ATMA1

OMO.#: OMO-IPB049N08N5ATMA1

 MOSFET N-Ch 80V 80A D2PAK-2
IPB049N06L3

Mfr.#: IPB049N06L3

OMO.#: OMO-IPB049N06L3-1190

 Nuevo y original
IPB049N06L3G

Mfr.#: IPB049N06L3G

OMO.#: OMO-IPB049N06L3G-1190

 Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB049N06L3GATMA1

Mfr.#: IPB049N06L3GATMA1

OMO.#: OMO-IPB049N06L3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 80A TO263-3
IPB049N06L3 G

Mfr.#: IPB049N06L3 G

OMO.#: OMO-IPB049N06L3-G-126

 IGBT Transistors MOSFET N-Ch 60V 80A D2PAK-2
IPB049N08N5ATMA1

Mfr.#: IPB049N08N5ATMA1

OMO.#: OMO-IPB049N08N5ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 80V TO263-3
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de IPB049N08N5ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,47 US$
1,47 US$
10
1,40 US$
14,01 US$
100
1,33 US$
132,69 US$
500
1,25 US$
626,60 US$
1000
1,18 US$
1 179,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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