IXFX80N50P

IXFX80N50P
Mfr. #:
IXFX80N50P
Fabricante:
Littelfuse
Descripción:
MOSFET 500V 80A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFX80N50P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFX80N50P DatasheetIXFX80N50P Datasheet (P4-P5)
ECAD Model:
Más información:
IXFX80N50P más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
80 A
Rds On - Resistencia de la fuente de drenaje:
65 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1040 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Altura:
21.34 mm
Longitud:
16.13 mm
Serie:
IXFX80N50
Tipo de transistor:
1 N-Channel
Ancho:
5.21 mm
Marca:
IXYS
Transconductancia directa - Mín .:
70 S
Otoño:
16 ns
Tipo de producto:
MOSFET
Hora de levantarse:
27 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
70 ns
Tiempo típico de retardo de encendido:
25 ns
Unidad de peso:
0.257500 oz
Tags
IXFX80, IXFX8, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 500 V 65 mOhm Enhancement Mode Power MOSFET
***ical
Trans MOSFET N-CH 500V 80A 3-Pin(3+Tab) PLUS 247
***i-Key
MOSFET N-CH 500V 80A PLUS247-3
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFX80N50P
DISTI # 28993930
IXYS CorporationTrans MOSFET N-CH 500V 80A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant
1110
  • 30:$16.5733
IXFX80N50P
DISTI # IXFX80N50P-ND
IXYS CorporationMOSFET N-CH 500V 80A PLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$15.4457
IXFX80N50PIXYS CorporationN-Channel 500 V 65 mOhm Enhancement Mode Power MOSFET
RoHS: Compliant
1850Tube
  • 1:$21.7600
  • 5:$18.2300
  • 10:$16.8900
  • 25:$15.2700
  • 50:$14.1500
IXFX80N50P
DISTI # 747-IXFX80N50P
IXYS CorporationMOSFET 500V 80A
RoHS: Compliant
104
  • 1:$19.2000
  • 10:$17.4600
  • 25:$16.1400
  • 50:$14.8500
  • 100:$14.4900
  • 250:$13.2800
  • 500:$12.0500
IXFX80N50P
DISTI # XSFP00000002812
IXYS Corporation 
RoHS: Compliant
1245
  • 30:$29.0100
  • 1245:$27.2000
Imagen Parte # Descripción
LMV358IDR

Mfr.#: LMV358IDR

OMO.#: OMO-LMV358IDR

Operational Amplifiers - Op Amps Dual Lw V R/R Op Amp
NJW21193G

Mfr.#: NJW21193G

OMO.#: OMO-NJW21193G

Bipolar Transistors - BJT 200W PNP
NJW21194G

Mfr.#: NJW21194G

OMO.#: OMO-NJW21194G

Bipolar Transistors - BJT 200W NPN
BAV70LT1G

Mfr.#: BAV70LT1G

OMO.#: OMO-BAV70LT1G

Diodes - General Purpose, Power, Switching 70V 200mA Dual Common Cathode
LS4148-GS18

Mfr.#: LS4148-GS18

OMO.#: OMO-LS4148-GS18

Diodes - General Purpose, Power, Switching 100V Io/150mA 2.0 Amp IFSM
LM4040C25IDBZR

Mfr.#: LM4040C25IDBZR

OMO.#: OMO-LM4040C25IDBZR

Voltage References 2.5-V Precision Mcrpwr Shunt .5% acc
MC79L15ACPRPG

Mfr.#: MC79L15ACPRPG

OMO.#: OMO-MC79L15ACPRPG

Linear Voltage Regulators 15V 100mA Negative
C3216X7R1E475K160AE

Mfr.#: C3216X7R1E475K160AE

OMO.#: OMO-C3216X7R1E475K160AE

Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 1206 25V 4.7uF X7R 10% T: 1.6mm
LS4148-GS18

Mfr.#: LS4148-GS18

OMO.#: OMO-LS4148-GS18-VISHAY

Diodes - General Purpose, Power, Switching 100V Io/150mA 2.0 Amp IFSM
NE8FBH

Mfr.#: NE8FBH

OMO.#: OMO-NE8FBH-402

Modular Connectors / Ethernet Connectors HORIZON PCB RECEPT NICKEL RING
Disponibilidad
Valores:
104
En orden:
2087
Ingrese la cantidad:
El precio actual de IXFX80N50P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
19,20 US$
19,20 US$
10
17,46 US$
174,60 US$
25
14,04 US$
351,00 US$
50
13,66 US$
683,00 US$
100
13,47 US$
1 347,00 US$
250
13,28 US$
3 320,00 US$
500
12,05 US$
6 025,00 US$
1000
11,01 US$
11 010,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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