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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| HGT1S10N120BNST DISTI # HGT1S10N120BNSTCT-ND | ON Semiconductor | IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1219In Stock |
|
| HGT1S10N120BNST DISTI # HGT1S10N120BNSTDKR-ND | ON Semiconductor | IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1219In Stock |
|
| HGT1S10N120BNST DISTI # HGT1S10N120BNSTTR-ND | ON Semiconductor | IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | 800In Stock |
|
| HGTG10N120BND DISTI # HGTG10N120BND-ND | ON Semiconductor | IGBT 1200V 35A 298W TO247 RoHS: Compliant Min Qty: 1 Container: Tube | 787In Stock |
|
| HGTP10N120BN DISTI # HGTP10N120BNFS-ND | ON Semiconductor | IGBT 1200V 35A 298W TO220AB RoHS: Compliant Min Qty: 800 Container: Tube | Limited Supply - Call |
|
| HGT1S10N120BNS DISTI # HGT1S10N120BNSFS-ND | ON Semiconductor | IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 800 Container: Tube | Limited Supply - Call |
|
| HGTP10N120BN DISTI # HGTP10N120BN | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail (Alt: HGTP10N120BN) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| HGTP10N120BN DISTI # HGTP10N120BN | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP10N120BN) RoHS: Compliant Min Qty: 800 Container: Tube | Americas - 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 Container: Tube | Americas - 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 | Asia - 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| HGT1S10N120BNS DISTI # HGT1S10N120BNS | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) TO-263AB Rail - Bulk (Alt: HGT1S10N120BNS) RoHS: Compliant Min Qty: 92 Container: Bulk | Americas - 0 |
|
| HGT1S10N120BNS DISTI # HGT1S10N120BNS | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) TO-263AB Rail - Rail/Tube (Alt: HGT1S10N120BNS) RoHS: Compliant Min Qty: 800 Container: Tube | Americas - 0 |
|
| HGTP10N120BNFS DISTI # HGTP10N120BNFS | ON Semiconductor | - Bulk (Alt: HGTP10N120BNFS) Min Qty: 1 Container: Bulk | Americas - 0 | |
| HGT1S10N120BNST DISTI # HGT1S10N120BNST | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R (Alt: HGT1S10N120BNST) RoHS: Compliant Min Qty: 800 Container: Tape and Reel | Europe - 0 |
|
| HGT1S10N120BNST DISTI # HGT1S10N120BNST | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: HGT1S10N120BNST) RoHS: Compliant Min Qty: 800 Container: Reel | Americas - 0 |
|
| HGTP10N120BN DISTI # 98B1940 | ON Semiconductor | TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-220AB RoHS Compliant: Yes | 0 |
|
| HGT1S10N120BNST DISTI # 29H0101 | ON Semiconductor | IGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes | 0 |
|
| HGT1S10N120BNST DISTI # 31Y1824 | ON Semiconductor | IGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes | 496 |
|
| HGT1S10N120BNS DISTI # 98B1956 | ON Semiconductor | TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-263AB RoHS Compliant: Yes | 0 |
|
| HGTG10N120BND. DISTI # 16AC0004 | Fairchild Semiconductor Corporation | DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes | 0 |
|
| HGTG10N120BND DISTI # 98B1928 | ON Semiconductor | SINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes | 0 |
|
| HGTG10N120BND | ON Semiconductor | HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247 RoHS: Compliant | 50Tube |
|
| HGT1S10N120BNST DISTI # 512-HGT1S10N120BNST | ON Semiconductor | IGBT Transistors N-Channel IGBT NPT Series 1200V RoHS: Compliant | 497 |
|
| HGTG10N120BND DISTI # 512-HGTG10N120BND | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Compliant | 642 |
|
| HGTP10N120BN DISTI # 512-HGTP10N120BN | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Compliant | 0 | |
| HGT1S10N120BNS DISTI # 512-HGT1S10N120BNS | ON Semiconductor | IGBT Transistors 35A 1200V NPT N-Ch RoHS: Compliant | 0 | |
| HGTG10N120BND_Q DISTI # 512-HGTG10N120BND_Q | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Not compliant | 0 | |
| HGT1S10N120BNS | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant | 493 |
|
| HGT1S10N120BNST DISTI # 8076660P | ON Semiconductor | IGBTFAIRCHILDHGT1S10N120BNST, RL | 1410 |
|
| HGT1S10N120BNST DISTI # 8076660 | ON Semiconductor | IGBTFAIRCHILDHGT1S10N120BNST, PK | 18 |
|
| HGTG10N120BN | Harris Semiconductor | 45 | ||
| G10N120BN | Harris Semiconductor | 20 | ||
| HGTG10N120BND | Harris Semiconductor | 20 | ||
| HGTG10N120BND | Harris Semiconductor | 23 | ||
| HGT1S10N120BNST DISTI # HGT1S10N120BNST | ON Semiconductor | Transistor: IGBT,1.2kV,17A,298W,D2PAK | 1049 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Transistor: IGBT,1.2kV,17A,298W,TO247-3 | 227 |
|
| MGTP10N120BN | Fairchild Semiconductor Corporation | RoHS: Compliant | 5 | |
| HGTG10N120BND | Fairchild Semiconductor Corporation | RoHS: Compliant | 1130 | |
| HGT1S10N120BNST DISTI # 2454176 | ON Semiconductor | IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3 RoHS: Compliant | 496 |
|
| HGT1S10N120BNST DISTI # 2454176RL | ON Semiconductor | IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3 RoHS: Compliant | 0 |
|
| HGT1S10N120BNST DISTI # 2454176 | ON Semiconductor | IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3 | 697 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: 10N10/CJU10N10 OMO.#: OMO-10N10-CJU10N10-1190 |
Nuevo y original |
|
Mfr.#: 10N100 OMO.#: OMO-10N100-1190 |
Nuevo y original |
|
Mfr.#: 10N10AT OMO.#: OMO-10N10AT-1190 |
Nuevo y original |
|
Mfr.#: 10N10E OMO.#: OMO-10N10E-1190 |
Nuevo y original |
|
Mfr.#: 10N10EL OMO.#: OMO-10N10EL-1190 |
Nuevo y original |
|
Mfr.#: 10N12 OMO.#: OMO-10N12-1190 |
Nuevo y original |
|
Mfr.#: 10N120BN OMO.#: OMO-10N120BN-1190 |
Nuevo y original |
|
Mfr.#: 10N120BNS OMO.#: OMO-10N120BNS-1190 |
Nuevo y original |
|
Mfr.#: 10N15 OMO.#: OMO-10N15-1190 |
Nuevo y original |
|
Mfr.#: 10N15U6 OMO.#: OMO-10N15U6-1190 |
Nuevo y original |