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IRF630NSPBF

IRF630NSPBF
Mfr. #:
IRF630NSPBF
Fabricante:
Infineon Technologies
Descripción:
Darlington Transistors MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF630NSPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF630NSPBF DatasheetIRF630NSPBF Datasheet (P4-P6)IRF630NSPBF Datasheet (P7-P9)IRF630NSPBF Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
FET - Single
embalaje
Tubo
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
82 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
15 ns
Hora de levantarse
14 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
9.5 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Resistencia a la fuente de desagüe de Rds
300 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
27 ns
Tiempo de retardo de encendido típico
7.9 ns
Qg-Gate-Charge
23.3 nC
Modo de canal
Mejora
Tags
IRF630NS, IRF630N, IRF630, IRF63, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ow.cn
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 82 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.3A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 200V, 9.5A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:94mJ; Capacitance Ciss Typ:575pF; Current Iar:9.3A; Current Id Max:9.3A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:15ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.83°C/W; N-channel Gate Charge:35nC; No. of Transistors:1; On State resistance @ Vgs = 10V:300mohm; Package / Case:D2-PAK; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:37A; Rise Time:14ns
Parte # Mfg. Descripción Valores Precio
IRF630NSPBF
DISTI # V36:1790_13890565		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube7
  • 100:$1.2055
  • 25:$1.3058
  • 10:$1.4732
  • 1:$1.6815
IRF630NSPBF
DISTI # IRF630NSPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 9.3A D2PAK
RoHS: Compliant
Min Qty: 850
Container: Tube		Limited Supply - Call
    IRF630NSPBF
    DISTI # C1S322000589278    		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube
    RoHS: Compliant    		7
    • 10:$1.5584
    IRF630NSPBF
    DISTI # 38K2816    		Infineon Technologies AGMOSFET Transistor, N Channel, 9.3 A, 200 V, 300 mohm, 10 V, 4 V , RoHS Compliant: Yes0
      IRF630NSPBF
      DISTI # 942-IRF630NSPBF      		Infineon Technologies AGMOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
      RoHS: Compliant      		0
        IRF630NSPBFInternational RectifierPower Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant        		2539
        • 1000:$0.6900
        • 500:$0.7300
        • 100:$0.7600
        • 25:$0.7900
        • 1:$0.8500
        IRF630NSPBFInternational Rectifier 29
          IRF630NSPBFInternational Rectifier 
          RoHS: Compliant          		Europe - 47
            IRF630NSTRLPBF
            DISTI # IRF630NSPBF-GURT            		Infineon Technologies AGN-Ch 200V 9,3A 82W 0,3R DPak
            RoHS: Compliant            		360
            • 10:€0.6660
            • 50:€0.3960
            • 200:€0.3060
            • 500:€0.2950
            IRF630NSPBF
            DISTI # 8648352            		Infineon Technologies AGMOSFET, N, 200V, 9.5A, D2-PAK
            RoHS: Compliant            		2
            • 1:$2.6200
            • 10:$2.2400
            • 100:$1.7800
            • 500:$1.5700
            • 1000:$1.3000
            • 2500:$1.2800
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            IRF630BTSTU_FP001

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            Mfr.#: IRF634A

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            IRF634PBF,IRF634

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            OMO.#: OMO-IRF634PBF-IRF634-1190

            		 Nuevo y original
            Disponibilidad
            Valores:
            Available
            En orden:
            4500
            Ingrese la cantidad:
            El precio actual de IRF630NSPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            1,04 US$
            1,04 US$
            10
            0,98 US$
            9,83 US$
            100
            0,93 US$
            93,15 US$
            500
            0,88 US$
            439,90 US$
            1000
            0,83 US$
            828,00 US$
            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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